Publicaciones
Affichage de 15511 à 15520 sur 16232
3D self-assembling and actuation of electrostatic micro-mirrors
E. Quevy, L. Buchaillot, P. Bigotte, D. Collard
2000, pp.412-415. ⟨hal-00158536⟩
Design optimisation of ultra-short gate HEMTs using Monte Carlo simulation
J. Mateos-Lopez, T. Gonzalez, D. Pardo, Virginie Hoel, S. Bollaert, A. Cappy
2000, pp.624-627. ⟨hal-00157877⟩
FECTED oscillator optronic application feasibility
F. Driouch, M.R. Friscourt, Christophe Dalle
Solid-State Electronics, 2000, 44, pp.1455-1461. ⟨hal-00158131⟩
Monolithic microwave integrated GaAs electromagnetically-coupled antennas
M. Grzeskowiak, J. Vindevoghel
2000, pp.170-173. ⟨hal-00158144⟩
High power GaN MESFET's on sapphire substrate
Christophe Gaquière, S. Trassaert, B. Boudart, D. Theron, Y. Crosnier
IEEE Microwave and Guided Wave Letters, 2000, 10, pp.19-20. ⟨hal-00158979⟩
Propriétés et applications des nanocristaux de silicium et de germanium
Christophe Delerue, Yann-Michel Niquet, Guy Allan, Michel Lannoo
7èmes Journées de la Matière Condensée, 2000, Poitiers, France. ⟨hal-00158967⟩
Frequency difference generation in the terahertz region using LTG-GaAs photodetector
Emilien Peytavit, Gaël Mouret, Jean-Francois Lampin, Pascal Masselin, P. Mounaix, F. Mollot, D. Lippens
8th International Conference on Terahertz Electronics, Sep 2000, Darmstadt, Germany. pp.45-48. ⟨hal-00158220⟩
Conduction band offset at the (AIxGa1-x)yIn1-y/Ga0.52In0.48P interface : a photoluminescence study
D. Vignaud, F. Mollot
Proceedings of the 11th International Conference on Molecular Beam Epitaxy, MBE XI, 2000, Beijing, China. ⟨hal-00158221⟩
Interplay between segregation, roughness and local strains in the growth of Ga0.75In0.25P alloy
X. Wallart, C. Priester, D. Deresmes, F. Mollot
Applied Physics Letters, 2000, 77, pp.253-255. ⟨hal-00158232⟩
Strain mapping of V-groove InGaAs/GaAs strained quantum wires using cross sectional Atomic Force Microscopy
F. Lelarge, C. Priester, C. Constantin, A. Rudra, K. Leifer, E. Kapon
Applied Surface Science, 2000, 166, pp.290-294. ⟨hal-00158661⟩