Publications

• Communication dans un congrès

Modélisation d'Interconnexions Cuivre Submicroniques VLSI en Présence des Niveaux Environnants à Pertes

K. El Bouazzatti, Jean-François Legier, Erick Paleczny, Christophe Seguinot, Denis Deschacht

13èmes Journées Nationales Microondes, May 2003, Lille, France. ⟨lirmm-00269550⟩

• Communication dans un congrès

A low complexity suboptimal MIMO receiver : the combined ZF-MLD algorithm

V. Pammer, Yves Delignon, Wadih Sawaya, David Boulinguez

Recently, wireless technologies have known an increasing success, thus becoming an interesting field for study. One of the topics of research are multiple antenna arrays. Signal recovery in that case is not obvious. Different methods with different performances have been suggested. From a…

4th IEEE Proceedings on Personal, Indoor and Mobile Radio Communications, PIMRC 2003., Sep 2003, Beijing, China. pp.2271-2275, ⟨10.1109/PIMRC.2003.1259122⟩. ⟨hal-00162727⟩

• Article dans une revue

T-ray generation by photomixing : performance and prospects, Génération aux fréquences térahertz par photomélange : performances et perspectives

Gaël Mouret, Sophie Matton, Pascal Masselin, Robin Bocquet, Emilien Peytavit, S. Arscott, Jean-Francois Lampin, F. Mollot, D. Lippens

La Revue de l'électricité et de l'électronique, 2003, 1, pp.32-36. ⟨hal-00162723⟩

• Article dans une revue

Reactive ion beam etching of PZT thin films

Caroline Soyer, Eric Cattan, Denis Remiens

Lead titano-zirconate ferroelectric thin films have developed a great interest for their applications in memory devices, and more recently in microelectromechanical systems because of their interesting piezoelectric properties. The patterning has become an essential element for PZT integration in…

Ferroelectrics, 2003, 288 (1), pp.253-263. ⟨10.1080/00150190390211530⟩. ⟨hal-00146478⟩

• Article dans une revue

A new empirical nonlinear model for sub-250 nm channel MOSFET

Alexandre Siligaris, Gilles Dambrine, Dominique Schreurs, Francois Danneville

An empirical nonlinear model for sub-250 nm channel length MOSFET is presented which is useful for large signal RF circuit simulation. Our model is made of both analytical drain current and gate charge formulations. The drain current expression is continuous and infinitely derivable, and charge…

IEEE Microwave and Wireless Components Letters, 2003, 13 (10), pp.449-451. ⟨10.1109/LMWC.2003.815687⟩. ⟨hal-00145981⟩

• Article dans une revue

The metal/organic monolayer interface in molecular electronic devices

S. Lenfant, D. Vuillaume

Microelectronic Engineering, 2003, 70, pp.539-550. ⟨hal-00146158⟩

• Communication dans un congrès

Self-assembled molecular rectifying diodes

S. Lenfant, D. Vuillaume, Christophe Krzeminski, C. Delerue

Materials Research Society Spring Meeting, 2003, San Francisco, CA, United States. ⟨hal-00146173⟩

• Communication dans un congrès

Characterization of MIS tunnel junctions by IETS

G. Salace, C. Petit, D. Vuillaume

203rd Meeting of the Electrochemical Society, 2003, Paris, France. ⟨hal-00146170⟩

• Article dans une revue

Phase conjugation of second acoustic harmonic and retrofocusing in nonlinear inhomogeneous medium

Vladimir Preobrazhensky, Philippe Pernod

Physics of Wave Phenomena, 2003, 11, pp.63-67. ⟨hal-00146136⟩

• Communication dans un congrès

Transmission electron microscopy of iridium silicide contacts for advanced MOSFET structures with Schottky source and drain

A. Laszcz, J. Katcki, J. Ratajczak, G. Larrieu, Emmanuel Dubois, X. Wallart

European Materials Research Society Fall Meeting, 2003, Warsaw, Poland. ⟨hal-00146424⟩