Publications

• Communication dans un congrès

Individual carbon nanotube as electrodes for molecular electronics

G. Robert, F. Moggia, N. Lidgi-Guigui, S. Streiff, A. Filoramo, S. Campidelli, M.G. Goffman, Bruno Jousselme, Serge Palacin, S. Lenfant, D. Vuillaume, J.P. Bourgoin, Vincent Derycke

4th International Meeting on Molecular Electronics, ElecMol'08, 2008, Grenoble, France. ⟨hal-00361612⟩

• Article dans une revue

193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors

Ali Soltani, Hassan Ali Barkad, Maghnia Mattalah, Brahim Benbakhti, Jean-Claude de Jaeger, Y.M. Chong, Y.S. Zou, W.J. Zhang, S.T. Lee, Ali Benmoussa, B. Giordanengo, Jean-François Hochedez

Applied Physics Letters, 2008, 92 (5), pp.053501. ⟨10.1063/1.2840178⟩. ⟨hal-00357793⟩

• Article dans une revue

Piezoelectric response of PZT nanostructures obtained by focused ion beam

Denis Remiens, Liang Ruihong, David Troadec, D. Deresmes, Caroline Soyer, Antonio Da Costa, Rachel Desfeux

Pb(Zrx,Ti1 - x)O3 (PZT) microscale island (1μm∼ 100nm) was fabricated by Focused Ion Beam (FIB) before and after its crystallization. In the first case the FIB etching is realized on amorphous films and a post annealing treatment, at the crystallization temperature of the PZT films, is necessary to…

Integrated Ferroelectrics, 2008, 100 (1), pp.16-25. ⟨10.1080/10584580802540173⟩. ⟨hal-00800679⟩

• Article dans une revue

Delay spread and coherence bandwidth in a reverberation chamber

O. Delangre, P. de Doncker, M. Lienard, Pierre Degauque

Electronics Letters, 2008, 44, pp.328-329. ⟨10.1049/el:20083676⟩. ⟨hal-00360046⟩

• Article dans une revue

Nonquasi-static large-signal model of GaN FETs through an equivalent voltage approach

Alberto Santarelli, Valeria Di Giacomo, Antonio Raffo, Fabio Filicori, Giorgio Vannini, Raphaël Aubry, Christophe Gaquière

A new empirical nonlinear model of GaN-based electron devices is presented in the article. The model takes into account low-frequency dispersion due to self-heating and charge-trapping phenomena and provides accurate predictions at frequencies where nonquasi-static effects are important. The model…

International Journal of RF and Microwave Computer-Aided Engineering, 2008, 18, pp.507-516. ⟨10.1002/mmce.20326⟩. ⟨hal-00357800⟩

• Article dans une revue

Electromagnetic compatibility analysis of unstructured mains networks for high-speed data transmission : part 2

S. Battermann, H. Garbe, F. Silva, M. Pous, V. Beauvois, K. Vantomme, J. Catrysse, J. Newbury, Virginie Degardin, M. Liénard, Pierre Degauque, I.D. Flintoft, A.D. Papatsoris, D.W. Welsh, A.C. Marvin

IET Science Measurement and Technology, 2008, 2, pp.154-159. ⟨10.1049/iet-smt:20070056⟩. ⟨hal-00360049⟩

• Article dans une revue

Investigation on the emission wavelength of GaInNAs/GaAs strained compressive quantum wells on GaAs substrates

Abdelkader Aissat, Said Nacer, Messaoud Bensebti, Jean-Pierre Vilcot

In this paper, we study the effect of the incorporation of nitrogen in strained GaInAs quantum well structures. We evaluate the influence of nitrogen on the conduction band energy by using the band anticrossing model. The incorporation of nitrogen appears to decrease the bandgap energy and increase…

Microelectronics Journal, 2008, 39, pp.63-66. ⟨10.1016/j.mejo.2007.10.014⟩. ⟨hal-00357304⟩

• Article dans une revue

Crosstalk measurement of DOS-like switch using InP narrow deep-etched waveguides

Marie Lesecq, Maxime Beaugeois, Sophie Maricot, Jean-Pierre Vilcot

We report on the performance of an optical switch based on the use of narrow deep-etched InP waveguides. A DOS-like structure has been designed and fabricated. First characterization results are reported. They show an optical crosstalk value close to -20dB.

Optics Express, 2008, 16, pp.5181-5185. ⟨10.1364/OE.16.005181⟩. ⟨hal-00357303⟩

• Communication dans un congrès

An organic-nanoparticle transistor behaving as a spiking synapse

F. Alibart, Christophe Novembre, David Guérin, Stéphane Pleutin, K. Lmimouni, Christian Gamrat, Dominique Vuillaume

9th International Conference on Molecular Electronics, Molecular Electronics IX, 2008, Kauai, HI, United States. ⟨hal-00361581⟩

• Article dans une revue

Evidence of electron-phonon interaction on transport in n- and p-type silicon nanowires

Francois Vaurette, R. Leturcq, J.P. Nys, D. Deresmes, B. Grandidier, D. Stievenard

Applied Physics Letters, 2008, 92, pp.242109-1-3. ⟨10.1063/1.2949072⟩. ⟨hal-00357349⟩