Publicaciones

• COMM

A 2D microfabricated nanoelectrospray source

S. Arscott, S. Le Gac, C. Druon, P. Tabourier, C. Rolando

Journées Nationales du Réseau Micro et Nano Technologies, 2003, Lille, France. ⟨hal-00146380⟩

• COMM

Conception et fabrication de fils optiques en filière InP

Arnaud Beaurain, Samuel Dupont, Jean-Pierre Vilcot, Didier Decoster, L. Dobrzynski, Bahram Djafari-Rouhani, Abdellatif Akjouj, Jerome O. Vasseur, Mohamed Bouazaoui

Actes du Congrès général de la Société Française de Physique, 2003, Lyon, France. ⟨hal-00146539⟩

• COMM

Electron-beam-induced reactivation of Si dopants in hydrogenated 2D AlGaAs heterostructures : a possible new route of fabricating III-V nanostructures

L. Kurowski, D. Bernard-Loridant, E. Constant, Didier Decoster

7th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, 2003, Lille, France. ⟨hal-00146558⟩

• COMM

Controlled charge injection in semiconductor nanoparticles

H. Diesinger, Thierry Melin, D. Deresmes, D. Stiévenard

12th International Conference on Scanning Tunneling Microscopy, Spectroscopy and Related Techniques, STM'03, 2003, Eindhoven, Netherlands. ⟨hal-00146616⟩

• OTHER

Etude et perspective de transistors à hétérostructure AlInAs/GaInAs de longueur de grille inférieure à 100 nm et conception de circuits intégrés en bande G

T. Parenty

2003. ⟨hal-00162732⟩

• ART

Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111)

F. Natali, F. Semond, J. Massies, D. Byrne, S. Laugt, O. Tottereau, P. Vennegues, El Hadj Dogheche, E. Dumont

Applied Physics Letters, 2003, 82, pp.1386-1388. ⟨hal-00162730⟩

• ART

Conduction band offset in the AlxGayIn1–x–yP/Ga0.52In0.48P system as studied by luminescence spectroscopy

D. Vignaud, F. Mollot

The conducton band offset (CBO) in the AlxGayIn1-x-yP/Ga0.52In0.4 8P heterostructures was measured and analyzed. The methods employed for the measurement included photoluminescence and photoluminescence excitation spectroscopy. The parameters involved in the model solid theory were masured...

Journal of Applied Physics, 2003, 93 (1), pp.384. ⟨10.1063/1.1528309⟩. ⟨hal-00018496⟩

• ART

Reactive ion beam etching of PZT thin films

Caroline Soyer, Eric Cattan, Denis Remiens

Lead titano-zirconate ferroelectric thin films have developed a great interest for their applications in memory devices, and more recently in microelectromechanical systems because of their interesting piezoelectric properties. The patterning has become an essential element for PZT integration in...

Ferroelectrics, 2003, 288 (1), pp.253-263. ⟨10.1080/00150190390211530⟩. ⟨hal-00146478⟩

• COMM

Modeling of failure mechanisms for optimized MEMS CAD : design, fabrication and characterization of in situ test benches

Olivier Millet, Vincent Agache, Bernard Legrand, Dominique Collard, Lionel Buchaillot

This work considers the reliability of surface microfabricated structures and particularly the dynamic response of structural layers during operations, in order to develop a statistical modelling of failure mechanisms for micro-actuator. In situ test benches have been designed and fabricated...

12th International Conference on Solid-State Sensors, Jun 2003, Boston, United States. pp.1578-1581, ⟨10.1109/SENSOR.2003.1217081⟩. ⟨hal-00146440⟩

• ART

Nouveaux matériaux actifs nanostructurés à magnétostriction géante et nouveaux modes de commande de microactionneurs, New nanostructured active materials with giant magnetostriction and new driving modes of microactuators

Nicolas Tiercelin, Vladimir Preobrazhensky, Philippe Pernod, Steve Masson, Jamal Ben Youssef, Henri Le Gall

Cet article traite du développement de films minces magnétostrictifs dans lesquels une instabilité magnétique de type Transition de Réorientation de Spin (TRS) peut être induite artificiellement grâce à la nanostructuration du film actif. La TRS est utilisée pour l'amplification géante de la..., This paper deals with the development of magnetostrictive thin films in which a magnetic instability of the Spin Reorientation Transition (SRT) type could be artificially induced by taking advantage of the nanostructured character of the films. This instability is used in order to achieve a great...

Mechanics & Industry, 2003, 4 (3), pp.169-174. ⟨10.1016/S1296-2139(03)00044-7⟩. ⟨hal-00146127⟩