Publications

• Communication dans un congrès

Study on laser-induced periodic structures and photovoltaic application

R. Torres, T.E. Itina, V. Vervisch, Mathieu Halbwax, Thomas Derrien, T. Sarnet, M. Sentis, Jorge Ferreira, F. Torregrosa, L. Roux

International Symposium on High-Power Laser Ablation, HPLA 2010, 2010, United States. pp.576-581, ⟨10.1063/1.3507149⟩. ⟨hal-00568639⟩

• Communication dans un congrès

Conception dun microsystème acoustique permettant la caractérisation ultrasonore haute fréquence en transmission

Assane Ndieguene, Shengxiang Wang, Julien Carlier, Pierre Campistron, Wei-Jiang Xu, Dorothée Debavelaere-Callens, Bertrand Nongaillard, Xingzhong Zhao

Lintégration de miroirs à 45° dans des substrats de silicium a permis de générer des ondes ultrasonores longitudinales ou transversales hautes fréquences, dans une direction parallèle au plan de la surface. Cette disposition permet de dissocier la face du wafer utilisée pour intégrer les éléments…

• Communication dans un congrès

Etude expérimentale de pseudo-modes de Lamb au voisinage d'une bande interdite d'un réseau phononique

M. Bavencoffe, B. Morvan, Anne-Christine Hladky, J.L. Izbicki

10ème Congrés Français d'Acoustique, CFA 10, 2010, France. pp.1-6. ⟨hal-00572202⟩

• Communication dans un congrès

A contribution to the characterization of the interference power in cognitive radio networks

B. Pijcke, Marie Zwingelstein, Marc G. Gazalet, M Gharbi, Patrick Corlay, François-Xavier Coudoux

3rd European Wireless Technology Conference, EuWiT 2010, 2010, Ville inconnue, France. pp.137-140. ⟨hal-00550030⟩

• Communication dans un congrès

A localization technique for LOS and NLOS scenario

P. Stefanut, D.P. Gaillot, A. Nasr, M. Lienard, Pierre Degauque

3rd European Wireless Technology Conference, EuWiT 2010, 2010, France. pp.121-124. ⟨hal-00550033⟩

• Communication dans un congrès

Graphene growth by molecular beam epitaxy on the carbon face of SiC

E. Moreau, S. Godey, F.J. Ferrer, D. Vignaud, X. Wallart, J. Avila, M.C. Asensio, F. Bournel, J.J. Gallet

2nd International Symposium on the Science and Technology of Epitaxial Graphene, STEG2, 2010, Amelia Island, FL, United States. ⟨hal-00573660⟩

• Article dans une revue

Ab initio calculation of the binding energy of impurities in semiconductors : application to Si nanowires

Y.M. Niquet, L. Genovese, C. Delerue, T. Deutsch

We discuss the binding energy Eb of impurities in semiconductors within density functional theory (DFT) and the GW approximation, focusing on donors in nanowires as an example. We show that DFT succeeds in the calculation of Eb from the Kohn-Sham (KS) hamiltonian of the ionized impurity, but fails…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 81 (16), pp.161301(R). ⟨10.1103/PhysRevB.81.161301⟩. ⟨hal-00549021⟩

• Article dans une revue

Microwave modulation of terahertz quantum cascade lasers : a transmission-line approach

Wilfried Maineult, Lu Ding, Pierre Gellie, Pascal Filloux, Carlo Sirtori, Stefano Barbieri, Tahsin Akalin, Jean-Francois Lampin, Isabelle Sagnes, Harvey E. Beere, David Ritchie

We report on microwave impedance measurements of metal-metal ridge-waveguide terahertz quantum cascade lasers. Experimental data, recorded at 4 K in the 100 MHz–55 GHz range, are well reproduced by distributed-parameter transmission-line simulations, showing that the modulation cutoff is limited by…

Applied Physics Letters, 2010, 96, pp.021108-1-3. ⟨10.1063/1.3284518⟩. ⟨hal-00548728⟩

• Article dans une revue

Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon

S.R. Plissard, K.A. Dick, X. Wallart, P. Caroff

Applied Physics Letters, 2010, 96, pp.121901-1-3. ⟨10.1063/1.3367746⟩. ⟨hal-00548716⟩

• Article dans une revue

Graphene growth by molecular beam epitaxy on the carbon-face of SiC

E. Moreau, S. Godey, F.J. Ferrer, D. Vignaud, X. Wallart, J. Avila, M.C. Asensio, F. Bournel, J.J. Gallet

Graphene layers have been grown by molecular beam epitaxy (MBE) on the (0001¯) C-face of SiC and have been characterized by atomic force microscopy, low energy electron diffraction (LEED), and UV photoelectron spectroscopy. Contrary to the graphitization process, the step-terrace structure of SiC…

Applied Physics Letters, 2010, 97 (24), pp.241907. ⟨10.1063/1.3526720⟩. ⟨hal-00548720⟩