Publicaciones

• Communication dans un congrès

Dispositifs à base de graphène

H. Happy

Journée Nanoélectronique du club EEA, 2012, Orsay, France. ⟨hal-00797281⟩

• Communication dans un congrès

Tunability of one-dimensional piezoelectric or piezomagnetic phononic crystals

S. Degraeve, C. Granger, Bertrand Dubus, Jerome O. Vasseur, Anne-Christine Hladky, M. Pham-Thi

IEEE International Ultrasonics Symposium, IUS 2012, 2012, Dresden, Germany. ⟨hal-00797275⟩

• Communication dans un congrès

Dielectric Parameters Study of insulation Wire Free of Volatile Organic Compound

S. Ait Amar, D. Roger, G. Velu, M. Ben Fatallah, A. Habas, J.-P. Habas, P. Notingher, P. Frezel

IEEE Annual Conf. on El. Insulation and Diel. Phenomena CEIDP, 2012, Montréal, Canada. ⟨hal-01882817⟩

• Communication dans un congrès

Reliability studies of pentacene-based thin film transistors

Romuald Ledru, Stéphane Pleutin, Bruno Grouiez, Damien Zander, H. Bejbouji, Kamal Lmimouni, Dominique Vuillaume

The complex admittance of the Si+/SiO2/Pentacene/Au (metal/oxide/pentacene) thin film junctions is investigated under ambient conditions. The results are compared with the ones obtained for the corresponding Si+/SiO2/Au junctions (i.e. a small part of the surface left free from pentacene) which...

Materials Research Society Spring Meeting, MRS Spring 2012, Symposium J : Organic and Hybrid-Organic Electronics, 2012, San Francisco, CA, United States. ⟨10.1557/opl.2012.1248⟩. ⟨hal-00797703⟩

• Article dans une revue

Comparative study of erbium disilicide thin films grown in situ under ultrahigh vacuum or ex situ with a capping layer

N. Reckinger, C.A. Dutu, Xing Tang, Emmanuel Dubois, Dmitri Yarekha, S. Godey, L. Nougaret, A. Laszcz, J. Ratajczak, J.P. Raskin

Thin Solid Films, 2012, 520, pp.4501-4505. ⟨10.1016/j.tsf.2012.02.076⟩. ⟨hal-00787381⟩

• Article dans une revue

Ta/TiN midgap full-metal single gate fabrication using combined chlorine-based plasma and highly selective chemical metal etching for decananometer CMOS technology

Z.K. Chen, Emmanuel Dubois, F. Ravaux, Francois Danneville

High permittivity dielectric and metal gate are now the most demanded in advanced CMOS technology to overcome conventional polysilicon gate structure drawbacks. However, existing metal gate fabrication approaches are not capable to meet all the demands in terms of material engineering or...

Microelectronic Engineering, 2012, 97, pp.280-284. ⟨10.1016/j.mee.2012.04.035⟩. ⟨hal-00790412⟩

• Communication dans un congrès

Intelligent transports systems based on UWB technologies

Fouzia Boukour, Atika Rivenq

Ultra Wide Band (UWB) may offer very efficient solutions for various communication and localisation transport applications. We propose to use this technique to establish communication vehicle- to- vehicle and vehicle- to-infrastructure. In fact, compared to traditional carrier-based, Ultra-Wide...

IEEE European Wireless Conference, Sep 2012, Poland. 5p. ⟨hal-01068408⟩

• Communication dans un congrès

Towards highly scaled AlN/GaN-on-silicon devices for millimeter wave applications

F Medjdoub, Malek Zegaoui, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this work, the possibility to achieve GaN-on-Si devices for millimeter wave applications operating at high bias is demonstrated. It is shown that highly scaled AlN/GaN-on-Si double heterostructure enables to significantly improve the electron confinement under high electric field as compared to...

7th European Microwave Integrated Circuits Conference, EuMIC 2012, Oct 2012, Amsterdam, Netherlands. pp.321-324. ⟨hal-00814972⟩

• Communication dans un congrès

A direct conversion IQ modulator in CMOS 65 nm SOI for multi-gigabit 60 GHz systems

Christophe Loyez, A. Siligaris, P. Vincent, A. Cathelin, N. Rolland

7th European Microwave Integrated Circuits Conference, EuMIC 2012, 2012, Amsterdam, Netherlands. pp.5-7. ⟨hal-00814970⟩

• Communication dans un congrès

Surface engineering by plasma : spectroscopic characterization of an N2-Ar discharge

A. Annusova, J. Kristof, C. Foissac, P. Supiot, P. Veis

14th Conference of Doctoral Students, ELITECH'12, 2012, Bratislava, Slovakia. ⟨hal-00798839⟩