Publicaciones
Affichage de 15551 à 15560 sur 16175
An accurate and efficient high frequency noise simulation technique for deep submicron MOSFETs
J.S. Goo, C.H. Choi, Francois Danneville, E. Morifuji, H.S. Momose, Z. Yu, H. Iwai, T.H. Lee, R.W. Dutton
IEEE Transactions on Electron Devices, 2000, 47, pp.2410-2419. ⟨hal-00157860⟩
An ultra high switching frequency step-down DC-DC converter based on gallium arsenide devices
Mamadou Gaye, Sami Ajram, Paul Maynadier, Georges Salmer
_, 2000, _, France. 4 pp. ⟨hal-00157875⟩
Acoustic scattering in time domain using the boundary element method
A. Lavie, Bertrand Dubus, A. El Ghaouty
2000, pp.129-133. ⟨hal-00157820⟩
Numerical modeling of magnetostrictive materials using the finite element code ATILA
J. Coutte, E. Lenglet, Bertrand Dubus
US Navy Workshop on Acoustic Transduction Materials and Devices, 2000, State College, United States. ⟨hal-00157834⟩
The indium content in metamorphic InAlAs/InGaAs HEMTs on GaAs substrate : a new structure parameter
S. Bollaert, Y. Cordier, M. Zaknoune, H. Happy, Virginie Hoel, Sylvie Lepilliet, D. Theron, A. Cappy
Solid-State Electronics, 2000, 44, pp.1021-1027. ⟨hal-00157879⟩
Microélectronique et microtechnologies des composants III-V. Applications aux longueurs d'onde millimétrique et submillimétrique
P. Mounaix
2000. ⟨hal-00158226⟩
Dependence of the carrier lifetime on acceptor concentration in GaAs grown at low-temperature under different growth and annealing conditions
M. Stellmacher, J. Nagle, Jean-Francois Lampin, P. Santoro, J. Vaneecloo, Antigoni Alexandrou
Journal of Applied Physics, 2000, 88, pp.6026-6031. ⟨hal-00158228⟩
On 2D/3D numerical oxidation modeling : calibration and investigation of silicon crystal orientation effect on stresses in shallow trench isolations
T. Hoffmann, K.F. Dombrowski, V. Senez
2000, pp.59-62. ⟨hal-00158513⟩
Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy : comparison with the GaInAs/GaAs system
X. Wallart, D. Deresmes, F. Mollot
2000, pp.231-234. ⟨hal-00158442⟩
Determination of the electrical properties of thermally grown ultrathin nitride films
N. Pic, A. Glachant, S. Nitsche, J.Y. Hoarau, D. Goguenheim, D. Vuillaume, A. Sibai, C. Chaneliere
Microelectronics Reliability, 2000, 40, pp.589-592. ⟨hal-00158478⟩