Publicaciones

• Communication dans un congrès

Recent french results in molecular-scale electronics

D. Vuillaume

French-Russian Conference on Nanosciences and Nanotechnology, 2004, Moscou, Russia. ⟨hal-00140756⟩

• Article dans une revue

Electrical and morphological properties of PP and PET conductive polymer fibers

B. Kim, V. Koncar, E. Devaux, C. Dufour, P. Viallier

Synthetic Metals, 2004, 146, pp.167-174. ⟨hal-00140736⟩

• Communication dans un congrès

Systems conception and adaptative calibration technique for S-parameters measurement at 35 GHz

Kamel Haddadi, M. Maazi, D. Glay, T. Lasri

2004, pp.Session 4A. ⟨hal-00142280⟩

• Communication dans un congrès

Structural and optical characterization of InSb-doped Si02 thin films

B. Capoen, V.L. Quang, S. Turrell, Jean-Pierre Vilcot, F. Beclin, Y. Jestin, M. Bouazaoui

5th Symposium on SiO2, Advanced Dielectrics and Related Devices, 2004, Chamonix, France. ⟨hal-00141206⟩

• Communication dans un congrès

Low frequency noise and transport mechanisms in AlGaN/GaN HEMT devices

Jean-Guy Tartarin, Geoffroy Soubercaze-Pun, Abdelali Rennane, Laurent Bary, Robert Plana, Jean-Claude de Jaeger, Marie Germain, S. Delage, Jacques Graffeuil

European Microwave Week, 2004, Amsterdam, Netherlands. ⟨hal-00141963⟩

• Article dans une revue

AlGaN/GaN HEMTs on Si with power density performance of 1.9 W/mm at 10 GHz

A. Minko, Virginie Hoel, E. Morvan, B. Grimbert, A. Soltani, E. Delos, D. Ducatteau, Christophe Gaquière, D. Theron, Jean-Claude de Jaeger, H. Lahreche, L. Wedzikowski, R. Langer, P. Bove

IEEE Electron Device Letters, 2004, 25, pp.453-455. ⟨hal-00141952⟩

• Communication dans un congrès

Amélioration des performances des HEMTs AlGaN/GaN sur substrat Si

A. Minko, Virginie Hoel, Christophe Gaquière, D. Theron, Jean-Claude de Jaeger, Y. Cordier, F. Semond, F. Natali, J. Massies, H. Lareche, L. Wedzikowski, R. Langer, P. Bove

GDR Grand Gap, 2004, Fréjus, France. ⟨hal-00141966⟩

• Article dans une revue

Two-photon absorption in InP substrates in the 1.55 µm range

D. Vignaud, Jean-Francois Lampin, F. Mollot

Applied Physics Letters, 2004, 85, pp.239. ⟨hal-00018568⟩

• Article dans une revue

Schottky-barrier source/drain MOSFETs on ultra-thin silicon-on-insulator body with a tungsten metallic midgap gate

G. Larrieu, Emmanuel Dubois

This letter presents a simple low-temperature process to fabricate Schottky-barrier (SB) MOSFETs that integrates a midgap metallic gate (tungsten). The device architecture is based on a thin (10 nm) and lowly doped silicon-on-insulator film that provides a threshold voltage of -0.3 V independent on...

IEEE Electron Device Letters, 2004, 25, pp.801-803. ⟨10.1109/LED.2004.838053⟩. ⟨hal-00140981⟩

• Communication dans un congrès

Modélisation de la synthèse des poudres de taille nanométrique Si/C/N par pyrolyse laser

Mohamed Amara, M. El Ganaoui, D. Hourlier

Congrès Français de Thermique, SFT 2004 - Transferts en milieux hétérogènes, 2004, Giens, France. ⟨hal-00248022⟩