Publicaciones

• COMM

Polarization engineering of AlGaN/GaN HEMTs for high power applications at 40 GHz

Stéphanie Rennesson, François Lecourt, N. Defrance, M. Chmielowska, S. Chenot, Marie Lesecq, Virginie Hoel, Etienne Okada, Yvon Cordier, Jean-Claude de Jaeger

Joint 5th International Workshop on Silicon Carbide Hetero-Epitaxy and 5th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications, HeteroSiC-WASMPE 2013, 2013, Nice, France. ⟨hal-00987957⟩

• COMM

KPFM sur des transistors FET à base de nano-rubans de silicium fonctionnalisés pour la réalisation de détecteurs

S. Lenfant, K. Smaali, David Guérin, Thierry Melin, D. Vuillaume, L. Ordronneau, A. Carella, C. Celle, J.P. Simonato

16ème Forum des Microscopies à Sondes Locales, 2013, Spa, Belgique. papier OC26, 48-49. ⟨hal-00818716⟩

• ART

Coherent tunnelling across a quantum point contact in the quantum Hall regime

F. Martins, S. Faniel, B. Rosenow, Hermann Sellier, Serge Huant, M. G. Pala, L. Desplanque, X. Wallart, Vincent Bayot, B. Hackens

The unique properties of quantum Hall devices arise from the ideal one-dimensional edge states that form in a two-dimensional electron system at high magnetic field. Tunnelling between edge states across a quantum point contact (QPC) has already revealed rich physics, like fractionally charged...

Scientific Reports, 2013, 3, pp.1416. ⟨10.1038/srep01416⟩. ⟨hal-00932989⟩

• COMM

[Invité] Interactions optomécaniques dans les cavités phoxoniques

Bahram Djafari-Rouhani, M. Oudich, Said El-Jallal, Yan Pennec

14èmes Journées Nano, Micro et Optoélectronique, JNMO 2013, 2013, Evian, France. ⟨hal-00819474⟩

• COMM

Effect of pinch-off current leakage characteristics of AlGaN/GaN/Si HEMTs

H. Mosbahi, M. Gassoumi, H. Mejri, Christophe Gaquière, B. Grimbert, M.A. Zaidi, H. Maaref

European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium L - Group III nitrides, 2013, Strasbourg, France. ⟨hal-00819698⟩

• ART

Defect-controlled hypersound propagation in hybrid superlattices

D. Schneider, F. Liaqat, E.H. El Boudouti, O. El Abouti, W. Tremel, H.J. Butt, Bahram Djafari-Rouhani, G. Fytas

We employ spontaneous Brillouin light scattering spectroscopy and detailed theoretical calculations to reveal and identify elastic excitations inside the band gap of hypersonic hybrid superlattices. Surface and cavity modes, their strength and anticrossing are unambiguously documented and fully...

Physical Review Letters, 2013, 111, pp.164301-1-5. ⟨10.1103/PhysRevLett.111.164301⟩. ⟨hal-00879487⟩

• COMM

Design and realization of HF ultrasonic transducers on bulk-PZT piezoelectric substrate using laser ablation laser and inkjet printing

Marc Duquennoy, O. Rigo, S. Hocquet, Christian Courtois, J. Deboucq, Mohamed Rguiti, Laurent Seronveaux, Mohammadi Ouaftouh, D. Vandormael, Frédéric Jenot, O. Vanoverschelde, Gregory Martic, Véronique Lardot

13th Conference of the European Ceramic Society, ECERS XIII, 2013, Limoges, France. ⟨hal-00878915⟩

• COMM

Energy efficient adaptive video compression scheme for WVSNs

O. Alaoui Fdili, François-Xavier Coudoux, Y. Fakhri, Patrick Corlay, D. Aboutajdine

21st European Signal Processing Conference, EUSIPCO 2013, 2013, Marrakech, Morocco. USB Proceedings, session WE-L9, 6 p. ⟨hal-00877788⟩

• ART

The effects of increasing antenna arrays and spatial correlation on loading algorithm for closed-loop MIMO vehicle-to-infrastructure communications

Imade Fatani, Mohamed Gharbi, François-Xavier Coudoux, Marion Berbineau, Patrick Corlay, Marc G. Gazalet

In this paper, an efficient bit-loading algorithm in the context of SVD-aided MIMO transmission for vehicle-to-infrastructure (V2I) communications is presented. This algorithm, which exploits the intrinsic properties of the eigen-channels resulting from SVD, tries to minimize the error probability...

Lecture Notes in Computer Science, 2013, 7865, pp.107-120. ⟨10.1007/978-3-642-37974-1_9⟩. ⟨hal-00877704⟩

• ART

Modelling of silicon oxynitridation by nitrous oxide using the reaction rate approach

Christophe Krzeminski

Large technological progress in oxynitridation processing leads to the introduction of silicon oxynitride as ultra-thin gate oxide. On the theoretical side, few studies have been dedicated to the process modelling of oxynitridation. Such an objective is a considerable challenge regarding the...

Journal of Applied Physics, 2013, 114, 224501, 9 p. ⟨10.1063/1.4839675⟩. ⟨hal-00917560⟩