Publicaciones

Affichage de 7111 à 7120 sur 16256


  • Communication dans un congrès

[Invited] A phoxonic crystal : photonic and phononic bandgaps in a 1D optomechanical crystal

Jordi Gomis-Bresco, Daniel Navarro-Urrios, Mourad Oudich, Said El-Jallal, Amadeu Griol, Daniel Puerto, Emigdio Chavez, Yan Pennec, Bahram Djafari-Rouhani, Francesc Alzina, Alejandro Martínez, C.M. Sotomayor Torres

Recent years have witnessed the increase of interest in cavity optomechanics, which exploits the confinement and coupling of optical waves and mechanical vibrations at the nanoscale. Amongst the different physical implementations, optomechanical (OM) crystals built on semiconductor slabs would...

16th International Conference on Transparent Optical Networks, ICTON 2014, 2014, Graz, Austria. paper We.D6.4, 4 p., ⟨10.1109/ICTON.2014.6876627⟩. ⟨hal-01056950⟩

  • Communication dans un congrès

A fast and functional technique for the noise figure measurement of differential amplifiers

Yogadissen Andee, Jérôme Prouvée, François Graux, Francois Danneville

This paper presents an original technique to measure the noise figure of differential amplifiers with a four-port network analyzer. The approach is fast and simple as the S-parameters and the output noise powers are measured directly with the analyzer. There is no need of hybrid couplers or baluns...

10th Conference on PhD Research in Microelectronics and Electronics, PRIME 2014, 2014, Grenoble, France. 4 p., ⟨10.1109/PRIME.2014.6872691⟩. ⟨hal-01056957⟩

  • Article dans une revue

RF and broadband noise investigation in high-k/metal gate 28-nm CMOS bulk transistor

Francois Danneville, Laurent Poulain, Yoann Tagro, Sylvie Lepilliet, Benjamin Dormieu, Daniel Gloria, P. Scheer, Gilles Dambrine

In order to pursue Moore's law, material engineering has constituted a real focus during the last decade. In particular, the recent introduction of new Gate stack using High-k dielectrics and Metal Gate (H-k/MG) for CMOS was a key point to downscale the 'Equivalent Oxide Thickness'....

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2014, 27, pp.736-747. ⟨10.1002/jnm.1972⟩. ⟨hal-01058062⟩

  • Article dans une revue

0.2-μm InP/GaAsSb DHBT power performance with 10 mW/μm² and 25% PAE at 94 GHz

Mohammed Zaknoune, Etienne Okada, Estelle Mairiaux, Yannick Roelens, Damien Ducatteau, Peter Frijlink, Marc Rocchi, Hassan Maher

We report a 94-GHz large-signal load-pull characterization of InP/GaAsSb double heterojunction bipolar transistors. The investigated devices have an emitter area of 0.20 × 9.5 μm2. Biased for highest power added efficiency (PAE), an output power of 6.62 mW/μm2 (11 dBm), a power gain of 5.2 dB, and...

IEEE Electron Device Letters, 2014, 35 (3), pp.321-323. ⟨10.1109/LED.2014.2298251⟩. ⟨hal-00955679⟩

  • Communication dans un congrès

Organic synapstor for unconventional computing and biocompatible applications

D. Vuillaume

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium S - Memristormaterials, mechanisms and devices for unconventional computing, 2014, Lille, France. ⟨hal-00957811⟩

  • Communication dans un congrès

Synthesis, characterization, and computer simulation of self-assembled Au nanoparticles with memristive behavior

F. Cleri, S. Carrillo, Christophe Krzeminski, Yannick Viero, S. Lenfant, David Guérin, D. Vuillaume

XXVIII International Winterschool on Electronic Properties of Novel Materials, IWEPNM 2014, 2014, Kirchberg, Austria. ⟨hal-00957805⟩

  • Autre publication scientifique

Advances in Historical Studies [Editor in Chief 4/2]

Raffaele Pisano

2014. ⟨hal-04517910⟩