Publicaciones

• ART

A complete UMTS transmitter using BAW filters and duplexer : a 90-nm CMOS digital RF signal generator and a 0.25-μm BiCMOS power amplifier

A. Flament, A. Frappe, B. Stefanelli, A. Kaiser, A. Cathelin, S. Giraud, Matthieu Chatras, Stéphane Bila, Dominique Cros, J.B. David, L. Leyssenne, E. Kerherve

International Journal of RF and Microwave Computer-Aided Engineering, 2011, 21, pp.466-476. ⟨10.1002/mmce.20551⟩. ⟨hal-00639862⟩

• ART

AlN/GaN heterostructures grown by metal organic vapour phase epitaxy with in situ Si3N4 passivation

K. Cheng, S. Degroote, M. Leys, F Medjdoub, J. Derluyn, B. Sijmus, Marie Germain, G. Borghs

Journal of Crystal Growth, 2011, 315, pp.204-207. ⟨10.1016/j.jcrysgro.2010.09.025⟩. ⟨hal-00572672⟩

• ART

The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT's on SiC substrates

M. Gassoumi, M.M. Ben Salem, S. Saadaoui, B. Grimbert, Julien Fontaine, Christophe Gaquière, H. Maaref

Microelectronic Engineering, 2011, 88, pp.370-372. ⟨10.1016/j.mee.2010.09.027⟩. ⟨hal-00572669⟩

• ART

Controlling the transmission of ultrahigh frequency bulk acoustic waves in silicon by 45° mirrors

S. Wang, J. Gao, Julien Carlier, Pierre Campistron, Assane Ndieguene, S. Guo, Olivier Bou Matar, Dorothée Debavelaere-Callens, Bertrand Nongaillard

In this paper, we present a feasible microsystem in which the direction of localized ultrahigh frequency (∼1 GHz) bulk acoustic wave can be controlled in a silicon wafer. Deep etching technology on the silicon wafer makes it possible to achieve high aspect ratio etching patterns which can be used...

Ultrasonics, 2011, 51, pp.532-538. ⟨10.1016/j.ultras.2011.01.003⟩. ⟨hal-00574498⟩

• COUV

Confined and guided vapor-liquid-solid catalytic growth of silicon nanoribbons : from nanowires to structured silicon-on-insulator layers

Aurélie Lecestre, Emmanuel Dubois, A. Villaret, T. Skotnicki, P. Coronel, G. Patriarche, C. Maurice

Nazarov A., Colinge J.P., Balestra F., Raskin J.P., Gamiz F., Lysenko V.S. Semiconductor-on-insulator materials for nanoelectronics applications, Springer Berlin Heidelberg, pp.Part 1, 67-89, 2011, Collection : Chemistry and materials science, Series : Engineering materials, ⟨10.1007/978-3-642-15868-1_4⟩. ⟨hal-00591734⟩

• ART

The air-liquid flow in a microfluidic airway tree

Yu Song, Michael Baudoin, Paul Manneville, Charles N. Baroud

Microfluidic techniques are employed to investigate air-liquid flows in the lung. A network of microchannels with five generations is made and used as a simplified model of a section of the pulmonary airway tree. Liquid plugs are injected into the network and pushed by a flow of air; they divide at...

Medical Engineering & Physics, 2011, 33 (7), pp.849-856. ⟨10.1016/j.medengphy.2010.10.001⟩. ⟨hal-00795906⟩

• COMM

PhoXonic architectures for tailoring the acousto-optic interaction

Nikos Papanikolaou, I.E. Psarobas, G. Gantzounis, E. Almpanis, N. Stefanou, Bahram Djafari-Rouhani, Bernard Bonello, Vincent Laude

Conference on Nonlinear Optics and Applications V, Apr 2011, Prague, Czech Republic. pp.80710Z, ⟨10.1117/12.886562⟩. ⟨hal-00646872⟩

• ART

Value of bioremediation for reducing the phenanthrene toxic effect on benthic communities of bacteria and free-iiving nematodes, Interet de la biorémediation dans la réduction de l'effet toxique du phénanthrène sur les communautés de bactéries et de nématodes libres benthiques

Haithem Louati, O. Ben Said, A. Soltani, Ezzedine Mahmoudi, Cristiana Cravo-Laureau, Robert Duran, O. Pringault, P. Aissa

A microcosm experiment was carried out to evaluate the impact of bioremediation of marine sediments artifïcially contaminated with phenanthrene (100 ppm) on benthic communities of bacteria and free-living nematodes from Bizerte lagoon (Tunisia). Bioremediation schemes tested included biostimulation...

Bulletin De La Société Zoologique De France, 2011, 136 (1-4), pp.131-144. ⟨hal-01631860⟩

• ART

High-performance low-leakage-current AlN/GaN HEMTs grown on silicon substrate

F Medjdoub, Malek Zegaoui, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this letter, ultrathin-barrier AlN/GaN high-electron mobility transistors (HEMTs) capped with in situ metal-organic-chemical-vapor-deposition- grown SiN have been successfully fabricated on 100-mm Si substrates. Output current density exceeding 2 A/mm has been reached, which represents, to the...

IEEE Electron Device Letters, 2011, 32 (7), pp.874-876. ⟨10.1109/LED.2011.2138674⟩. ⟨hal-00639802⟩

• ART

150-GHz RF SOI-CMOS technology in ultrathin regime on organic substrate

A. Lecavelier Des Etangs-Levallois, Emmanuel Dubois, Marie Lesecq, Francois Danneville, L. Poulain, Y. Tagro, Sylvie Lepilliet, D. Gloria, C. Raynaud, David Troadec

This letter provides an experimental demonstration of high-performance industrial MOSFETs thinned down to 5.7 μm and transferred onto a 125- μm -thick polyethylene naphthalate foil. The die stack transferred onto the organic substrate comprises the 200-nm-thick active layer and the 5.5- μm -thick...

IEEE Electron Device Letters, 2011, 32 (11), pp.1510-1512. ⟨10.1109/LED.2011.2166241⟩. ⟨hal-00639864⟩