Publications

• ART

Use of the circuit approach to solve large EMC problems

S. Leman, B. Demoulin, O. Maurice, M. Cauterman, P. Hoffmann

Comptes Rendus. Physique, 2009, 10, pp.70-82. ⟨10.1016/j.crhy.2009.01.006⟩. ⟨hal-00473696⟩

• ART

MMICs time-domain electrical physical simulator adapted to the parallel computation

A. El Moussati, Jean-Claude de Jaeger, Christophe Dalle

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2009, 22, pp.279-296. ⟨10.1002/jnm.706⟩. ⟨hal-00473652⟩

• ART

Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Yvon Cordier, Fabrice Semond, Jean-Christophe Moreno, Éric Frayssinet, Brahim Benbakhti, Z. Cao, Sébastien Chenot, Lee Nguyen, Olivier Tottereau, Ali Soltani, Karine Blary

In this work, we describe the main features of selective area growth (SAG) of GaN by molecular beam epitaxy (MBE) using ammonia. Different schemes such as growth into micrometer and nanometer size windows in Si3N4 dielectric masks and mesa structures etched on GaN or Silicon substrate are studied.

Materials Science in Semiconductor Processing, 2009, 12, pp.16-20. ⟨10.1016/j.mssp.2009.07.003⟩. ⟨hal-00473644⟩

• ART

Parallel interference cancellation in DS-CDMA optical networks using bias compensation

A. Okassa M'Foubat, Iyad Dayoub, Jean-Michel Rouvaen, Y. Zouine

European Transactions on Telecommunications, 2009, 20, pp.564-571. ⟨10.1002/ett.1358⟩. ⟨hal-00471835⟩

• ART

The inter-modes mixing effects in mode group diversity multiplexing

M. Awad, Iyad Dayoub, A. Okassa M'Foubat, Jean-Michel Rouvaen

Optics Communications, 2009, 282, pp.3908-3917. ⟨10.1016/j.optcom.2009.06.065⟩. ⟨hal-00471836⟩

• ART

CO2 laser-induced crystallization of sol-gel-derived indium tin oxide films

X.Y. Tao, I. Fsaifes, V. Koncar, C. Dufour, C. Lepers, L. Hay, B. Capoen, M. Bouazaoui

Applied physics. A, Materials science & processing, 2009, 96, pp.741-749. ⟨10.1007/s00339-009-5157-7⟩. ⟨hal-00472769⟩

• ART

(6 x 2) Reconstruction of the Ag/Si(111) surface at 77 K (vol 603, pg 311, 2009) - Corrigendum

A. Urbieta, K. Schulte, B. Grandidier, D. Deresmes, S.C. Erwin, D. Stievenard

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2009, 603, pp.1079-1079. ⟨10.1016/j.susc.2009.02.002⟩. ⟨hal-00473064⟩

• ART

Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators

M. Faucher, B. Grimbert, Y. Cordier, N. Baron, A. Wilk, H. Lahreche, P. Bove, M. Francois, P. Tilmant, T. Gehin, C. Legrand, M. Werquin, L. Buchaillot, Christophe Gaquière, D. Theron

Applied Physics Letters, 2009, 94, pp.233506-1-3. ⟨10.1063/1.3153504⟩. ⟨hal-00472724⟩

• COMM

Amplification of nanoscale motion by piezoelectric transduction in GaN resonators

M. Faucher, B. Grimbert, Y. Cordier, N. Baron, A. Wilk, H. Lahreche, P. Bove, M. François, P. Tilmant, T. Gehin, C. Legrand, M. Werquin, L. Buchaillot, Christophe Gaquière, D. Theron

18th European Workshop on Heterostructure Technology, HeTech 2009, 2009, Günzburg-Ulm, Germany. ⟨hal-00810577⟩

• ART

Ultra-sensitive capacitive detection based on SGMOSFET compatible with front-end CMOS process

E. Colinet, C. Durand, L. Duraffourg, P. Audebert, G. Dumas, F. Casset, E. Ollier, P. Ancey, J.F. Carpentier, L. Buchaillot, A.M. Ionescu

IEEE Journal of Solid-State Circuits, 2009, 44, pp.247-257. ⟨10.1109/JSSC.2008.2007448⟩. ⟨hal-00472755⟩