Publicaciones

• COMM

High transconductance on AlGaN/GaN HEMT on (110) silicon substrate

J.C. Gerbedoen, A. Soltani, Y. Cordier, Jean-Claude de Jaeger

7th European Microwave Integrated Circuits Conference, EuMIC 2012, 2012, Amsterdam, Netherlands. pp.413-416. ⟨hal-00814978⟩

• COMM

Cryogenic operation of InAs/AlSb HEMT hybrid LNAs

G. Moschetti, N. Wadefalk, P.A. Nilsson, M. Abbasi, L. Desplanque, X. Wallart, J. Grahn

7th European Microwave Integrated Circuits Conference, EuMIC 2012, 2012, Amsterdam, Netherlands. pp.373-376. ⟨hal-00814973⟩

• ART

Power harvesting capabilities of SHM ultrasonic sensors

Christophe Delebarre, Thomas Sainthuile, Sébastien Grondel, Christophe Paget

The aim of this work is to show that classical Structural Health Monitoring ultrasonic sensors may provide some power harvesting capabilities from a wide variety of vibration sources. In other words, the authors developed an integrated piezoelectric energy harvesting sensor capable of operating a...

Smart Materials Research, 2012, 2012, pp.387638. ⟨10.1155/2012/387638⟩. ⟨hal-00790375⟩

• ART

Boron distribution in the core of Si nanowire grown by chemical vapor deposition

W. Chen, V.G. Dubrovskii, X.L. Liu, T. Xu, Rodrigue Lardé, J.P. Nys, B. Grandidier, D. Stievenard, G. Patriarche, Philippe Pareige

The boron dopant distribution in Si nanowires grown by the Au-catalyzed chemical vapor deposition is characterized by laser-assisted atom probe tomography. A convenient and an effective method for performing the atom probe tomography of an individual nanowire is developed. Using this technique, we...

Journal of Applied Physics, 2012, 111 (9), pp.094909. ⟨10.1063/1.4714364⟩. ⟨hal-00787433⟩

• ART

Thermal boundary resistance at silicon-silica interfaces by molecular dynamics simulations

E. Lampin, Q.H. Nguyen, P.A. Francioso, F. Cleri

Applied Physics Letters, 2012, 100, pp.131906-1-4. ⟨10.1063/1.3698325⟩. ⟨hal-00787869⟩

• ART

Vertical III-V V-shaped nano-membranes epitaxially grown on a patterned Si[001] substrate and their enhanced light scattering

S. Conesa-Boj, E. Russo-Averchi, A. Dalmau-Mallorqui, J. Trevino, E.F. Pecora, C. Forestiere, A. Handin, M. Ek, L. Zweifel, L.R. Wallenberg, D. Rüffer, M. Heiss, David Troadec, L. Dal Negro, P. Caroff, A. Fontcuberta I Morral

ACS Nano, 2012, 6, pp.10982-10991. ⟨10.1021/nn304526k⟩. ⟨hal-00788197⟩

• ART

Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy

C. Thelander, P. Caroff, S.R. Plissard, K.A. Dick

Applied Physics Letters, 2012, 100, pp.232105-1-4. ⟨10.1063/1.4726037⟩. ⟨hal-00786987⟩

• ART

Small polaron migration associated multiple dielectric responses of multiferroic DyMnO3 polycrystal in low temperature region

J. Yang, J. He, J.Y. Zhu, W. Bai, Luyan Sun, X.J. Meng, X.D. Tang, C.G. Duan, Denis Remiens, J.H. Qiu, J.H. Chu

Applied Physics Letters, 2012, 101, pp.222904-1-5. ⟨10.1063/1.4768790⟩. ⟨hal-00788345⟩

• ART

Efficient physical-thermal model for thermal effects in AlGaN/GaN high electron mobility transistors

Michel Rousseau, A. Soltani, Jean-Claude de Jaeger

This letter describes the thermal behavior of AlGaN/GaN high electron mobility transistors on different substrates thanks to a fully consistent physical-thermal model. Self-heating explains the drastic reduction in the current flowing from drain to source. It is shown that, in order to keep the...

Applied Physics Letters, 2012, 101 (12), pp.122101. ⟨10.1063/1.4753815⟩. ⟨hal-00787873⟩

• ART

Strain relief and growth optimization of GaSb on GaP by molecular beam epitaxy

Y. Wang, P. Ruterana, Jie Chen, L. Desplanque, S. El Kazzi, X. Wallart

Journal of Physics: Condensed Matter, 2012, 24, pp.335802-1-7. ⟨10.1088/0953-8984/24/33/335802⟩. ⟨hal-00787023⟩