Publicaciones

Affichage de 7081 à 7090 sur 16056


  • COMM

Tunable one-dimensional piezoelectric phononic crystals

S. Degraeve, C. Granger, Bertrand Dubus, Jerome O. Vasseur, Anne-Christine Hladky, M. Pham Thi

2nd International Conference on Phononic Crystals/Metamaterials, Phonon Transport and Optomechanics, PHONONICS 2013, 2013, Sharm El-Sheikh, Egypt. Paper PHONONICS-2013-0110, 108-109. ⟨hal-00881283⟩

  • COMM

A compact communication component for the 3G mobile networks

M. Ben Ahmed, M. Bouhorma, F. El Ouaai, A. Mamouni, A.A. Boudhir

TELECOM'2013 and 8èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2013, Marrakech, Morocco. papier 325, 1-4. ⟨hal-00804744⟩

  • COMM

High frequency noise characterisation of graphene FET Device

D. Mele, S. Fregonese, Sylvie Lepilliet, E. Pichonat, Gilles Dambrine, H. Happy

RF GFET devices have been processed on SiC wafer using Al2O3 as a gate oxide. These devices have been characterised with DC, S parameter and high frequency noise measurement (NF50). The noise parameters have been extracted in order to evaluate the graphene material for RF applications. This GFET...

61st IEEE MTT-S International Microwave Symposium, IMS 2013, 2013, Seattle, WA, United States. paper TU3C-1, 4 p., ⟨10.1109/MWSYM.2013.6697561⟩. ⟨hal-00944030⟩

  • COMM

Tunable locally resonant band gaps for surface acoustic waves and Lamb waves in a phononic crystal

N. Gasmi, Abdelkrim Talbi, Y. Du, M. Goueygou, Olivier Bou Matar

IEEE International Ultrasonics Symposium, IUS 2013, 2013, Prague, Czech Republic. ⟨hal-00944043⟩

  • COMM

A 285 GHz sub-harmonic injection locked oscillator in 65nm CMOS technology

J. Moron Guerra, A. Siligaris, Jean-Francois Lampin, Francois Danneville, P. Vincent

A 285 GHz Sub Harmonic Injection Locked Oscillator (SHILO) is presented using a standard 65nm CMOS process. The architecture of this oscillator is based on the differential LC tank with push-push but adapted to obtain a third harmonic oscillation. The output power is -19 dBm at 285 GHz for a dc...

61st IEEE MTT-S International Microwave Symposium, IMS 2013, 2013, Seattle, WA, United States. paper WE1F-4, 3 p., ⟨10.1109/MWSYM.2013.6697345⟩. ⟨hal-00944033⟩

  • COMM

Doped semiconductor nanocrystal junctions studied by Kelvin probe and non-contact atomic force microscopy

Lukasz Borowik, Thuat Nguyen-Tran, D. Deresmes, Heinrich Diesinger, Pere Roca I Cabarrocas, Thierry Melin

Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (ND~10^20-10^21 cm-3) hydrogen-passivated silicon nanocrystals (NCs) in the 2-50nm size range, using non-contact atomic force microscopy coupled to Kelvin probe...

Materials Research Society Fall Meeting, MRS Fall 2013, Symposium LL : Advances in Scanning Probe Microscopy, 2013, Boston, MA, United States. ⟨hal-00944018⟩