Publicaciones

• Communication dans un congrès

Ultrasonic harmonic imaging by means of supercritical parametric

Leonid Krutyansky, Philippe Pernod, Andrey Brysev, Vladimir Preobrazhensky

Ultrasonics International, 2001, Delft, Netherlands. ⟨hal-00152129⟩

• Article dans une revue

Silicon nitride as an effective protection against oxidation of a TiNi thin film in high temperature oxidizing air environment at atmospheric pressure

I. Roch, L. Buchaillot, X. Wallart, D. Collard

Journal of Vacuum Science and Technology, 2001, B19, pp.305-307. ⟨hal-00152461⟩

• Thèse

Contribution à l’optimisation du contrôle santé intégré par ondes de Lamb : application à la surveillance de structures aéronautiques, Optimization of Lamb wave based health monitoring systems for aeronautical structure inspection

Sébastien Grondel

Ce travail est consacré à l'étude et à la mise au point d'un système de surveillance embarqué destiné au contrôle santé de structures aéronautiques. Le système choisi pour réaliser ce « contrôle santé intégré » repose, d'une part, sur l'excitation et la réception d'ondes de..., This work is devoted to the study and the development of an health monitoring system assigned to aircraft applications. The chosen health monitoring system is based first on the excitation and reception of Lamb waves along the structure and secondly on a continuous monitoring with the same...

Electronique. Université de Valenciennes et du Hainaut-Cambrésis, 2000. Français. ⟨NNT : 2000VALE0030⟩. ⟨hal-00159072⟩

• Article dans une revue

Theoretical simulation of free carrier mobility collapse in GaN in terms of dislocation walls

J-L Farvacque, Z. Bougrioua, I Moerman

Journal of Physics: Condensed Matter, 2000, 12 (49), pp.10213-10221. ⟨10.1088/0953-8984/12/49/321⟩. ⟨hal-02906495⟩

• Article dans une revue

Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry

A Stafford, S.J.C Irvine, Z. Bougrioua, K. Jacobs, I Moerman, E.J Thrush, L Considine

Journal of Crystal Growth, 2000, 221 (1-4), pp.142-148. ⟨10.1016/S0022-0248(00)00674-6⟩. ⟨hal-02906485⟩

• Article dans une revue

Streaming and removal forces due to second-order sound field during megasonic cleaning of silicon wafers

Jerome O. Vasseur, P. Deymier, J. Vasseur, A. Khelif, Bahram Djafari-Rouhani, L. Dobrzynski, S. Raghavan

Journal of Applied Physics, 2000, 88 (11), pp.6821-6835. ⟨10.1063/1.1323521⟩. ⟨hal-03301993⟩

• Article dans une revue

Transferred-substrate InP-based heterostructure barrier varactor diodes on quartz

D. Lippens, O. Vanbésien, P. Mounaix, X. Melique, T. David, S. Arscott

IEEE Microwave and Guided Wave Letters, 2000, 10 (11), pp.472-474. ⟨10.1109/75.888836⟩. ⟨hal-02348025⟩

• Article dans une revue

Enhancement mode metamorphic In0.33Al0.67As/In0.34Ga0.66As HEMT on GaAs substrate with high breakdown voltage

Mustafa Boudrissa, Elisabet Delos, Yvon Cordier, Didier Theron, Jean-Claude de Jaeger

This paper presents original and experimental results provided by E-mode Al/sub 0.67/In/sub 0.33/As/Ga/sub 0.66/In/sub 0.34/As metamorphic HEMT. The devices exhibit good dc and rf performances. The 0.4 μm gate length devices have saturation current density of 355 mA/mm at +0.6 V gate-to-source...

IEEE Electron Device Letters, 2000, 21 (11), pp.512-514. ⟨10.1109/55.877193⟩. ⟨hal-00158983⟩

• Communication dans un congrès

Microtechnologies for the monolithic fabrication of mm and submm non linear devices

P. Mounaix, S. Arscott, T. David, Florence Podevin, X. Melique, D. Lippens

30th European Microwave Conference, 2000, Oct 2000, Paris, France. pp.1-4, ⟨10.1109/EUMA.2000.338617⟩. ⟨hal-02348043⟩

• Article dans une revue

The preparation of flat H–Si(111) surfaces in 40% NH4F revisited

Philippe Allongue, Catherine Henry de Villeneuve, Sylvie Morin, Rabah Boukherroub, Danial D.M. Wayner

The reasons why ideally flat H–Si(111) surface can be prepared by NH4F etching are investigated from correlation between AFM observations and experimental conditions used for etching. It is shown that pitting may be completely suppressed if a one side polished wafer is immersed in an oxygen free...

Electrochimica Acta, 2000, 45 (28), pp.4591-4598. ⟨10.1016/S0013-4686(00)00610-1⟩. ⟨hal-04166347⟩