Publications

• Communication dans un congrès

Microwave power performance on AlGaN/GaN HEMTs on composite substrate

Jean-Claude de Jaeger, Virginie Hoel, N. Defrance, Y. Douvry, Christophe Gaquière, M.A. Poisson, J. Thorpe, H. Lahreche, R. Langer

4th European Microwave Integrated Circuits Conference, EuMIC 2009, 2009, Italy. pp.144-147. ⟨hal-00474461⟩

• Communication dans un congrès

Electrode sizing for guided wave resonator above a Bragg mirror

I. Kone, A. Reinhardt, F. Domingue, Bertrand Dubus, L. Buchaillot, F. Casset, J.F. Carpentier, M. Aid

63rd IEEE International Frequency Control Symposium, joint with 23rd European Frequency and Time Forum, EFTF-IFCS 2009, 2009, France. pp.904-907, ⟨10.1109/FREQ.2009.5168318⟩. ⟨hal-00474071⟩

• Article dans une revue

Three-dimensional Monte Carlo study of three-terminal junctions based on InGaAs/InAlAs heterostructures

T. Sadi, F. Dessenne, Jean-Luc Thobel

We apply a three-dimensional (3D) semiclassical ensemble Monte Carlo simulation method to study T-branch junctions based on InGaAs/InAlAs heterostructures and obtain an accurate insight into the physics behind the operation of such structures. Electron transport in these devices is investigated and…

Journal of Applied Physics, 2009, 105 (5), pp.0537075. ⟨10.1063/1.3087703⟩. ⟨hal-00473651⟩

• Article dans une revue

Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures

A.M. Kurakin, S.A. Vitusevich, S.V. Danylyuk, H. Hardtdegen, N. Klein, Z. Bougrioua, A.V. Naumov, A.E. Belyaev

Journal of Applied Physics, 2009, 105, pp.073703-1-6. ⟨10.1063/1.3100206⟩. ⟨hal-00472679⟩

• Article dans une revue

Defect modes in one-dimensional anisotropic photonic crystal

Noama Ouchani, Driss Bria, Bahram Djafari-Rouhani, Abdlekarim Nougaoui

We theoretically analyze the defect states in a single-defect photonic crystal composed of anisotropic dielectric materials. This structure can trap light of a given frequency range and filter only a certain frequency light. It is shown that the defect modes appear as peaks in the transmission…

Journal of Applied Physics, 2009, 106 (11), pp.113107. ⟨10.1063/1.3266005⟩. ⟨hal-00473077⟩

• Article dans une revue

A simple method for measuring Si-Fin sidewall roughness by AFM

X.H. Tang, V. Bayot, N. Reckinger, D. Flandre, J.P. Raskin, Emmanuel Dubois, B. Nysten

The gate oxide reliability and the electrical behavior of FinFETs are directly related to the surface characteristics of the fin vertical sidewalls. The surface roughness of the fin sidewalls is one of the most important structural parameters to be monitoredin order to optimize the fin patterning…

IEEE Transactions on Nanotechnology, 2009, 8, pp.611-616. ⟨10.1109/TNANO.2009.2021064⟩. ⟨hal-00471972⟩

• Article dans une revue

Extension of the "equivalent cable bundle method" for modeling electromagnetic emissions of complex cable bundles

Guillaume Andrieu, Alain Reineix, X. Bunlon, J.P. Parmantier, L. Kone, B. Demoulin

IEEE Transactions on Electromagnetic Compatibility, 2009, 51, pp.108-118. ⟨10.1109/TEMC.2008.2007803⟩. ⟨hal-00473686⟩

• Article dans une revue

Coupled analysis of high and low frequency resonant ultrasound spectroscopy : application to the detection of defects in ceramic balls

F. Deneuville, Marc Duquennoy, Mohammadi Ouaftouh, Frédéric Jenot, Mohamed Ourak, S. Desvaux

Review of Scientific Instruments, 2009, 80, pp.054903-1-6. ⟨10.1063/1.3142462⟩. ⟨hal-00473705⟩

• Article dans une revue

Applicability of acoustic noise correlation for structural health monitoring in nondiffuse field conditions

Emmanuel Moulin, Najib Abou Leyla, Jamal Assaad, Sébastien Grondel

Ambient noise correlation offers an elegant way of passively caracterize a medium. The principle is that in diffuse field condition, Green’s function between two sensors can be retrieved from the cross-correlated received signals. Here, the technique is applied in conditions where convergence…

Applied Physics Letters, 2009, 95, pp.094104-1-3. ⟨10.1063/1.3200240⟩. ⟨hal-00473707⟩

• Communication dans un congrès

Investigaton on fabrication of GaAsSb/InP UTC-PD based photomixer operating at 1.55 µm wavelengths

Alexandre Beck, Olivier Offranc, Mohammed Zaknoune, Emilien Peytavit, Guillaume Ducournau, Tahsin Akalin, X. Wallart, Jean-Francois Lampin

We report our investigation on realization of 1.55 mum wavelengths sensitive photomixer based on GaAsSb/InP uni-travelling-carrier photodiode. The epitaxial structure and technological steps are described.

34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009, Sep 2009, Busan, South Korea. pp.1-2, ⟨10.1109/ICIMW.2009.5324658⟩. ⟨hal-00474427⟩