Publications

• Communication dans un congrès

InAlN/GaN heterostructures for microwave power and beyond

E. Kohn, M. Alomari, A. Denisenko, M. Dipalo, D. Maier, F Medjdoub, C. Pietzka, S. Delage, M.A. Di Forte-Poisson, E. Morvan, N. Sarazin, J.C. Jacquet, C. Dua, J.F. Carlin, N. Grandjean, M. Py, M. Gonschorek, J. Kuzmik, D. Pogany, G. Pozzovivo, C. Ostermaier, L. Toth, B. Pecz, Jean-Claude de Jaeger, Christophe Gaquière, K. Cico, K. Fröhlich, A. Kermaidis, E. Iliopoulos, G. Konstantinidis, C. Giessen, M. Heuken, B. Schineller

International Electron Devices Meeting, IEDM 2009, 2009, United States. pp.1-4, ⟨10.1109/IEDM.2009.5424395⟩. ⟨hal-00474463⟩

• Communication dans un congrès

Terahertz plasmonic antennas for quantum cascade lasers

Tahsin Akalin, Wilfried Maineult, Pierre Gellie, Emilien Peytavit, Alessio Andronico, Pascal Filloux, Giuseppe Leo, Jean-Francois Lampin, Carlo Sirtori, Harvey E. Beere, David Ritchie, Stefano Barbieri

Quantum Cascade Lasers (QCL) are probably the most promising sources for Terahertz wave generation. The key issue especially for double metal QCLs is the extraction and the beam shaping of the emitted power. We propose a solution with a TEM-Horn Antenna and we compare it to the most recently…

Asia Pacific Microwave Conference, APMC 2009, Dec 2009, Singapour, Singapore. pp.183-185, ⟨10.1109/APMC.2009.5385404⟩. ⟨hal-00474429⟩

• Communication dans un congrès

A 60GHz 65nm CMOS RMS power detector for antenna impedance mismatch detection

J. Gorisse, A. Cathelin, A. Kaiser, E. Kerhervé

35th European Solid-State Circuits Conference, ESSCIRC 2009, 2009, Greece. pp.172-175, ⟨10.1109/ESSCIRC.2009.5326027⟩. ⟨hal-00474432⟩

• Communication dans un congrès

Thermoelastic FEM-BEM model for MEMS resonator simulation

D. Ekeom, L. Buchaillot

22nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2009, 2009, Italy. pp.923-926, ⟨10.1109/MEMSYS.2009.4805535⟩. ⟨hal-00474450⟩

• Communication dans un congrès

Improvement of the RF power performance of nLDMOSFETs on bulk and SOI substrates with 'ribbon' gate and source contacts layouts

D. Fournier, D. Ducatteau, Julien Fontaine, P. Scheer, O. Bon, B. Rauber, M. Buczko, D. Gloria, Christophe Gaquière, P. Chevalier

21st International Symposium on Power Semiconductor Devices ans ICs, ISPSD'09, 2009, Spain. pp.116-119, ⟨10.1109/ISPSD.2009.5158015⟩. ⟨hal-00474496⟩

• Communication dans un congrès

Physical-thermal modelling of GaN Gunn oscillations

Xing Tang, Michel Rousseau, Jean-Claude de Jaeger

4th European Microwave Integrated Circuits Conference, EuMIC 2009, 2009, Italy. pp.168-171. ⟨hal-00474493⟩

• Communication dans un congrès

Fabrication of GHz range oscillators stabilized by nano-carbon-diamond-based surface acoustic resonators

R. Salut, S. Ballandras, C. Gesset, S. Saada, P. Bergonzo, V. Yantchev, I. Kartadjiev, B. Assouar, O. Elmazria, F. Benedic, F. Omnes, V. Edon, Denis Remiens

IEEE International Ultrasonics Symposium, 2009, Italy. pp.927-930, ⟨10.1109/ULTSYM.2009.5441638⟩. ⟨hal-00474524⟩

• Article dans une revue

UHV fabrication of the ytterbium silicide as potential low schottky barrier S/D contact material for N-type MOSFET

Dmitri Yarekha, G. Larrieu, N. Breil, Emmanuel Dubois, S. Godey, X. Wallart, Caroline Soyer, Denis Remiens, N. Reckinger, Xing Tang, A. Laszcz, J. Ratajczak, A. Halimaoui

ECS Transactions, 2009, 19, pp.339-344. ⟨10.1149/1.3118961⟩. ⟨hal-00471999⟩

• Article dans une revue

Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs

G. Larrieu, Dmitri Yarekha, Emmanuel Dubois, D. Deresmes, N. Breil, N. Reckinger, Xing Tang, A. Halimaoui

The paper focuses on specific issues associated to rare earth silicide integration on UTB-SOI substrate with a particular attention to erbium and ytterbium silicides. Due to the limited Si source, defects generation on SOI is prevented compared to bulk substrate. Reaction of RE with dielectric…

ECS Transactions, 2009, 19 (4), pp.201-207. ⟨10.1149/1.3117410⟩. ⟨hal-00471998⟩

• Article dans une revue

Fabrication and fundamentals of operation of an InAlAs/InGaAs velocity modulation transistor

Nicolas Wichmann, B.G. Vasallo, S. Bollaert, Yannick Roelens, X. Wallart, A. Cappy, T. Gonzalez, D. Pardo, J. Mateos

Applied Physics Letters, 2009, 94, pp.103504-1-3. ⟨10.1063/1.3095482⟩. ⟨hal-00469682⟩