Publications

• Article dans une revue

Long dephasing time and high temperature ballistic transport in an InGaAs quantum dot

Benoit Hackens, Sébastien Faniel, François Delfosse, Cédric Gustin, Hervé Boutry, Isabelle Huynen, X. Wallart, S. Bollaert, A. Cappy

We report on measurements of the magnetoconductance of an open circular InGaAs quantum dot between 1.3 and 204 K. We observe two types of magnetoconductance 5uctuations: universal conductance 5uctuations (UCFs), and “focusing” 5uctuations related to ballistic trajectories between openings. The…

Physica E: Low-dimensional Systems and Nanostructures, 2003, 17, pp.143-146. ⟨10.1016/S1386-9477(02)00713-0⟩. ⟨hal-00145986⟩

• Article dans une revue

Grazing incidence diffraction anomalous fine structure of self-assembled semiconductor nanostructures

S. Grenier, A. Letoublon, M.G. Proeitti, Hubert Renevier, L. Gonzalez, J.M. Garcia, C. Priester, J. Garcia

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2003, 200, pp.24-33. ⟨hal-00146613⟩

• Article dans une revue

Wave-mechanical calculations of leakage current through stacked dielectrics for nanotransistor Metal-Oxide-Semiconductor design

M. Le Roy, Eric Lheurette, O. Vanbésien, D. Lippens

Journal of Applied Physics, 2003, 93, pp.2966-2971. ⟨hal-00146086⟩

• Article dans une revue

Lead Zirconate Titanate (PZT) Films Deposited by a Hydrothermal Method

Sébastien Euphrasie, Sylvie Daviero-Minaud, Philippe Pernod

Solid State Sciences, 2003, 5 (11-12), pp.1499-1504. ⟨hal-00258427⟩

• Article dans une revue

Accurate modelling of large angle tilt (LATID) and pure vertical implantations : application to the simulation of n- and p-LDMOS backgates

Evelyne Lampin, Emmanuel Dubois, H. Xu, S. Bardy, F. Murray

The lateral and vertical extensions of the backgate of complementary laterally diffused metal oxide semiconductor (LDMOS) are simulated. The importance of channeling for a large-angle tilt implantation and a purely vertical (0°) implantation are studied with the atomistic simulator Crystal-TRIM.…

IEEE Transactions on Electron Devices, 2003, 50 (5), pp.1401-1404. ⟨10.1109/TED.2003.813464⟩. ⟨hal-00146392⟩

• Article dans une revue

Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs

Yvon Cordier, P. Lorenzini, Jean Michel Chauveau, D. Ferré, Ydir Androussi, J. Di Persio, Dominique Vignaud, Jean-Louis Codron

In this work, we investigate the influence of the growth temperature and the arsenic flux on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs with inverse step based InAlAs buffer layers. We show besides the temperature, how the composition modulations make the arsenic flux a critical…

Journal of Crystal Growth, 2003, 251, pp.822. ⟨10.1016/S0022-0248(02)02316-3⟩. ⟨hal-00018494⟩

• Communication dans un congrès

Antennes planes bi-couches imprimées sur quartz. Considérations technologiques et performances à 60 GHz

Philippe Coquet, Ronan Sauleau, Hervé Lhermite, J.P. Daniel, T. Matsui

Treizièmes Journées Nationales Micro-ondes, May 2003, Lille, France. 4 p. ⟨hal-00553237⟩

• Article dans une revue

Terahertz frequency generation : electronic and photonic approach

D. Lippens

La Revue de l'électricité et de l'électronique, 2003, 1, pp.25-31. ⟨hal-00162726⟩

• Communication dans un congrès

New Schottky source/drain architectures

Emmanuel Dubois

Workshop Micro et Nanoélectronique, 2003, Crolles, France. ⟨hal-00146417⟩

• Article dans une revue

Wide and narrow-band bandpass coplanar filters in the W-frequency band

Eric Rius, Gaëtan Prigent, H. Happy, Gilles Dambrine, Samuel Boret, A. Cappy

This paper deals with the design of passive coplanar devices in the W-frequency band. As long as coplanar transmission lines are correctly dimensioned, analytical models based on quasi-TEM approximation can be used. Such models are associated with a correct definition of the reference planes at the…

IEEE Transactions on Microwave Theory and Techniques, 2003, 51 (3), pp.784-791. ⟨10.1109/TMTT.2003.808586⟩. ⟨hal-00145985⟩