Publications

• Article dans une revue

Graphene growth by molecular beam epitaxy on the carbon-face of SiC

E. Moreau, S. Godey, F.J. Ferrer, D. Vignaud, X. Wallart, J. Avila, M.C. Asensio, F. Bournel, J.J. Gallet

Graphene layers have been grown by molecular beam epitaxy (MBE) on the (0001¯) C-face of SiC and have been characterized by atomic force microscopy, low energy electron diffraction (LEED), and UV photoelectron spectroscopy. Contrary to the graphitization process, the step-terrace structure of SiC…

Applied Physics Letters, 2010, 97 (24), pp.241907. ⟨10.1063/1.3526720⟩. ⟨hal-00548720⟩

• Communication dans un congrès

Coating metallic foams and structured reactors by VOx/TiO2 oxidation catalyst : application of RPECVD

A. Essakhi, A. Lofberg, P. Supiot, B. Mutel, S. Paul, V. Le Courtois, E. Bordes-Richard

10th International Symposium on Scientific Bases for the Preparation of Heterogeneous Catalysts, 2010, Belgium. pp.17-24, ⟨10.1016/S0167-2991(10)75003-5⟩. ⟨hal-00568965⟩

• Communication dans un congrès

Simulation de dépôt/infiltration chimique basée sur des images 3D : approche locale

W. Ros, G.L. Vignoles, C. Germain, P. Supiot

MATERIAUX 2010, Conférence pluridisciplinaire sur les matériaux, 2010, France. pp.1-4. ⟨hal-00573234⟩

• Communication dans un congrès

Pulse shaping with width randomisation for IR-UWB signal

K. Kouakou, Laurent Clavier, D. Issa, P.A. Rolland

3rd European Wireless Technology Conference, EuWiT 2010, 2010, France. pp.157-160. ⟨hal-00549930⟩

• Article dans une revue

Proposal and performance analysis of normally off n++ GaN/InAlN/AlN/GaN HEMTs with 1-nm-thick InAlN barrier

J. Kuzmik, C. Ostermaier, G. Pozzovivo, B. Basnar, W. Schrenk, J.F. Carlin, M. Gonschorek, E. Feltin, N. Grandjean, Y. Douvry, Christophe Gaquière, Jean-Claude de Jaeger, K. Cico, K. Frölich, J. Skriniarova, J. Kovacs, G. Strasser, D. Pogany, E. Gornik

IEEE Transactions on Electron Devices, 2010, 57, pp.2144-2154. ⟨10.1109/TED.2010.2055292⟩. ⟨hal-00549465⟩

• Article dans une revue

Monte Carlo study of the dynamic performance of a 100-nm-gate InAlAs/InGaAs velocity modulation transistor

B.G. Vasallo, Nicolas Wichmann, S. Bollaert, Yannick Roelens, A. Cappy, T. Gonzalez, D. Pardo, J. Mateos

IEEE Transactions on Electron Devices, 2010, 57, pp.2572-2578. ⟨10.1109/TED.2010.2058633⟩. ⟨hal-00567883⟩

• Chapitre d'ouvrage

Microstub resonators based-waveguides for filtering and multiplexing devices

Yan Pennec, Bahram Djafari-Rouhani, Abdellatif Akjouj, Jerome O. Vasseur, A. Noual, L. Dobrzynski

In this chapter, we report numerical simulations, based on a two dimensions Finite Difference Time Domain (FDTD) method, of light propagation in two-dimensional semiconductor micro optical waveguides coupled to one or several lateral stubs. This resonator offers a filtering alternative to well-…

Progress in Optical Fibers Research, Nova Science Publishers, Inc., pp.83-105, 2010, 9781606924778. ⟨hal-03526132⟩

• Article dans une revue

Voltage tunable short wire-pair type of metamaterial infiltrated by nematic liquid crystal

F. Zhang, Q. Zhao, W. Zhang, J. Sun, J. Zhou, D. Lippens

Applied Physics Letters, 2010, 97, pp.134103-1-3. ⟨10.1063/1.3496034⟩. ⟨hal-00548702⟩

• Article dans une revue

Electron beam nanolithography in AZnLOF 2020

E. Herth, P. Tilmant, M. Faucher, M. François, Christophe Boyaval, Francois Vaurette, Y. Deblock, Bernard Legrand, L. Buchaillot

Microelectronic Engineering, 2010, 87, pp.2057-2060. ⟨10.1016/j.mee.2009.12.079⟩. ⟨hal-00548989⟩

• Article dans une revue

Existence and collapse of Fano resonances as a function of pinning field in simple mono-mode magnetic circuits

Housni Al-Wahsh

We consider, in the frame of long-wavelength Heisenberg model, the effect of a pinning field on the spin wave band gaps and transmission spectra of a simple magnonic device. This simple device is composed of an infinite one dimensional (1D) monomode waveguide (the backbone) along which N (N’) side…

The European Physical Journal B: Condensed Matter and Complex Systems, 2010, 73, pp.527-537. ⟨10.1140/epjb/e2010-00032-7⟩. ⟨hal-00549069⟩