Publicaciones

• ART

Effects of ultrathin TiOx seeding layer on crystalline orientation and electrical properties of sputtered (Ba,Sr)TiO3 thin films

L.H. Yang, G.S. Wang, X.L. Dong, Denis Remiens

Journal of the American Ceramic Society, 2010, 93, pp.2136-2139. ⟨10.1111/j.1551-2916.2010.03677.x⟩. ⟨hal-00549507⟩

• ART

Two-dimensional simulation of the single-sided air-coupled ultrasonic pitch-catch technique for non-destructive testing

S. Delrue, K. van den Abeele, E. Blomme, J. Deveugele, P. Lust, Olivier Bou Matar

Ultrasonics, 2010, 50, pp.188-196. ⟨10.1016/j.ultras.2009.08.005⟩. ⟨hal-00549561⟩

• ART

Gold-free growth of GaAs nanowires on silicon : arrays and polytypism

S.R. Plissard, K. A. Dick, G. Larrieu, S. Godey, A. Addad, X. Wallart, P. Caroff

Nanotechnology, 2010, 21, pp.385602-1-8. ⟨10.1088/0957-4484/21/38/385602⟩. ⟨hal-00548717⟩

• ART

Computer simulation of disordered structures and nanosystems : an atomic-scale view

C. Massobrio, F. Cleri, R. Kozubski

Solid State Sciences, 2010, 12, pp.155-156. ⟨10.1016/j.solidstatesciences.2010.01.016⟩. ⟨hal-00549045⟩

• ART

Femtosecond laser texturization for improvement of photovoltaic cells: Black Silicon

R. Torres, V. Vervisch, Mathieu Halbwax, Thierry Sarnet, Philippe Delaporte, Marc Sentis, Jorge Ferreira, Damien Barakel, S. Bastide, F. Torregrosa, H. Etienne, L. Roux

Journal of Optoelectronics and Advanced Materials, 2010, 12 (3), pp.621 - 625. ⟨hal-00542642⟩

• ART

Electron traps studied in AlGaN/GaN HEMT on Si substrate using capacitance deep level transient spectroscopy

H. Mosbahi, M. Gassoumi, M. Charfeddine, M.A. Zaidi, Christophe Gaquière, H. Maaref

Journal of Optoelectronics and Advanced Materials, 2010, 12, pp.2190-2193. ⟨hal-00573158⟩

• ART

Analysis of the degradation induced by focused ion Ga3+ beam for the realization of piezoelectric nanostructures

Denis Remiens, R.H. Liang, Caroline Soyer, D. Deresmes, David Troadec, S. Quignon, Antonio Da Costa, Rachel Desfeux

Piezoelectric nanostructures (islands of dimensions in the lateral size range 50–500 nm) have been fabricated by focused Ga3+ ion beam (FIB) etching on PbZr0.54Ti0.46O3 thin films obtained by magnetron sputtering. The degradation induced by the etching process is investigated through the evolution...

Journal of Applied Physics, 2010, 108 (4), pp.0420084. ⟨10.1063/1.3474963⟩. ⟨hal-00549916⟩

• ART

Voltage tunable surface acoustic wave phase shifter on AlGaN/GaN

J. Pedros, F. Calle, R. Cuerdo, J. Grajal, Z. Bougrioua

Applied Physics Letters, 2010, 96, pp.123505-1-3. ⟨10.1063/1.3353971⟩. ⟨hal-00567879⟩

• ART

Analysis of a narrowband terahertz signal generated by a unitravelling carrier photodiode coupled with a dual-mode semiconductor Fabry-Pérot laser

Sylwester Latkowski, Josué Parra-Cetina, Ramon Maldonado-Basilio, Pascal Landais, Guillaume Ducournau, Alexandre Beck, Emilien Peytavit, Tahsin Akalin, Jean-Francois Lampin

A narrowband terahertz signal generated by a unitravelling carrier photodiode (UTC-PD) interfaced with a dual-mode Fabry–Pérot laser diode is demonstrated. A beat tone corresponding to the free spectral range is generated on the UTC-PD, and radiated by a transverse-electromagnetic-horn antenna. A...

Applied Physics Letters, 2010, 96, pp.241106-1-3. ⟨10.1063/1.3447931⟩. ⟨hal-00548701⟩

• ART

Microwave properties of epitaxial (111)-oriented Ba0.6Sr0.4TiO3 thin films on Al2O3(0001) up to 40 GHz

L.H. Yang, Freddy Ponchel, G.S. Wang, Denis Remiens, Jean-François Legier, D. Chateigner, X.L. Dong

Applied Physics Letters, 2010, 97, pp.162909-1-3. ⟨10.1063/1.3478015⟩. ⟨hal-00549523⟩