Publicaciones

• Communication dans un congrès

Transmission electron microscopy of misfit dislocation and strain relaxation in lattice mismatched III-V heterostructures versus substrate surface treatment

Y. Wang, P. Ruterana, L. Desplanque, S. El Kazzi, X. Wallart

Materials Research Society Spring Meeting, MRS Spring 2011, Symposium D : Compound semiconductors for energy applications and environmental sustainability, 2011, San Francisco, CA, United States. pp.143-148, ⟨10.1557/opl.2011.841⟩. ⟨hal-00799993⟩

• Communication dans un congrès

Very low effective electromagnetic parameters lenses for the unlicensed 60 GHz band

Miguel Navarro-Cia, Miguel Beruete, Mario Sorolla, Tahsin Akalin, Nader Engheta

In this presentation advances on metallic lenses based on extreme electromagnetic parameters will be shown: either epsilon near zero or epsilon and mu near zero simultaneously. The former is generated by an array of continuous waveguides at cutoff, whereas the latter is composed of stacked...

36th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2011, Oct 2011, Houston, TX, United States. paper M2E.6, 1-2, ⟨10.1109/irmmw-THz.2011.6104807⟩. ⟨hal-00800491⟩

• Communication dans un congrès

Investigation of fabricating a LiNbO3 ultrasonic phased array transducer of more than 100 MHz

Jin-Ying Zhang, Wei-Jiang Xu, Julien Carlier, X.M. Ji, Bertrand Nongaillard, S. Queste, Y.P. Huang

36°/Y-cut lithium niobate (LiNbO 3 ) single crystals have been patterned by means of Inductively Coupled Plasma (ICP) deep etching to create ultrasonic arrays resonating in the frequency range of 100-200 MHz. The limitation of etching aspect ratio and the minimum pitch are explored under the...

IEEE Sensors Conference, 2011, Limerick, Ireland. pp.1542-1545, ⟨10.1109/ICSENS.2011.6126901⟩. ⟨hal-00800448⟩

• Article dans une revue

Beyond 100 GHz AlN/GaN HEMTs on silicon substrate

F Medjdoub, Malek Zegaoui, N. Rolland

A report is presented on high-speed 100nm AlN/GaN high-electron-mobility transistors (HEMTs) grown on (111) high-resistive silicon substrate. The device delivers an extrinsic peak transconductance gm=530mS/mm, a maximum current of 1.74A/mm, and current gain and maximum oscillation cutoff...

Electronics Letters, 2011, 47 (24), pp.1345-1346. ⟨10.1049/el.2011.3166⟩. ⟨hal-00783379⟩

• Communication dans un congrès

Anisotropic transport of InAs/AlSb heterostructures grown on InP substrates

G. Moschetti, H. Zhao, P.A. Nilsson, S. Wang, A. Kalabukhov, Gilles Dambrine, S. Bollaert, L. Desplanque, X. Wallart, J. Grahn

35th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2011, 2011, Catania, Italy. pp.17-18. ⟨hal-00799700⟩

• Autre publication scientifique

Tunneling spectroscopy of hetero-nanocrystals

Thanh Hai Nguyen

2011. ⟨hal-00799435⟩

• Autre publication scientifique

Développements de capacités variables en technologie silicium pour les applications RF et mmW

Romain Debroucke

2011. ⟨hal-00799451⟩

• Communication dans un congrès

Plasmonics for terahertz QCL beam shaping

Tahsin Akalin

International Workshop on Optical Terahertz Science and Technology, OTST 2011, 2011, Santa Barbara, CA, United States. ⟨hal-00807711⟩

• Communication dans un congrès

[Invited] THz quantum cascade lasers. Coherent control of terahertz quantum cascade laser emission

S. Barbieri, P. Gellie, G. Santarelli, M. Ravaro, L. Ding, W. Maineult, P. Filloux, C. Manquest, C. Sirtori, Jean-Francois Lampin, R. Colombelli, S.P. Khanna, E.H. Linfield, A.G. Davies, H. Beere, D. Ritchie

European Microwave Week, EuMIC/EuMC, Workshop W01 : Terahertz technologies - from devices to diverse systems, 2011, Manchester, United Kingdom. ⟨hal-00807697⟩

• Communication dans un congrès

AlGaN/GaN high electron mobility transistors with a metal field-plate structure

M. Kaddeche, A. Telia, A. Soltani

9th International Conference on Nitride Semiconductors, ICNS-9, 2011, Glasgow, United Kingdom. ⟨hal-00807602⟩