Publicaciones
Affichage de 14121 à 14130 sur 16260
Advanced and nanometric MOSFET architecture, multiple gate devices and Pi gates
J. Penaud, F. Fruleux, Emmanuel Dubois, G. Larrieu
MIGAS International Summer School on Advanced Microelectronics, MIGAS'04, 2004, Autrans, France. ⟨hal-00140995⟩
Contribution à l'introduction de concepts mécaniques dans les micro et les nano systèmes
L. Buchaillot
2004. ⟨hal-00141025⟩
Electrostatic actuated microgripper using an amplification mechanism
O. Millet, P. Bernardoni, S. Regnier, P. Bidaud, E. Tsitsiris, D. Collard, L. Buchaillot
Sensors and Actuators A: Physical , 2004, 114, pp.371-378. ⟨hal-00141006⟩
Influence de la topologie sur les émissions de mode commun d'un chargeur de batteries
C. Semet, N. Idir
Actes du 12ème Colloque International et Exposition sur la Compatibilité Electromagnétique, CEM'04, 2004, Toulouse, France. ⟨hal-00142322⟩
Effect of objects into cavities on the field distribution : experimental analysis
S. Baranowski, L. Kone, B. Demoulin
2004, pp.739-743. ⟨hal-00142336⟩
Millimeter ultra wide band positioning system
Michael Bocquet, Christophe Loyez, A. Benlarbi-Delai
2004, pp.265-268. ⟨hal-00142284⟩
Performances of AlGaN/GaN HEMTs in planar technology
M. Werquin, N. Vellas, Y. Guhel, D. Ducatteau, B. Boudart, J.C. Pesant, Z. Bougrioua, Marie Germain, Jean-Claude de Jaeger, Christophe Gaquière
2004, pp.303-306. ⟨hal-00142305⟩
Fabrication and creep behavior of SiCN(O) nanocomposites
Mohamed Amara, R. Dez, Sylvie Foucaud, D. Bahloul-Hourlier, P. Goursat, Nathalie Herlin-Boime
4th International Symposium on Nitrides, 2004, Belgium. pp.281-285. ⟨hal-00248025⟩
LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide. Application to HEMT's devices
Marie-Antoinette Di Forte-Poisson, M. Magis, Maurice Tordjman, Raphaël Aubry, Nicolas Sarazin, M. Peschang, Erwan Morvan, Sylvain Laurent Delage, J. Di Persio, Raymond Quéré, B. Grimbert, Virginie Hoel, E. Delos, Damien Ducatteau, Christophe Gaquière
The Twelfth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XII), May 2004, Lahina, United States. pp.107-112, ⟨10.1557/PROC-798-Y10.26⟩. ⟨hal-00162796⟩