Publications

• Communication dans un congrès

Ultrasonics assessment of draining kinetic and adhesion phenomenon during cheese manufacture

Georges Nassar, M.N. Sabra, Fabrice Lefebvre, Malika Toubal, Bertrand Nongaillard, Y. Noel

2006, pp.327-328. ⟨hal-00138736⟩

• Communication dans un congrès

Directed assembly for carbon nanotube device fabrication

Jean-Philippe Bourgoin, Jean-Sébastien Borghetti, Pascale Chenevier, Vincent Derycke, Arianna Filoramo, Ludovic Goux, M. F. Goffman, Sébastien Lyonnais, K. Nguyen, G. Robert, S. Streiff, Jean-Marc Bethoux, Henri Happy, Gilles Dambrine, Stéphane Lenfant, Dominique Vuillaume

Chemically and biochemically-directed assembly of nanotubes (NT) for electronics is reviewed. Examples of new field-effect devices prepared this way either for high frequency (40GHz) operation or for applications to an optoelectronics multilevel memory are presented. A route towards (bio)molecular…

International Electron Devices Meeting, IEDM 2006, Dec 2006, San Francisco, CA, United States. ⟨10.1109/IEDM.2006.346805⟩. ⟨hal-00128199⟩

• Communication dans un congrès

Composants photoniques passifs en technologie microguide sur InP : conception, fabrication et caracterisation

Marie Lesecq, Sophie Maricot, Jean-Pierre Vilcot

11èmes Journées Nano-Micro Electronique et Optoélectronique, JNMO 2006, 2006, Aussois, France. ⟨hal-00130874⟩

• Article dans une revue

Diffusion of boron in silicon : compatibility of empirical molecular dynamics with continuum simulations

Valérie Cuny, Quentin Brulin, Evelyne Lampin, Emmanuel Lecat, Christophe Krzeminski, Fabrizio Cleri

The compatibility of atomistic simulations with continuum methods is tested by applying empirical molecular dynamics to the diffusion of a boron dopant atom in silicon. Extended timescale simulations of the diffusion path are performed. The analysis of the position of boron during the migration…

EPL - Europhysics Letters, 2006, 76 (5), pp.842-848. ⟨10.1209/epl/i2006-10334-y⟩. ⟨hal-00127828⟩

• Article dans une revue

Comment on : Electrostatics of individual single-walled carbon nanotubes investigated by electrostatic force microscopy

M. Zdrojek, Thierry Melin, H. Diesinger, D. Stievenard, W. Gebicki, L. Adamowicz

Physical Review Letters, 2006, 96, pp.039703. ⟨hal-00127821⟩

• Communication dans un congrès

Communication over vehicular DC lines : propagation channel characteristics

M. Carrion, M. Lienard, Pierre Degauque

2006, pp.2-5. ⟨hal-00140181⟩

• Article dans une revue

Plateforme saw dédiée à la microfluidique discrète pour applications biologiques

A. Renaudin, P. Tabourier, V. Zhang, C. Druon, J.C. Camart

La Houille Blanche - Revue internationale de l'eau, 2006, 3, pp.26-30. ⟨hal-00127823⟩

• Article dans une revue

Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices

Colleen Marlow, Richard Taylor, Theodore P. Martin, B.C. Scannell, H. Linke, M.S. Fairbanks, Gavin D.R. Hall, Ivan Shorubalko, Lars Samuelson, T.M. Fromhold, Carl Brown, Benoit Hackens, Sébastien Faniel, Cédric Gustin, Vincent Bayot, X. Wallart, S. Bollaert, A. Cappy

We present an experimental comparison of magnetoconductance fluctuations measured in the ballistic, quasiballistic, and diffusive scattering regimes of semiconductor devices. In contradiction to expectations, we show that the spectral content of the magnetoconductance fluctuations exhibits an…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 73, pp.195318-1-7. ⟨10.1103/PhysRevB.73.195318⟩. ⟨hal-00126523⟩

• Article dans une revue

A Monte Carlo investigation of the RF performance of partially-depleted SOI MOSFETs

R. Rengel, M.J. Martin, Gilles Dambrine, Francois Danneville

Semiconductor Science and Technology, 2006, 21, pp.273-278. ⟨hal-00126522⟩

• Article dans une revue

GaAs/polymer optical nanowires : fabrication and characterisation

D. Lauvernier, Sophie Garidel, Malek Zegaoui, Jean-Pierre Vilcot, Didier Decoster

The fabrication and propagation loss measurement of GaAs/polymer optical nanowires are reported. Their design consists of a 300×300 nm cross-section GaAs core buried into a polymer matrix bonded on a Si host substrate. The propagation loss at λ=1.55 μm is measured as about 5 dB/mm for both…

Electronics Letters, 2006, 42 (4), pp.217-219. ⟨10.1049/el:20063869⟩. ⟨hal-00130860⟩