Publicaciones

• Proceedings/Recueil des communications

Modeling and Optimisation of Optoelectronics devices

Joseph Harari, Vincent Magnin

The aim of this paper is to present modeling and optimisation methods to be applied in optoelectronics. We do not consider the case of laser. At first, we present the main modeling methods that we used to simulate the device optical and electrical behaviour. Secondly we tackle with the interesting...

29th European Solid-State Device Research Conference (ESSDERC'99), IEEE, 1999, 2-86332-245-1. ⟨hal-04449542⟩

• Communication dans un congrès

Nanometer scale Lithography on Silicon, Titanium and PMMA resist

Emmanuel Dubois, Jean-Luc Bubendorff

E-MRS Materials and Processes for Submicron Technologies, vol. 89, p. 1085-1089, Editors J.M. Martinez- Duart, R. Madar, R.A. Levy, 1999, 1999, Strasbourg, France. ⟨hal-04249216⟩

• Communication dans un congrès

Very high selective wet etching application to the uniformity improvement of linear power PHEMT

X. Hue, B. Boudart, Bertrand Bonte, Y. Crosnier

23th Workshop On Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), 1999, Chantilly, France. ⟨hal-01654299⟩

• Communication dans un congrès

Etude du contact ohmique Ti/Al/Ni/Au sur n-GaN pour applications hyperfréquences et haute température de TECs de puissance

B. Boudart, S. Trassaert, Xavier Wallart, J.C. Pesant, L Fugère, Didier Theron, Y. Crosnier

7es Journées Nationales Microélectronique et Optoélectronique (JNMO), 1999, Egat, France. ⟨hal-01654466⟩

• Communication dans un congrès

High linearity of double channel GaAs PHEMT using a very high selective wet etching

X. Hue, B Boudart, Bertrand Bonte, Y. Crosnier

GAAS 99, 1999, Munich, Germany. ⟨hal-01649420⟩

• Article dans une revue

Noise analysis in devices under nonlinear operation

A. Cappy, Francois Danneville, Gilles Dambrine, Beaudouin Tamen

Solid-State Electronics, 1999, 43 (1), pp.21-26. ⟨10.1016/S0038-1101(98)00261-5⟩. ⟨hal-03612812⟩

• Article dans une revue

Electronic States and Luminescence in Porous Silicon Quantum Dots: The Role of Oxygen

M. V Wolkin, Jacob Jorne, P. M Fauchet, Guy Allan, Christophe Delerue

Depending on the size, the photoluminescence (PL) of silicon quantum dots present in porous silicon can be tuned from the near infrared to the ultraviolet when the surface is passivated with Si-H bonds. After exposure to oxygen, the PL shifts to the red by as much as 1 eV. This shift and the...

Physical Review Letters, 1999, 82 (1), pp.197-200. ⟨10.1103/PhysRevLett.82.197⟩. ⟨hal-03314703⟩

• Article dans une revue

High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits

Gilles Dambrine, J.-P. Raskin, Francois Danneville, D. Vanhoenackel Janvier, J.-P. Colinge, A. Cappy

IEEE Transactions on Electron Devices, 1999, 46 (8), pp.1733-1741. ⟨10.1109/16.777164⟩. ⟨hal-03612809⟩

• Article dans une revue

Nanometer scale lithography on silicon, titanium and PMMA resist using scanning probe microscopy

Emmanuel Dubois, Jean-Luc Bubbendorff

Scanning tunneling microscopy (STM) and atomic force microscopy (AFM) nanolithography techniques based on local oxidation of silicon/titanium and electron beam exposure of PMMA are described. It is shown that a 10 nm resolution can routinely be achieved using tapping-mode AFM-based anodization of...

Solid-State Electronics, 1999, 43 (6), pp.1085-1089. ⟨10.1016/S0038-1101(99)00029-5⟩. ⟨hal-04246744⟩

• Article dans une revue

Transferred InP-based HBVs on glass substrate

S. Arscott, P. Mounaix, D. Lippens

Electronics Letters, 1999, 35 (17), pp.1493. ⟨10.1049/el:19990984⟩. ⟨hal-02348069⟩