Publications

• Communication dans un congrès

Validation d'un modèle non linéaire pour MOSFET au moyen des mesures grand signal

A. Siligaris, Gilles Dambrine, D. Schreurs, Francois Danneville

2003, pp.6A-4. ⟨hal-00146013⟩

• Communication dans un congrès

Quantum calculation of leakage current in stacked gate dielectrics for nano-MOS structures

Eric Lheurette, M. Le Roy, O. Vanbésien, D. Lippens

Proceedings of the 14th Workshop on Modelling and Simulation of Electron Devices, 2003, Barcelona, Spain. ⟨hal-00146102⟩

• Communication dans un congrès

Nonlinear electron transport in InGaAs/InAlaS ballistic devices

Benoit Hackens, L. Gence, Sébastien Faniel, Cédric Gustin, Hervé Boutry, Lukasz Bednarz, Isabelle Huynen, Vincent Bayot, X. Wallart, A. Cappy, Javier Mateos, Tomás González

Trends in NanoTechnology, TNT 2003, Sep 2003, Salamanca, Spain. ⟨hal-00146041⟩

• Communication dans un congrès

Non-linear phenomenological model for RF advanced MOSFET

A. Siligaris, Gilles Dambrine, Sylvie Lepilliet, D. Schreurs, Francois Danneville

European IC-CAP User Meeting, 2003, Prague, Czech Republic. ⟨hal-00146016⟩

• Autre publication scientifique

Caractérisation électro-opique de composants térahertz par échantillonnage Franz-Keldysh subpicoseconde

L. Desplanque

2003. ⟨hal-00146113⟩

• Article dans une revue

Experimental and theoretical investigation of the GaInAs surface reactivity to phosphorus

X. Wallart, C. Priester

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68, pp.235314/1-10. ⟨hal-00146112⟩

• Communication dans un congrès

Influence of growth conditions on the structural, optical and electrical quality of MBE grown InAlAs/InGaAs metamorphic HEMTs on GaAs

Yvon Cordier, P. Lorenzini, Jean Michel Chauveau, D. Ferré, Ydir Androussi, J. Dipersio, Dominique Vignaud, Jean-Louis Codron

InAlAs/InGaAs metamorphic HEMTs on GaAs have demonstrated low noise figures and high output powers with obvious advantages over structures grown on InP substrates. Indeed, from a processing viewpoint, the GaAs substrate is less brittle, less expensive, available in size up to 6 inches in diameter…

International Conference on Molecular Bean Epitaxy, Sep 2002, San Francisco, CA, United States. pp.822-826, ⟨10.1109/MBE.2002.1037764⟩. ⟨hal-00146110⟩

• Communication dans un congrès

Optimisation and modelling of pentacene-based organic thin film on high-k gate dielectrics

K. Lmimouni, M. Berliocchi, C. Dufour, Denis Remiens, D. Vuillaume, G. Velu, C. Legrand

7th European Conference on Molecular Electronics, ECME 2003, 2003, Avignon, France. ⟨hal-00146178⟩

• Communication dans un congrès

Self-assembled molecular rectifying diodes on silicon : synthesis, experimental and theoretical charge transport studies

Stéphane Lenfant, Dominique Vuillaume, Christophe Krzeminski, Guy Allan, Christophe Delerue, F. Tran Van, C. Chevrot

7th European Conference on Molecular Electronics, ECME 2003, Sep 2003, Avignon, France. ⟨hal-00146179⟩

• Communication dans un congrès

2½ D microfabricated nib-like sources for nanoelectrospray applications

S. Le Gac, S. Arscott, C. Rolando

2003, pp.1211-1214. ⟨hal-00146442⟩