Publications

• COMM

Low frequency noise and transport mechanisms in AlGaN/GaN HEMT devices

Jean-Guy Tartarin, Geoffroy Soubercaze-Pun, Abdelali Rennane, Laurent Bary, Robert Plana, Jean-Claude de Jaeger, Marie Germain, S. Delage, Jacques Graffeuil

European Microwave Week, 2004, Amsterdam, Netherlands. ⟨hal-00141963⟩

• ART

Schottky-barrier source/drain MOSFETs on ultra-thin silicon-on-insulator body with a tungsten metallic midgap gate

G. Larrieu, Emmanuel Dubois

This letter presents a simple low-temperature process to fabricate Schottky-barrier (SB) MOSFETs that integrates a midgap metallic gate (tungsten). The device architecture is based on a thin (10 nm) and lowly doped silicon-on-insulator film that provides a threshold voltage of -0.3 V independent on…

IEEE Electron Device Letters, 2004, 25, pp.801-803. ⟨10.1109/LED.2004.838053⟩. ⟨hal-00140981⟩

• ART

Two-photon absorption in InP substrates in the 1.55 µm range

D. Vignaud, Jean-Francois Lampin, F. Mollot

Applied Physics Letters, 2004, 85, pp.239. ⟨hal-00018568⟩

• COMM

Systems conception and adaptative calibration technique for S-parameters measurement at 35 GHz

Kamel Haddadi, M. Maazi, D. Glay, T. Lasri

2004, pp.Session 4A. ⟨hal-00142280⟩

• COMM

Transmission on indoor power lines : from a stochastic channel model to the optimization and performances evaluation of multicarrier systems

Virginie Degardin, M. Lienard, Pierre Degauque

COST 286 Meeting, 2004, Liège, Belgium. ⟨hal-00142018⟩

• COMM

Dual antenna array systems in tunnels : propagation channel properties

M. Lienard, Pierre Degauque

IEEE International Symposium on Antennas and Propagation, 2004, Monterey, CA, United States. ⟨hal-00142020⟩

• COMM

Acoustic wave propagation in functionally graded material (FGM) cylinders

L. Elmaimouni, Jean-Etienne Lefebvre, Tadeusz Gryba, V. Zhang

2004, pp.1199-1200. ⟨hal-00142049⟩

• COMM

Radiation of directional seismic sources within a layered half-space

Madjid Berraki, Bertrand Dubus, Axelle Baroni

Congrès Français d'Acoustique CFA, Mar 2004, Strasbourg, France. pp.145-146. ⟨hal-00142047⟩

• COMM

Modélisation des pertes de propagation par rayonnement dans un matériau - Application à la caractérisation micro-onde

D. Glay, T. Lasri

2004, pp.Session 9. ⟨hal-00142052⟩

• COMM

Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement

Jean-Claude Jacquet, Raphaël Aubry, H. Gerard, E. Delos, Nathalie Rolland, Yvon Cordier, A. Bussutil, Michel Rousseau, Sylvain Laurent Delage

GaN and its related alloys constitute a family of wide bandgap semiconductors suitable to optoelectronics and power microwave applications. For the latter applications, their high breakdown fields in the 3MV/cm range and their high peak electron velocity above 107cm/s are crucial. The high electron…

12th European Gallium Arsenide and other compound semiconductors application symposium, Oct 2004, Amsterdam, Netherlands. pp.235-238. ⟨hal-00142308⟩