Publications

• OTHER

Etude de fonctions passives à base de nanostructures photoniques

Arnaud Beaurain

2003. ⟨hal-00146472⟩

• ART

PMNT films for integrated capacitors

E. Fribourg-Blanc, Eric Cattan, Denis Remiens, E. Defaÿ

Solid-State Electronics, 2003, 47, pp.1631-1635. ⟨hal-00146475⟩

• COMM

Nouvel applicateur planaire pour thermothérapie microonde

Julien Carlier, V. Thomy, J.C. Camart, Luc Dubois, J. Pribetich

13èmes Journées Nationales Microondes, JNM 2003, 2003, Lille, France. pp.122-124. ⟨hal-00146067⟩

• OTHER

Imagerie et détection ultrasonores par corrélation

B. El Khaldi

2003. ⟨hal-00162743⟩

• ART

Wave-mechanical calculations of leakage current through stacked dielectrics for nanotransistor Metal-Oxide-Semiconductor design

M. Le Roy, Eric Lheurette, O. Vanbésien, D. Lippens

Journal of Applied Physics, 2003, 93, pp.2966-2971. ⟨hal-00146086⟩

• ART

Formation of Pt-based silicide contacts : kinetics, stochiometry and current drive capabilities

Guilhem Larrieu, Emmanuel Dubois, X. Wallart, Xavier Baie, J. Katcki

A detailed analysis of the formation of Pt2Si and PtSi silicides is proposed, based on x-ray photoelectron spectroscopy ~XPS!, transmission electron microscopy ~TEM!, and electrical characterizations. Published kinetics of the Pt2Si and PtSi transformations under ultrahigh vacuum condition are…

Journal of Applied Physics, 2003, 94 (12), pp.7801-7810. ⟨10.1063/1.1605817⟩. ⟨hal-00146394⟩

• ART

Grazing incidence diffraction anomalous fine structure of self-assembled semiconductor nanostructures

S. Grenier, A. Letoublon, M.G. Proeitti, Hubert Renevier, L. Gonzalez, J.M. Garcia, C. Priester, J. Garcia

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2003, 200, pp.24-33. ⟨hal-00146613⟩

• ART

Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs

Yvon Cordier, P. Lorenzini, Jean Michel Chauveau, D. Ferré, Ydir Androussi, J. Di Persio, Dominique Vignaud, Jean-Louis Codron

In this work, we investigate the influence of the growth temperature and the arsenic flux on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs with inverse step based InAlAs buffer layers. We show besides the temperature, how the composition modulations make the arsenic flux a critical…

Journal of Crystal Growth, 2003, 251, pp.822. ⟨10.1016/S0022-0248(02)02316-3⟩. ⟨hal-00018494⟩

• ART

Terahertz frequency generation : electronic and photonic approach

D. Lippens

La Revue de l'électricité et de l'électronique, 2003, 1, pp.25-31. ⟨hal-00162726⟩

• COMM

Low-frequency drain noise in AlGaN/GaN HEMTs on Si substrate

N. Malbert, N. Labat, A. Curutchet, A. Touboul, Christophe Gaquière, A. Minko

2003, pp.342-349. ⟨hal-00162738⟩