Publications

• Communication dans un congrès

Acoustic waves in one dimensional phononic crystals

El Houssaine, E.H. El Boudouti, Y. El Hassouani, Bahram Djafari-Rouhani

1st Mediterranean Congress on Acoustics, MCA 2010, 2010, Salé, Morocco. ⟨hal-00808213⟩

• Article dans une revue

Electronic structure and radial breathing mode for carbon nanotubes with ultra-high curvature

W. Plank, R. Pfeiffer, C. Scharman, L. Wirtz, M. Calvaresi, F. Zerbetto, J. Meyer, H. Kuzmany

physica status solidi (b), 2010, 247, pp.2774-2778. ⟨10.1002/pssb.201000357⟩. ⟨hal-00800832⟩

• Article dans une revue

Ab initio calculation of the binding energy of impurities in semiconductors : application to Si nanowires

Y.M. Niquet, L. Genovese, C. Delerue, T. Deutsch

We discuss the binding energy Eb of impurities in semiconductors within density functional theory (DFT) and the GW approximation, focusing on donors in nanowires as an example. We show that DFT succeeds in the calculation of Eb from the Kohn-Sham (KS) hamiltonian of the ionized impurity, but fails…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 81 (16), pp.161301(R). ⟨10.1103/PhysRevB.81.161301⟩. ⟨hal-00549021⟩

• Communication dans un congrès

Scanning confocal Raman spectroscopy of individual silicon nanowires

V.V. Strelchuk, A.S. Nikolenko, P.M. Lytvyn, A.I. Klimovskaya, Y.N. Pedchenko, A.T. Voroschenko, D. Hourlier

European Materials Research Society Spring Meeting, E-MRS Spring 2010, Symposium J : Silicon-based nanophotonics, 2010, Strasbourg, France. ⟨hal-00591742⟩

• Communication dans un congrès

Conception dun microsystème acoustique permettant la caractérisation ultrasonore haute fréquence en transmission

Assane Ndieguene, Shengxiang Wang, Julien Carlier, Pierre Campistron, Wei-Jiang Xu, Dorothée Debavelaere-Callens, Bertrand Nongaillard, Xingzhong Zhao

Lintégration de miroirs à 45° dans des substrats de silicium a permis de générer des ondes ultrasonores longitudinales ou transversales hautes fréquences, dans une direction parallèle au plan de la surface. Cette disposition permet de dissocier la face du wafer utilisée pour intégrer les éléments…

• Article dans une revue

Voltage tunable short wire-pair type of metamaterial infiltrated by nematic liquid crystal

F. Zhang, Q. Zhao, W. Zhang, J. Sun, J. Zhou, D. Lippens

Applied Physics Letters, 2010, 97, pp.134103-1-3. ⟨10.1063/1.3496034⟩. ⟨hal-00548702⟩

• Article dans une revue

A three-dimensional Monte Carlo model for the simulation of nanoelectronic devices

T. Sadi, Jean-Luc Thobel

We present a three-dimensional (3D) semi-classical ensemble Monte Carlo model newly developed to simulate a variety of nanoelectronic devices. The characteristics of the 3D model are compared with the widely used two-dimensional (2D) models. The advantages of our model, in terms of accuracy in…

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2010, 23, pp.200-214. ⟨10.1002/jnm.735⟩. ⟨hal-00549480⟩

• Article dans une revue

Optical response of resonator induced plasmon filters : nanometric diatomic structures

G.H. Cocoletzi, M.A. Palomino-Ovando, L. Dobrzynski, Bahram Djafari-Rouhani, Abdellatif Akjouj

Superlattices and Microstructures, 2010, 48, pp.380-387. ⟨10.1016/j.spmi.2010.07.011⟩. ⟨hal-00549441⟩

• Article dans une revue

High-speed programming of nanowire-gated carbon-nanotube memory devices

G. Agnus, A. Filoramo, S. Lenfant, D. Vuillaume, J.P. Bourgoin, Vincent Derycke

Small, 2010, 6, pp.2659-2663. ⟨10.1002/smll.201001293⟩. ⟨hal-00548969⟩

• Article dans une revue

The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors

C. Thelander, K.A. Dick, M.T. Borgström, L.E. Fröberg, P. Caroff, H.A. Nilsson, L. Samuelson

Nanotechnology, 2010, 21, pp.205703-1-9. ⟨10.1088/0957-4484/21/20/205703⟩. ⟨hal-00548956⟩