Publications
Affichage de 13001 à 13010 sur 16064
Sizing of structures by laser ultrasonics using air-solid interface waves
Frédéric Jenot, Marc Duquennoy, Mohammadi Ouaftouh, Mohamed Ourak
2005, pp.305-312. ⟨hal-00140394⟩
Voltage tuneable terahertz emission from a ballistic nanometer InGaAs/InAlAs transistor
J. Lusakowski, N. Dyakonova, L. Varani, J. Mateos, T. Parenty, A. Cappy, V. Popov, M.S. Shur
Journal of Applied Physics, 2005, 97 (6), pp.064307. ⟨10.1063/1.1861140⟩. ⟨hal-00330467⟩
InP and InAsP channel HEMT for millimeter wave applications
D. Theron, F Medjdoub, M. Zaknoune, X. Wallart, Christophe Gaquière
Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2005, 2005, Miami, FL, United States. ⟨hal-00126470⟩
InP HEMT downscaling for power applications at W band
F Medjdoub, M. Zaknoune, X. Wallart, Christophe Gaquière, F. Dessenne, Jean-Luc Thobel, D. Theron
IEEE Transactions on Electron Devices, 2005, 52, pp.2136-2143. ⟨hal-00126460⟩
Formation of nano-domains in SAMs of long chain alkyltrichlorosilanes deposited on silicon
S. Desbief, L. Patrone, D. Goguenheim, D. Vuillaume
8th European Conference on Molecular Electronics, ECME8, 2005, Bologna, Italy. ⟨hal-00125600⟩
A theoretical study of the influence of the electric and polarization distribution on ferroelectric thin films switching properties
Laurent Baudry
Proceedings of the 17th International Symposium on Integrated Ferroelectrics, ISIF 2005, 2005, Shanghai, China. ⟨hal-00131333⟩
Transport électronique dans une molécule : une nouvelle diode
D. Vuillaume, C. Delerue
Images de la physique 2005, Spécial Année mondiale de la physique, Editions du CNRS, Paris, France, pp.186-191, 2005. ⟨hal-00131700⟩
Fabrication and characterization of 100-nm In0.53Ga0.47As-In0.52Al0.48As double-gate HEMTs with two separate gate controls
Nicolas Wichmann, I. Duszynski, X. Wallart, S. Bollaert, A. Cappy
IEEE Electron Device Letters, 2005, 26, pp.601-603. ⟨hal-00154894⟩