Publications

• ART

Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain

M. Borg, E. Lefebvre, M. Malmkvist, L. Desplanque, X. Wallart, Yannick Roelens, Gilles Dambrine, A. Cappy, S. Bollaert, J. Grahn

Solid-State Electronics, 2008, 52, pp.775-781. ⟨10.1016/j.sse.2007.12.002⟩. ⟨hal-00356942⟩

• ART

Magnesium diffusion profile in GaN grown by MOVPE

Z. Benzarti, I. Halidou, Z. Bougrioua, T. Boufaden, B. El Jani

Journal of Crystal Growth, 2008, 310, pp.3274-3277. ⟨10.1016/j.jcrysgro.2008.04.008⟩. ⟨hal-00356993⟩

• ART

Plasma oscillations in nanotransistors for room temperature detection and emission of terahertz radiation

A. El Fatimy, R. Tauk, S. Boubanga, F. Teppe, N. Dyakonova, W. Knap, J. Lyonnet, Y.M. Meziani, T. Otsuji, M.A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Yannick Roelens, Didier Theron, A. Cappy, Christophe Gaquière

Physica Status Solidi C: Current Topics in Solid State Physics, 2008, 5, pp.244-248. ⟨10.1002/pssc.200776585⟩. ⟨hal-00360007⟩

• ART

Growth and structural characterization of cerium oxide thin films realized on Si(111) substrates by on-axis r.f. magnetron sputtering

M.T. Ta, D. Briand, Y. Guhel, J. Bernard, J.C. Pesant, B. Boudart

Thin Solid Films, 2008, 517, pp.450-452. ⟨10.1016/j.tsf.2008.08.059⟩. ⟨hal-00360032⟩

• ART

New developments on diamond photodetector for VUV solar observations

Ali Benmoussa, Ali Soltani, Ken Haenen, Udo Kroth, Vincent Mortet, Hassan Ali Barkad, David Bolsée, Christian Hermans, M. Richter, Jean-Claude de Jaeger, Jean-François Hochedez

A new large-size metal–semiconductor–metal photoconductor device of 4.6 mm in diameter based on diamond material has been reprocessed and characterized in the vacuum-ultraviolet (VUV) wavelength range. The metal finger contacts have been processed to 2 µm in width with spacing between the contacts…

Semiconductor Science and Technology, 2008, 23 (3), pp.035026. ⟨10.1088/0268-1242/23/3/035026⟩. ⟨hal-00357795⟩

• ART

Counting statistics of single electron transport in a semiconductor quantum dot

S. Gustavsson, R. Leturcq, B. Simovic, R. Schleser, T. Ihn, P. Studerus, K. Ensslin, D.C. Driscoll, A.C. Gossard

Advances in Solid State Physics, 2008, 46, pp.31-43. ⟨10.1007/978-3-540-38235-5_3⟩. ⟨hal-00357788⟩

• ART

Electrochemical impedance spectroscopy and surface plasmon resonance studies of DNA hybridization on gold/SiO_<i>x</i> interfaces

Maël Manesse, Valérie Stambouli, Rabah Boukherroub, Sabine Szunerits

The use of Au/SiO_<i>x</i> interfaces for the investigation of DNA hybridization using electrochemical impedance spectroscopy (EIS) and surface plasmon resonance (SPR) simultaneously is demonstrated. Standard glass chemistry was used to link single-stranded DNA (ss…

• COMM

Single carbon nanotube at GHz frequency

Julien Chaste, Lorentz Lechner, Pascal Morfin, Gwendal Fève, Takis Kontos, Jean-Marc Berroir, Christian D.C. Glattli, Henri Happy, Perti Hakonen, Bernard Plaçais

International Conference on the Science and Application of Nanotubes (NT08), 2008, Montpellier, France. ⟨hal-00289768⟩

• ART

A Monte Carlo investigation of carrier transport in fabricated back-to-back Schottky diodes : influence of direct quantum tunnelling and temperature

E. Pascual, R. Rengel, N. Reckinger, Xing Tang, V. Bayot, Emmanuel Dubois, M.J. Martin

In this paper we present a Monte Carlo investigation of charge transport-including quantum tunnelling effects in fabricated back-to-back n-type Schottky barriers in the reverse bias regime. The effect of the variation of the temperature over the current density and over different internal…

Physica Status Solidi C: Current Topics in Solid State Physics, 2008, 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCTS‐15), 5 (1), pp.119-122. ⟨10.1002/pssc.200776519⟩. ⟨hal-04710009⟩

• ART

1.55 µm GaAs/GaNAsSb/GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy

Kianhuan Tan, Soon Fatt Yoon, Wan Khai Loke, Satrio Wicaksono, Zhichuan Xu, Tien Khee Ng, Kim Luong Lew, N. Saadsaoud, Malek Zegaoui, Didier Decoster, Jean Chazelas

We demonstrate a 1.55 μm GaAsGaNAsSbGaAs optical waveguide grown by molecular beam epitaxy as an alternative to the AlGaAsGaAs system. The 0.4-μm -thick GaNAsSb guiding layer contains ∼3.5% of N and 9% of Sb, resulting in optical band gap of 0.88 eV. The refractive index of the GaNAsSb layer was…

Applied Physics Letters, 2008, 92 (11), pp.113513-1-3. ⟨10.1063/1.2898507⟩. ⟨hal-00357300⟩