Publications

• ART

Study of the fundamental Lamb modes interaction with symmetrical notches

Farouk Benmeddour, Sébastien Grondel, Jamal Assaad, Emmanuel Moulin

NDT & E International, 2008, 41, pp.1-9. ⟨10.1016/j.ndteint.2007.07.001⟩. ⟨hal-00360324⟩

• ART

Characterization of nanogap chemical reactivity using peptide-capped gold nanoparticles and electrical detection

L. Marcon, D. Stievenard, O. Melnyk

Bioconjugate Chemistry, 2008, 19, pp.802-805. ⟨10.1021/bc8000084⟩. ⟨hal-00357336⟩

• ART

Structural and electrical properties of Au and Ti/Au contacts to n-type GaN

L. Dobos, B. Pecz, L. Toth, Z.J. Horvath, Z.E. Horvath, B. Beaumont, Z. Bougrioua

Vacuum, 2008, 82, pp.794-798. ⟨10.1016/j.vacuum.2007.11.005⟩. ⟨hal-00356985⟩

• ART

Multilevel modeling of the influence of surface transport peculiarities on growth, shaping, and doping of Si nanowires

A. Efremov, A. Klimovskaya, I. Prokopenko, Y. Moklyak, D. Hourlier

Physica E: Low-dimensional Systems and Nanostructures, 2008, 40, pp.2446-2453. ⟨10.1016/j.physe.2008.01.015⟩. ⟨hal-00356959⟩

• ART

Chemical and physical characterization of LaNiO3 thin films deposited by sputtering for top and bottom electrodes in ferroelectric structure

M. Detalle, Denis Remiens

Journal of Crystal Growth, 2008, 310, pp.3596-3603. ⟨10.1016/j.jcrysgro.2008.04.053⟩. ⟨hal-00360097⟩

• ART

Effects of annealing temperature and heat-treatment duration on electrical properties of sol–gel derived indium-tin-oxide thin films

Arnaud Beaurain, D. Luxembourg, C. Dufour, Vladan Koncar, Bruno Capoen, Mohamed Bouazaoui

Transparent indium tin oxide (ITO) thin films have been deposited by the dip-coating process on silica substrates using solutions of 2,4-pentanedione, ethanol, indium and tin salts. The films have been first dried in air at 260 °C for 10 min and then annealed in a reducing atmosphere at different…

Thin Solid Films, 2008, 516, pp.4102-4106. ⟨10.1016/j.tsf.2007.10.021⟩. ⟨hal-00357288⟩

• ART

Self-assembly of the 3-aminopropyltrimethoxysilane multilayers on Si and hysteretic current-voltage characteristics

A.K. Chauhan, D.K. Aswal, S.P. Koiry, S.K. Gupta, J.V. Yakhmi, C. Sürgers, David Guérin, S. Lenfant, D. Vuillaume

Applied physics. A, Materials science & processing, 2008, 90, pp.581-589. ⟨10.1007/s00339-007-4336-7⟩. ⟨hal-00357287⟩

• ART

Mosaicity and stress effects on luminescence properties of GaN

A. Toure, A. Bchetnia, T.A. Lafford, Z. Benzarti, I. Halidou, Z. Bougrioua, B. El Jani

Physica Status Solidi A (applications and materials science), 2008, 205, pp.2042-2046. ⟨10.1002/pssa.200778869⟩. ⟨hal-00357274⟩

• ART

Integration of PtSi in p-type MOSFETs using a sacrificial low-temperature germanidation process

Nicolas Breil, Emmanuel Dubois, Aomar Halimaoui, Arnaud Pouydebasque, Guilhem Larrieu, Adam Laszcz, J. Ratajcak, Thomas Skotnicki

In this letter, an original selective etching method of Pt with respect to PtSi using a sacrificial low-temperature germanidation process is used for the integration of valence band edge contacts in p-type MOSFET devices. After silicidation annealing, the excess of Pt due to incomplete reaction…

IEEE Electron Device Letters, 2008, 29, pp.152-154. ⟨10.1109/LED.2007.914090⟩. ⟨hal-00356971⟩

• ART

Tight-binding description of the quasiparticle dispersion of graphite and few-layer graphene

A. Grüneis, Claudio Attaccalite, L. Wirtz, H. Shiozawa, R. Saito, T. Pichler, A. Rubio

A universal set of third–nearest neighbour tight–binding (TB) parameters is presented for calculation of the quasiparticle (QP) dispersion of N stacked sp2 graphene layers (N = 1 . . . ∞) with AB stacking sequence. The QP bands are strongly renormalized by electron–electron interactions which…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 78, pp.205425-1-16. ⟨10.1103/PhysRevB.78.205425⟩. ⟨hal-00357778⟩