Publicaciones

• Article dans une revue

Growth of GaN based structures on focused ion beam patterned GaN

Yvon Cordier, Olivier Tottereau, Lee Nguyen, Mohammed Réda Ramdani, Ali Soltani, Mohamed Boucherit, David Troadec, Fang-Yuh Lo, Y.Y. Hu, Arne Ludwig, Andreas D Wieck

Focused ion beam technique is a powerful tool for defining patterns within a semiconductor film. In this paper, we show that it is possible to realize patterns such as disks and columns within thick GaN templates and that it is compatible with the regrowth of GaN based heterostructures. We study...

Physica Status Solidi C: Current Topics in Solid State Physics, 2011, 8 (5), pp.1516-1519. ⟨10.1002/pssc.201000882⟩. ⟨hal-00603099⟩

• Article dans une revue

Field-induced vortices in weakly anisotropic ferroelectrics

Anaïs Sené, Laurent Baudry, Igor A. Luk'Yanchuk, Laurent Delahoche, Y. El Amraoui

Superlattices and Microstructures, 2011, 49, pp.314-317. ⟨10.1016/j.spmi.2010.05.001⟩. ⟨hal-00574497⟩

• Communication dans un congrès

Fabrication et caractérisation de MOSFET In0.53Ga0.47As de type N en technologie auto-aligné et de longueur de grille de 300nm

J. Mo, A. Olivier, Nicolas Wichmann, Yannick Roelens, L. Desplanque, X. Wallart, Francois Danneville, Gilles Dambrine, F. Martin, O. Desplats, S. Bollaert

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, France. papier 122, 2C3, 1-4. ⟨hal-00597145⟩

• Communication dans un congrès

Systèmes radiofréquences avancés pour communication inter-puces multi-gigabits à 60GHz

S. Foulon, Christophe Loyez, S. Pruvost, N. Rolland

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, France. papier 274, 2E8, 1-3. ⟨hal-00597147⟩

• Article dans une revue

Above 600 mS/mm transconductance with 2.3 A/mm drain current density AlN/GaN high electron mobility transistors grown on silicon

F Medjdoub, Malek Zegaoui, Nicolas Waldhoff, B. Grimbert, N. Rolland, Paul-Alain Rolland

AlN/GaN high-electron-mobility transistors (HEMTs) capped with an in-situ grown SiN have been successfully developed on 100mm Si substrates. A unique combination of maximum output current density exceeding 2A/mm and a record extrinsic transconductance above 600 mS/mm has been reached, which is well...

Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4 (6), pp.064106-1-3. ⟨10.1143/APEX.4.064106⟩. ⟨hal-00603010⟩

• Communication dans un congrès

[Invited] On-wafer S-parameters and noise measurements from D to J-band

N. Waldhoff

European Microwave Week, EuMIC/EuMC, Workshop W10 - From de-embedding to waveform engineering, 2011, Manchester, United Kingdom. ⟨hal-00807123⟩

• Article dans une revue

A silicon nanowire ion-sensitive field-effect-transistor with elementary charge sensitivity

N. Clement, K. Nishiguchi, Jean-François Dufrêche, David Guérin, A. Fujiwara, D. Vuillaume

We investigate the mechanisms responsible for the low-frequency noise in liquid-gated nanoscale silicon nanowire field-effect transistors (SiNW-FETs) and show that the charge-noise level is lower than elementary charge. Our measurements also show that ionic strength of the surrounding electrolyte...

Applied Physics Letters, 2011, 98, pp.014104-3. ⟨10.1063/1.3535958⟩. ⟨hal-00572646⟩

• Article dans une revue

Subterahertz hypersound attenuation in silica glass studied via picosecond acoustics

Simon Ayrinhac, Marie Foret, Arnaud Devos, Benoit Ruffle, Eric Courtens, René Vacher

We report picosecond acoustic measurements in silica-glass films grown by wet thermal oxidation on a (111) silicon substrate. The longitudinal acoustic phonons are observed over the range from 150 to 300 GHz using an infrared pump and a second harmonic blue probe. The transducer is an aluminum thin...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (1), pp.014204. ⟨10.1103/PhysRevB.83.014204⟩. ⟨hal-00567412⟩

• Article dans une revue

Influence of a localized defect on acoustic field correlation in a reverberant medium

Najib Abou Leyla, Emmanuel Moulin, Jamal Assaad

Journal of Applied Physics, 2011, 110, pp.084906-1-8. ⟨10.1063/1.3652907⟩. ⟨hal-00639940⟩

• Article dans une revue

Initial stages of graphitization on SiC(000-1), as studied by phase atomic force microscopy

F.J. Ferrer, E. Moreau, D. Vignaud, D. Deresmes, S. Godey, X. Wallart

The initial stages of graphitization on 4H- and 6H-SiC (000-1) under ultrahigh vacuum at temperatures of 1125–1175°C have been studied by atomic force microscopy (AFM), X-ray photoemission spectroscopy and reflected high energy electron diffraction. A progressive coverage of the surface by graphene...

Journal of Applied Physics, 2011, 109 (5), pp.054307-1-6. ⟨10.1063/1.3560896⟩. ⟨hal-00577059⟩