Publications

• COMM

PZT vector sensor

R. Newnham, D. Markley, R. Meyer, Anne-Christine Hladky, J. Cochran

2004 US Navy Workshop on Acoustic Transduction Materials and Devices, 2004, State College, PA, United States. ⟨hal-00133869⟩

• COMM

Monolithic multimode transducers prototyped using extrusion and fused deposition of ceramic (FDC) techniques

D.C. Markley, R.E. Newnham, Anne-Christine Hladky, J. Cochran, R.J. Meyer, A. Safari, M. Allahverdi

2004 IEEE International Ultrasonics, Ferroelectrics, and Frequency Control Joint 50th Anniversary Conference, 2004, Montreal, Canada. ⟨hal-00133861⟩

• COMM

A non uniform thermal de-embedding approach for cryogenic on-wafer high frequency noise measurements

S. Delcourt, Gilles Dambrine, Nour Eddine Bourzgui, Sylvie Lepilliet, C. Laporte, J.P. Fraysse, M. Maignan

2004, pp.1809-1812. ⟨hal-00133882⟩

• ART

Strong oscillations detected by picosecond ultrasonics in silicon : evidence for an electronic structure effect

Arnaud Devos, R. Cote

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 70, pp.125208-1-6. ⟨hal-00133851⟩

• ART

Materials for high performance cymbal transducer

A. Dogan, E. Uzgur, R.J. Meyer, Anne-Christine Hladky, R.E. Newnham

Journal of Electroceramics, 2004, 13, pp.403-408. ⟨hal-00133852⟩

• ART

Sign reversal and tunable rectification in a ballistic nanojunction

B. Hackens, L. Gence, C. Gustin, X. Wallart, S. Bollaert, A. Cappy, V. Bayot

Applied Physics Letters, 2004, 85, pp.4508-4510. ⟨hal-00133885⟩

• COMM

TP de nanotechnologie : réalisation et observation de nanofils de silicium à l'aide de l'AFM

Bernard Legrand, H. Happy

8èmes Journées Pédagogiques du CNFM, 2004, Saint Malo, France. ⟨hal-00133919⟩

• COMM

RF and noise properties of SOI MOSFETs, including the influence of a direct tunneling gate current

Francois Danneville, G. Pailloncy, Gilles Dambrine, B. Iniguez

2004, pp.103-110. ⟨hal-00154886⟩

• ART

Hot carrier aging degradation phenomena in GaN based MESFETs

F. Rampazzo, G. Pierobon, D. Pacetta, Christophe Gaquière, D. Theron, B. Boudart, G. Meneghesso, E. Zanoni

Microelectronics Reliability, 2004, 44, pp.1375-1380. ⟨hal-00154890⟩

• COMM

LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide. Application to HEMT's devices

Marie-Antoinette Di Forte-Poisson, M. Magis, Maurice Tordjman, Raphaël Aubry, Nicolas Sarazin, M. Peschang, Erwan Morvan, Sylvain Laurent Delage, J. Di Persio, Raymond Quéré, B. Grimbert, Virginie Hoel, E. Delos, Damien Ducatteau, Christophe Gaquière

This paper reports on the LP-MOCVD growth optimisation of GaAlN/GaN heterostructures grown on Silicon Carbide substrates for HEMT applications, and on the first device performances obtained with these structures. The critical impact of some growth parameters on the physical properties of the GaAlN/…

The Twelfth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XII), May 2004, Lahina, United States. pp.107-112, ⟨10.1557/PROC-798-Y10.26⟩. ⟨hal-00162796⟩