Publications

• Communication dans un congrès

Etude de structures du type couche sur substrat par laser ultrasons

M. Lemaire, Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy, Mohamed Ourak

Journées Ultrasons Laser, 2006, Le Mans, France. ⟨hal-00147743⟩

• Article dans une revue

Investigation of the Optical Properties of epitaxial-lateral-overgrown GaN on R- and M- plane Sapphire

Tobias Guhne, Zahia Bougrioua, Martin Albrecht, Phillippe Vennéguès, Mathieu Leroux, Marguerite Laügt, Sosse Ndiaye, Monique Teisseire, Luan Nguyen, Pierre Gibart

Optical properties of GaN templates grown by the Epitaxial Lateral Overgrowth (ELO) technique along the nonpolar (1120) and the semipolar (1122) directions on R- and M-sapphire were investigated. Spatially resolved Cathodoluminescence (CL) was carried out in order to identify defect related…

MRS Online Proceedings Library, 2006, 955, ⟨10.1557/PROC-0955-I12-04⟩. ⟨hal-02906702⟩

• Communication dans un congrès

Continuous wave THz generation based on a dual-frequency laser and a LTG - InGaAs photomixer

R. Czarny, M. Alouini, X. Marcadet, S. Bansropun, J.L. Doualan, R. Moncorge, Jean-Francois Lampin, M. Krakowski, D. Dolfi

International Topical Meeting on Microwaves Photonics, 2006, France. pp.290-292, ⟨10.1109/MWP.2006.346534⟩. ⟨hal-00247427⟩

• Article dans une revue

Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer ingaas transistors

F. Teppe, M. Orlov, A.E. Fatimy, A. Tiberj, W. Knap, J. Torres, V. Gavrilenko, A. Shchepetov, Yannick Roelens, S. Bollaert

Applied Physics Letters, 2006, 89 (22), pp.222109.1-222109.3. ⟨10.1063/1.2392999⟩. ⟨hal-00329604⟩

• Article dans une revue

High temperature pulsed measurements of AlGaN/GaN HEMTs on high resistive Si(111) substrate

Matthieu Werquin, Damien Ducatteau, Nicolas Vellas, E. Delos, Yvon Cordier, Raphaël Aubry, Christophe Gaquière

DC- and RF-pulsed measurements of AlGaN/GaN HEMTs on high resistive silicon (111) substrate are achieved under probes in the 300–525 K temperature range. Current collapse and heating effects are studied and it demonstrates the high temperature properties of these devices. Hence the potential of…

Microwave and Optical Technology Letters, 2006, 48, pp.2303-2305. ⟨10.1002/mop.21897⟩. ⟨hal-00154928⟩

• Article dans une revue

Tunable rectification and slope reversals in the I-V characteristics of ballistic nanojunctions

B. Hackens, L. Gence, S. Faniel, C. Gustin, X. Wallart, S. Bollaert, A. Cappy, V. Bayot

Physica E: Low-dimensional Systems and Nanostructures, 2006, 34, pp.515-518. ⟨hal-00154922⟩

• Communication dans un congrès

A new digital receiver architecture for direction finding systems

V.Y. Vu, A. Benlarbi-Delaï

1st International Conference on Communications and Electronics, HUT-ICCE 2006, 2006, Vietnam. pp.430-433, ⟨10.1109/CCE.2006.350863⟩. ⟨hal-00241354⟩

• Article dans une revue

Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valusis, A. Shchepetov, Yannick Roelens, S. Bollaert, A. Cappy, S. Rumyantsev

Applied Physics Letters, 2006, 89, pp.131926-1-3. ⟨hal-00154920⟩

• Communication dans un congrès

Metamaterial-based devices at millimetre and sub-millimetre wavelengths

D. Lippens

2006, 4 pp. ⟨hal-00152963⟩

• Communication dans un congrès

Dynamic response of carbon nanotube field-effect transistors in the GHz range

Jean-Marc Bethoux, Henri Happy, Gilles Dambrine, Vincent Derycke, M. F. Goffman, Jean-Philippe Bourgoin

Proceedings of the Third Meeting on Molecular Electronics, ElecMol'06, 2006, Grenoble, France. ⟨hal-00241345⟩