Publications

• Article dans une revue

Package-free infrared micro sensor using polysilicon thermopile

Mohamed Boutchich, Katir Ziouche, M. Ait-Hammouda Yala, Pascale Godts, Didier Leclercq

In this paper, a new IR thermal micro sensor using an original design and silicon micro technology is presented. The operating principle of the sensor is based on the Seebeck effect. A high thermoelectric power thermopile has been developed using thermoelectric properties of phosphorus and boron…

Sensors and Actuators A: Physical , 2005, 121 (1), pp.52-58. ⟨10.1016/j.sna.2005.01.016⟩. ⟨hal-00125621⟩

• Article dans une revue

Characterization of InP semiconductor waveguides coupled to disk microcavity optical resonators via opto-microwave technique

Patrice Miska, Maxime Beaugeois, C. Lethien, Arnaud Beaurain, Hongwu Li, Jean-Pierre Vilcot, Didier Decoster, Jean Chazelas, Mohamed Bouazaoui, L. Dobrzynski, Abdellatif Akjouj, Bahram Djafari-Rouhani, Jerome O. Vasseur

We report on the opto-microwave characterization of InP waveguide-coupled to microcavity disk resonators. The lateral waveguide confinement is obtained by deep inductively-coupled plasma reactive-ion etching (ICP-RIE) through the guiding layer. We demonstrate the propagation of microwaves on an…

Microwave and Optical Technology Letters, 2005, 45 (4), pp.315-317. ⟨10.1002/mop.20808⟩. ⟨hal-03302278⟩

• Article dans une revue

Characterization of InP semiconductor waveguides coupled to disk microcavity optical resonators via opto-microwave technique

P. Miska, M. Beaugeois, C. Lethien, A. Beaurain, H.-W. Li, J.-P. Vilcot, D. Decoster, J. Chazelas, M. Bouazaoui, Leonard Dobrzynski, Abdellatif Akjouj, B. Djafari-Rouhani, J.-O. Vasseur

Microwave and Optical Technology Letters, 2005, 45 (4), pp.315-317. ⟨10.1002/mop.20808⟩. ⟨hal-04070917⟩

• Communication dans un congrès

The origin of the cycle by Sadi Carnot and Volta's battery

Raffaele Pisano

AIF Workshop Science & Teaching, 19th May, AIF Latina & ITG Sani Latina, May 2005, Latina, Italy. ⟨hal-04518911⟩

• Communication dans un congrès

Technological development of THz microfluidic microsystems for biological spectroscopy

Vianney Mille, Nour Eddine Bourzgui, F Medjdoub, L. Desplanque, Jean-Francois Lampin, Philippe Supiot, Bertrand Bocquet

We investigate a possible fabrication of microfluidic MEMS dedicated to the THz spectroscopy in a mixing technology based on silicon substrate coated with a thick layer of polymer. This layer is useful for the microfluidic circulation and the electromagnetic propagation. We use an original…

Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, Sep 2004, Karlsruhe, Germany. pp.549-550, ⟨10.1109/ICIMW.2004.1422207⟩. ⟨hal-00162775⟩

• Brevet

Sources d'électronébulisation planaires sur le modèle d'une plume de calligraphie et leur fabrication

S. Arscott, S. Le Gac, C. Druon, C. Rolando

N° de brevet: FR2862006 (A1). 2005. ⟨hal-00372435⟩

• Article dans une revue

A polysilicon nanoelectrospray–mass spectrometry source based on a microfluidic capillary slot

S. Arscott

Sensors and Actuators B: Chemical, 2005, 106 (2), pp.741-749. ⟨10.1016/j.snb.2004.09.026⟩. ⟨hal-02347664⟩

• Pré-publication, Document de travail

Tunnel current in self-assembled monolayers of 3-mercaptopropyltrimethoxysilane

Dinesh K. Aswal, Stéphane Lenfant, David Guérin, Jatinder V. Yakhmi, Dominique Vuillaume

The current density-voltage (J-V) characteristics of self assembled monolayers of 3-mercaptopropyltrimethoxysilane (MPTMS) chemisorbed on the native oxide surface of p+-doped Si demonstrate the excellent tunnel dielectric behavior of organic monolayers down to 3 carbon atoms. The J-V…

2005. ⟨hal-00004829⟩

• Article dans une revue

Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs

Z. Bougrioua, M. Azize, A. Jimenez, A.-F. Braña, P. Lorenzini, B. Beaumont, E. Munoz, P. Gibart

Highly resistive GaN (>1E+8 Ω#) is grown by MOVPE on sapphire with dislocation density in the range 1E+8 to 8E+8 /cm², using Fe modulation doping. High mobility 2DEGs are created at AlGaN/GaN:Fe interface for moderate Al composition: 2200 cm²/V/s at n_s∼7.6E+12 /cm². Good DC and RF small signal…

Physica Status Solidi C: Current Topics in Solid State Physics, 2005, 2 (7), pp.2424-2428. ⟨10.1002/pssc.200461588⟩. ⟨hal-02906540⟩

• Article dans une revue

Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(111) and GaN templates

Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.-P. Faurie

In this work, AlGaN/GaN high electron mobility transistors have been grown by ammonia source molecular beam epitaxy (MBE) on silicon (1 1 1), silicon carbide and GaN templates on sapphire. The structural and electrical properties of these layers have been studied in order to determine the impact of…

Journal of Crystal Growth, 2005, 278 (1-4), pp.383-386. ⟨10.1016/j.jcrysgro.2005.01.037⟩. ⟨hal-02906611⟩