Publicaciones
Affichage de 15941 à 15950 sur 16064
Composants millimétriques à deux électrodes
M.R. Friscourt, Christophe Dalle, P.A. Rolland
1989. ⟨hal-00005289⟩
Interface response theory of N-layered discrete semiconductor superlattices
M Rahmani, P Masri, Leonard Dobrzynski
Journal of Physics C: Solid State Physics, 1988, 21 (27), pp.4761-4781. ⟨10.1088/0022-3719/21/27/007⟩. ⟨hal-04070520⟩
IMPACT-4, a general two-dimensional multi- layer process simulator
B. Baccus, Dominique Collard, Emmanuel Dubois, Denis Morel
Simulation of Semiconductor Devices and Processes, Ed. G. Baccarani and M. Rudan, Sep 1988, Bologna, Italy. ⟨hal-04249164⟩
Two-dimensional process simulation of bipolar devices using a multi-layer simulator: IMPACT-4’
B. Baccus, Dominique Collard, Emmanuel Dubois, Denis Morel
Proc. of the Bipolar Circuits and Technology Meeting, BCTM, Sep 1988, Minneapolis, United States. ⟨hal-04249168⟩
Electrical performances evaluation of isolation structures by coupled process and device simulation
Emmanuel Dubois, Jean-Louis Coppée, B. Baccus, Dominique Collard
Simulation of Semiconductor Devices and Processes, Ed. G. Baccarani and M. Rudan, Sep 1988, Bologna, Italy. ⟨hal-04249174⟩
Interface response theory of composite systems
Leonard Dobrzynski
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 1988, 200 (2-3), pp.435-443. ⟨10.1016/0039-6028(88)90548-1⟩. ⟨hal-04070071⟩
Interface response theory of phonons in N -layer superlattices
T. Szwacka, A. Noguera, A. Rodriguez, J. Mendialdua, Leonard Dobrzynski
Physical Review B, 1988, 37 (14), pp.8451-8454. ⟨10.1103/PhysRevB.37.8451⟩. ⟨hal-04070510⟩
Interface-response theory of electromagnetism in dielectric superlattices
Leonard Dobrzynski
Physical Review B, 1988, 37 (14), pp.8027-8033. ⟨10.1103/PhysRevB.37.8027⟩. ⟨hal-04070073⟩
Ferromagnetism of composites with two interfaces
Abdellatif Akjouj, B. Sylla, P. Zielinski, Leonard Dobrzynski
Physical Review B, 1988, 37 (10), pp.5670-5676. ⟨10.1103/PhysRevB.37.5670⟩. ⟨hal-04070316⟩
Gate current and 2D electron concentration in HIGFET and SISFET
D. Depreeuw, P. Godts, E. Constant, J. Zimmermann, Francois Danneville
Electronics Letters, 1988, 24 (15), pp.944. ⟨10.1049/el:19880643⟩. ⟨hal-03317737⟩