Publicaciones

• Article dans une revue

Mechanism of formation of the misfit dislocations at the cubic materials interfaces

Y. Wang, P. Ruterana, S. Kret, Jie Chen, S. El Kazzi, L. Desplanque, X. Wallart

Applied Physics Letters, 2012, 100, pp.262110-1-5. ⟨10.1063/1.4731787⟩. ⟨hal-00787021⟩

• Article dans une revue

Characterization of the state of a droplet on a micro-textured silicon wafer using ultrasound

N. Saad, Renaud Dufour, Pierre Campistron, Georges Nassar, Julien Carlier, Maxime Harnois, B. Merheb, Rabah Boukherroub, V. Senez, J. Gao, Vincent Thomy, M. Ajaka, Bertrand Nongaillard

In this work, we propose acoustic characterization as a new method to probe wetting states on a superhydrophobic surface. The analysis of the multiple reflections of a longitudinal acoustic wave from solid-liquid and solid-vapor interfaces enables to distinguish between the two well known Cassie-...

Journal of Applied Physics, 2012, 112 (10), pp.104908. ⟨10.1063/1.4767223⟩. ⟨hal-00788344⟩

• Article dans une revue

Anomaly and defects characterization by I-V and current deep level transient spectroscopy of Al0.25Ga0.75N/GaN/SiC high electron-mobility transistors

S. Saadaoui, M.M. Ben Salem, M. Gassoumi, H. Maaref, Christophe Gaquière

In this paper, we report static electric drain-source current-voltage measurements for different gate voltages and at different temperatures, performed on Al0.25Ga0.75N/GaN/SiC high electron-mobility transistors (HEMT). The results show the presence of kink and collapse effects. We have...

Journal of Applied Physics, 2012, 111 (7), pp.073713. ⟨10.1063/1.3702458⟩. ⟨hal-00787870⟩

• Article dans une revue

Numerical and experimental investigation of kerf depth effect on high-frequency phased array transducer

Jin-Ying Zhang, Wei-Jiang Xu, Julien Carlier, X.M. Ji, S. Queste, Bertrand Nongaillard, Y.P. Huang

Background High-frequency ultrasonic transducer arrays are essential for high resolution imaging in clinical analysis and Non-Destructive Evaluation (NDE). However, the structure design and fabrication of the kerfed ultrasonic array is quite challenging when very high frequency (⩾100 MHz) is...

Ultrasonics, 2012, 52, pp.223-229. ⟨10.1016/j.ultras.2011.08.006⟩. ⟨hal-00790373⟩

• Article dans une revue

Dielectric, ferroelectric and piezoelectric properties of 100-oriented Pb0.4Sr0.6TiO3 thin film sputtered on LaNiO3 electrode

X. Lei, Denis Remiens, N. Sama, Y. Chen, C.L. Mao, X.L. Dong, G.S. Wang

Journal of Crystal Growth, 2012, 347, pp.15-18. ⟨10.1016/j.jcrysgro.2012.03.026⟩. ⟨hal-00788337⟩

• Article dans une revue

Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques

T. Xu, K.A. Dick, S.R. Plissard, T.H. Nguyen, Y. Makoudi, Maxime Berthe, J.P. Nys, X. Wallart, B. Grandidier, P. Caroff

Nanotechnology, 2012, 23, pp.095702-1-9. ⟨10.1088/0957-4484/23/9/095702⟩. ⟨hal-00787477⟩

• Article dans une revue

Strain relief and growth optimization of GaSb on GaP by molecular beam epitaxy

Y. Wang, P. Ruterana, Jie Chen, L. Desplanque, S. El Kazzi, X. Wallart

Journal of Physics: Condensed Matter, 2012, 24, pp.335802-1-7. ⟨10.1088/0953-8984/24/33/335802⟩. ⟨hal-00787023⟩

• Article dans une revue

Growth mode dependence of misfit dislocation configuration at lattice mismatched III-V semiconductor interfaces

Y. Wang, P. Ruterana, L. Desplanque, S. El Kazzi, X. Wallart

EPL - Europhysics Letters, 2012, 97, pp.68011-1-6. ⟨10.1209/0295-5075/97/68011⟩. ⟨hal-00786985⟩

• Article dans une revue

480-GHz fmax in InP/GaAsSb/InP DHBT with new base isolation µ-airbridge design

M. Zaknoune, E. Mairiaux, Yannick Roelens, N. Waldhoff, U. Rouchy, P. Frijlink, M. Rocchi, H. Maher

IEEE Electron Device Letters, 2012, 33, pp.1381-1383. ⟨10.1109/LED.2012.2210187⟩. ⟨hal-00786893⟩

• Communication dans un congrès

Atomistic calculations of the mobility in ultimate Si (Ge) nanowires and carbon nanotubes

Y.M. Niquet, J. Li, V.H. Nguyen, F. Triozon, W. Zhang, Christophe Krzeminski, L. Genovese, D. Rideau, C. Delerue

6th International Meeting on Molecular Electronics, ElecMol'12, 2012, Grenoble, France. ⟨hal-00797753⟩