Publicaciones

• Communication dans un congrès

Finite element modeling of damping using piezoelectric materials

Anne-Christine Hladky, C. Granger

2000, pp.64-65. ⟨hal-00157823⟩

• Communication dans un congrès

GaN MESFETs for power and high temperature applications

B. Boudart, S. Trassaert, Christophe Gaquière, D. Theron, Y. Crosnier, François Huet, M.A. Poisson, I. Daumiller, E. Kohn

NearEst Miniworkshop on Advances in the Wide Bandgap Electronics and Opto-Electronics, 2000, Padova, Italy. ⟨hal-00159032⟩

• Communication dans un congrès

Dry etching for gate recessing on AlGaN/GaN HEMTs

Y. Guhel, B. Boudart, M.A. Poisson, Jean-Claude de Jaeger

10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany. ⟨hal-00159034⟩

• Article dans une revue

Microscopic characterization of defects using scanning tunneling microscopy

D. Stievenard

Materials Science and Engineering: B, 2000, B71, pp.120-127. ⟨hal-00158667⟩

• Communication dans un congrès

Deep traps related effects in GaN MESFET's grown on saphire substrate

A. Chini, G. Meneghesso, E. Zanoni, M. Manfredi, M. Pavesi, B. Boudart, Christophe Gaquière

10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany. ⟨hal-00159037⟩

• Article dans une revue

Resonant and localized electromagnetic modes in finite superlattices

M. Lahlaouti, Abdellatif Akjouj, B. Djafari-Rouhani, Leonard Dobrzynski

Physical Review B, 2000, 61 (3), pp.2059-2064. ⟨10.1103/PhysRevB.61.2059⟩. ⟨hal-04070077⟩

• Article dans une revue

Vector and parallel implementations for the FDTD analysis of millimeter wave planar antennas

H. Hoteit, Ronan Sauleau, B. Philippe, Philippe Coquet, J.P. Daniel

International Journal of High Speed Computing, 1999, 10 (2), 209-234 - 25 p. ⟨hal-00557655⟩

• Communication dans un congrès

Nano-lithography by SPM-induced oxidation: role of space charge in the kinetics of oxide growth

Emmanuel Dubois, Jean-Luc Bubendorff

Proc. of the International Semiconductor Device Research Symposium ISDRS’99, Dec 1999, Charlottesville, United States. ⟨hal-04249195⟩

• Article dans une revue

Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE

J.-L Farvacque, Z. Bougrioua, I Moerman, G. van Tendeloo, O. Lebedev

Physica B: Condensed Matter, 1999, 273-274, pp.140-143. ⟨10.1016/S0921-4526(99)00431-7⟩. ⟨hal-02906481⟩

• Article dans une revue

Uniformity improvement of linear power pHEMTs using a very high selective wet etching

X. Hue, B. Boudart, B. Bonte, Y. Crosnier

The realization and characterization of Al0.22Ga0.78As/In0.22Ga0.78As/GaAs multifinger linear power pHEMTs, using a citric acid selective wet etching for the gate recessing, are reported. A very high uniformity for both the drain current and pinch-off voltage values have been obtained. The...

Microwave and Optical Technology Letters, 1999, 23 (3), pp.192 - 194. ⟨10.1002/(SICI)1098-2760(19991105)23:33.0.CO;2-5⟩. ⟨hal-01646851⟩