Publicaciones

• Communication dans un congrès

100mV noise performances of Te-doped Sb-HEMT

A. Noudeviwa, A. Olivier, Yannick Roelens, Francois Danneville, Nicolas Wichmann, N. Waldhoff, L. Desplanque, X. Wallart, S. Bollaert

8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, Slovakia. pp.25-28, ⟨10.1109/ASDAM.2010.5667012⟩. ⟨hal-00549922⟩

• Article dans une revue

DC performance of high-quantum-efficiency 1.3µm GaNAsSb/GaAs waveguide photodetector

Z. Xu, N. Saadsaoud, Malek Zegaoui, Wan Khai Loke, Kianhuan Tan, S. Wicaksono, Soon Fatt Yoon, Christiane Legrand, Didier Decoster, Jean Chazelas

We present the dc performance of a high-quantum-efficiency GaNAsSb/GaAs p-i-n waveguide photodetector. GaNAsSb with N and Sb contents of 3.3% and 8%, respectively, is sandwiched by AlGaAs/GaAs cladding layers. Two types of device epilayer structures, i.e., with and without AlGaAs cladding layer,...

IEEE Electron Device Letters, 2010, 31 (5), pp.449-451. ⟨10.1109/LED.2010.2041742⟩. ⟨hal-00549004⟩

• Article dans une revue

Improved dielectric properties of Bi1.5Zn1.0Nb1.5O7/(111)-oriented Ba0.6Sr0.4TiO3 bilayered films for tunable microwave applications

L.H. Yang, G.S. Wang, X.L. Dong, Denis Remiens

Journal of the American Ceramic Society, 2010, 93, pp.1215-1217. ⟨10.1111/j.1551-2916.2009.03516.x⟩. ⟨hal-00549505⟩

• Article dans une revue

Label-free analysis of water-polluting parasite by electrochemical impedance spectroscopy

T. Houssin, J. Follet, A. Follet, E. Dei-Casa, V. Senez

Biosensors and Bioelectronics, 2010, 25, pp.1122-1129. ⟨10.1016/j.bios.2009.09.039⟩. ⟨hal-00549495⟩

• Article dans une revue

Control of III-V nanowire crystal structure by growth parameter tuning [Invited]

Kimberly A. Dick, Philippe Caroff, Jessica Bolinsson, Maria E. Messing, Jonas Johansson, Knut Deppert, L.R. Wallenberg, Lars Samuelson

In this work we investigate the variation of the crystal structure of gold-seeded III–V nanowires with growth parameters, in order to gain a cohesive understanding of these effects. We investigate six III–V materials: GaAs, InAs, GaP, InP, GaSb and InSb, over a variation of growth conditions. All...

Semiconductor Science and Technology, 2010, 25 (2), pp.024009-1-11. ⟨10.1088/0268-1242/25/2/024009⟩. ⟨hal-00548699⟩

• Article dans une revue

Graphene buffer layer on Si-terminated SiC studied with an empirical interatomic potential

Evelyne Lampin, Catherine Priester, Christophe Krzeminski, Laurence Magaud

The atomistic structure of the graphene buffer layer on Si-terminated SiC is investigated using a modified version of the environment-dependent interatomic potential. The determination of the equilibrium state by the conjuguate gradients method suffers from a complex multiple-minima energy surface...

Journal of Applied Physics, 2010, 107 (10), pp.103514. ⟨10.1063/1.3357297⟩. ⟨hal-00549078⟩

• Article dans une revue

Fully relaxed low-mismatched InAlAs layer on an InP substrate by using a two step buffer

S.R. Plissard, Christophe Coinon, Ydir Androussi, X. Wallart

The strain relaxation in low mismatched InxAl1−xAs layers has been studied by triple axis x-ray diffraction, transmission electron microscopy, and photoluminescence. Using a two step buffer, a fully relaxed top layer has been grown by adapting the composition and thickness of a first “strained...

Journal of Applied Physics, 2010, 107 (1), pp.0161021. ⟨10.1063/1.3275872⟩. ⟨hal-00548708⟩

• Article dans une revue

Voltage tunable surface acoustic wave phase shifter on AlGaN/GaN

J. Pedros, F. Calle, R. Cuerdo, J. Grajal, Z. Bougrioua

Applied Physics Letters, 2010, 96, pp.123505-1-3. ⟨10.1063/1.3353971⟩. ⟨hal-00567879⟩

• Communication dans un congrès

[Invited] Terahertz plasmonic filters, power dividers and applications to microscopy and communications

Tahsin Akalin, Wenchen Chen, Ibrahim Türer, Willie J. Padilla

Photonics Global Conference, PGC 2010, Terahertz Technology Special Session, 2010, Suntec City, Singapore. ⟨hal-00808321⟩

• Article dans une revue

Nerve Agent Sensors Sub-ppm Detection of Nerve Agents Using Chemically Functionalized Silicon Nanoribbon Field-Effect Transistors**

Simon Clavaguera, Alexandre Carella, Laurent Caillier, Caroline Celle, Jacques Pécaut, Stéphane Lenfant, Dominique Vuillaume, Jean-Pierre Simonato

Organophosphorus compounds (OPs) represent one of the most important and lethal classes of chemical warfare agents (e.g. sarin, tabun, soman). Highly active volatile OPs are powerful inhibitors of acetylcholinesterase, which is a critical enzyme of the nervous system. [1] The ease of manufacturing...

Angewandte Chemie, 2010, 49, pp.4063-4066. ⟨10.1002/anie.201000122⟩. ⟨cea-01344100⟩