Publications

Affichage de 13821 à 13830 sur 16056


  • COMM

As–P interface-sensitive GaInP/GaAs structures grown in a production MBE system

S. Dhellemmes, S. Godey, A. Wilk, X. Wallart, F. Mollot

Proceedings of the 13th International Conference on Molecular Beam Epitaxy, MBE XIII, 2004, Edinburgh, Scotland, United Kingdom. ⟨hal-00142073⟩

  • ART

Characterization and fabrication of InGaAsP/InP deep-etched micro-waveguides

Arnaud Beaurain, Samuel Dupont, Hongwu Li, Jean-Pierre Vilcot, Christiane Legrand, Joseph Harari, Monique Constant, Didier Decoster

InGaAsP/InP micro-waveguides are fabricated by a deep (>3 μm) Reactive Ion Etching. The devices losses are measured by the Fabry–Perot technique for guide width contained between 10 μm and 0.5 μm. The measured losses range from 2 dB/mm to 14 dB/mm.

Microwave and Optical Technology Letters, 2004, 40 (3), pp.216-218. ⟨10.1002/mop.11333⟩. ⟨hal-00141171⟩

  • COMM

Multimode underwater transducers

R.E. Newnham, D.C. Markley, R.J. Meyer, W.J. Hughes, Anne-Christine Hladky, J. Cochran

A series of small, low-cost, underwater and biomedical transducers were developed based on extrusion technology. Miniature versions of the high-power, low-frequency transducers were optimized to produce broadband transmit and receive response, engineered vibration modes, and acoustic beam patterns…

Symposium on Ceramic Materials and Multilayer Electronic Devices, Apr 2003, Nashville, TN, United States. pp.427-443. ⟨hal-00133853⟩

  • ART

Design optimization of AlInAs-GaInAs HEMTs for high frequency applications

J. Mateos, T. Gonzales, D. Pardo, S. Bollaert, T. Parenty, A. Cappy

IEEE Transactions on Electron Devices, 2004, 51, pp.521-528. ⟨hal-00133866⟩

  • COMM

Simulation Monte Carlo de la dynamique électronique dans les dispositifs optoélectroniques à transitions inter-sous-bandes

Jean-Luc Thobel, Olivier Bonno, François Dessenne

9èmes Journées de la Matière Condensée, JMC9, 2004, Nancy, France. ⟨hal-00133959⟩

  • COMM

Strong picosecond ultrasonic responses of semiconductors probed close to interband transitions

R. Cote, Arnaud Devos

2004, pp.2741-2744. ⟨hal-00133845⟩

  • COMM

Thermal de-embedding procedure for cryogenic on-wafer high frequency noise measurement

S. Delcourt, Gilles Dambrine, Nour Eddine Bourzgui, Francois Danneville, C. Laporte, J.P. Fraysse, M. Maignan

2004, pp.414-421. ⟨hal-00133897⟩

  • COMM

Noise modeling and performance of SOI MOSFETs

Francois Danneville, G. Pailloncy, B. Iniguez, J.P. Raskin, Gilles Dambrine

IEEE MTT-S International Microwave Symposium, Workshop on High Frequency Noise in Advanced Silicon-based Devices : From Basics to State-of-the-Art Device and Circuit Performances, 2004, Fort Worth, TX, United States. ⟨hal-00133912⟩