Publicaciones

• Article dans une revue

An ontology-based framework for geospatial clustering

Xin Wang, Wei Gu, Danielle Ziébelin, Howard J. Hamilton

no abstract

International Journal of Geographical Information Science, 2010, 24 (11), pp.1601-1630. ⟨hal-00953146⟩

• Article dans une revue

DC performance of high-quantum-efficiency 1.3µm GaNAsSb/GaAs waveguide photodetector

Z. Xu, N. Saadsaoud, Malek Zegaoui, Wan Khai Loke, Kianhuan Tan, S. Wicaksono, Soon Fatt Yoon, Christiane Legrand, Didier Decoster, Jean Chazelas

We present the dc performance of a high-quantum-efficiency GaNAsSb/GaAs p-i-n waveguide photodetector. GaNAsSb with N and Sb contents of 3.3% and 8%, respectively, is sandwiched by AlGaAs/GaAs cladding layers. Two types of device epilayer structures, i.e., with and without AlGaAs cladding layer,...

IEEE Electron Device Letters, 2010, 31 (5), pp.449-451. ⟨10.1109/LED.2010.2041742⟩. ⟨hal-00549004⟩

• Article dans une revue

Polarization-independent imaging with an acousto-optic tandem system

Konstantin B. Yushkov, Samuel Dupont, Jean-Claude Kastelik, V.B. Voloshinov

Optics Letters, 2010, 35, pp.1416-1418. ⟨10.1364/OL.35.001416⟩. ⟨hal-00549023⟩

• Article dans une revue

Rigorous extraction tunability of Si-integrated Ba0.3Sr0.7TiO3 thin film up to 60 GHz

Freddy Ponchel, Jean-François Legier, Caroline Soyer, Denis Remiens, Jean Midy, Tuami Lasri, Guillaume Guéguan

400-nm-thick Ba0.3Sr0.7TiO3 thin films are deposited on high resistivity silicon by in situ radio frequency magnetron sputtering. Coplanar waveguides with 1µm slot width are designed, with accurate knowledge frequency losses behavior, to determine ferroelectric thin-films properties up to 60 GHz....

Applied Physics Letters, 2010, 96, pp.252906-1-3. ⟨10.1063/1.3454772⟩. ⟨hal-00549520⟩

• Article dans une revue

Interface depolarization field as common denominator of fatigue and size effect in Pb(Zr0.54Ti0.46)O3 ferroelectric thin film capacitors

Rachid Bouregba, N. Sama, Caroline Soyer, Gilles Poullain, Denis Remiens

Dielectric, hysteresis and fatigue measurements are performed on Pb(Zr0.54Ti0.46)O3 (PZT) thin film capacitors with different thicknesses and different electrode configurations, using platinum and LaNiO3 conducting oxide. The data are compared with those collected in a previous work devoted to...

Journal of Applied Physics, 2010, 107, pp.104102-1-9. ⟨10.1063/1.3380837⟩. ⟨hal-00549521⟩

• Article dans une revue

Two-dimensional Legendre polynomial modeling of composite bulk acoustic wave resonators

A. Raherison, Jean-Etienne Lefebvre, F.E. Ratolojanahary, L. Elmaimouni, Tadeusz Gryba

A bidimensional analysis of 6 mm hexagonal resonators is described using a double orthonormal basis set for the expansion of field quantities. The analysis takes into account the electrical voltage source and by means of a unique formalism along with a single calculation restitutes all the types of...

Journal of Applied Physics, 2010, 108 (10), pp.104904. ⟨10.1063/1.3504611⟩. ⟨hal-00549534⟩

• Article dans une revue

Improved dielectric properties of Bi1.5Zn1.0Nb1.5O7/(111)-oriented Ba0.6Sr0.4TiO3 bilayered films for tunable microwave applications

L.H. Yang, G.S. Wang, X.L. Dong, Denis Remiens

Journal of the American Ceramic Society, 2010, 93, pp.1215-1217. ⟨10.1111/j.1551-2916.2009.03516.x⟩. ⟨hal-00549505⟩

• Article dans une revue

Label-free analysis of water-polluting parasite by electrochemical impedance spectroscopy

T. Houssin, J. Follet, A. Follet, E. Dei-Casa, V. Senez

Biosensors and Bioelectronics, 2010, 25, pp.1122-1129. ⟨10.1016/j.bios.2009.09.039⟩. ⟨hal-00549495⟩

• Article dans une revue

Control of III-V nanowire crystal structure by growth parameter tuning [Invited]

Kimberly A. Dick, Philippe Caroff, Jessica Bolinsson, Maria E. Messing, Jonas Johansson, Knut Deppert, L.R. Wallenberg, Lars Samuelson

In this work we investigate the variation of the crystal structure of gold-seeded III–V nanowires with growth parameters, in order to gain a cohesive understanding of these effects. We investigate six III–V materials: GaAs, InAs, GaP, InP, GaSb and InSb, over a variation of growth conditions. All...

Semiconductor Science and Technology, 2010, 25 (2), pp.024009-1-11. ⟨10.1088/0268-1242/25/2/024009⟩. ⟨hal-00548699⟩

• Autre publication scientifique

Caractérisation large bande et en bruit de différents MOSFETs en vue d'une utilisation optimisée dans des circuits RF

Mohammad Mostafa Emam

2010. ⟨hal-00572687⟩