Publications

• Autre publication scientifique

Transport électronique dans l'ADN

T. Heim

2002. ⟨hal-00148694⟩

• Communication dans un congrès

Large signal behaviour of gallium nitride based HEMT's devices

Christophe Gaquière, Raphaël Aubry, Yannick Guhel, A. Minko, Nicolas Vellas, Matthieu Werquin, B. Boudart, Simone Cassette, Yvon Cordier, Sylvain Laurent Delage, E. Delos, Jean-Claude de Jaeger, Damien Ducatteau, H. Gerard

25th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2002, 2002, Chermogolovska, Russia. ⟨hal-00149730⟩

• Communication dans un congrès

Influence of the hole injection layer in thienylene phenylene light emitting diodes

K. Lmimouni, M. Berliocchi, C. Dufour, D. Vuillaume, F. Tran Van, J. Grazulevicius, C. Chevrot, J.P. Lere-Porte, S. Wakim

INF Meeting, 2002, Bari, Italy. ⟨hal-00148713⟩

• Article dans une revue

Influence of the microstructure and of an ION beam etching on the domain propagation in PZT thin films

Brice Gautier, Caroline Soyer, Eric Cattan, Denis Remiens, Jean-Claude Labrune

PbZrTiO 3 (PZT) thin films have been grown by RF-magnetron sputtering and sputter etched by Argon ion beam. The topography of the bombarded material is studied by Atomic Force Microscope (AFM), several ferroelectric domains are created by applying a sufficiently high voltage between the tip of the…

Integrated Ferroelectrics, 2002, 50 (1), pp.231-240. ⟨10.1080/10584580215530⟩. ⟨hal-00149627⟩

• Article dans une revue

Reactive ion beam etching effects on maskless PZT properties

Caroline Soyer, Eric Cattan, Denis Remiens

Ion beam etching of sputtered Pb(Zr 0.54 ,Ti 0.46 )O 3 has been performed using pure Ar gas. The etch rate and selectivity ratios between PZT and masks as a function of the process parameters (current density, acceleration voltage, gas pressure) has been investigated. We have evaluated the PZT…

Integrated Ferroelectrics, 2002, 48, pp.221-229. ⟨10.1080/10584580215465⟩. ⟨hal-00149624⟩

• Article dans une revue

Why do (2x4) GaAs and InAs (001) surfaces exposed to phosphorus have so different strain behavior ?

Xavier Wallart, Catherine Priester, D. Deresmes, Thomas Gehin, Francis Mollot

Applied Physics Letters, 2002, 81, pp.1060-1062. ⟨hal-00018491⟩

• Article dans une revue

Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density

D. Vignaud, Jean-Francois Lampin, E. Lefebvre, M. Zaknoune, F. Mollot

Applied Physics Letters, 2002, 80, pp.4151. ⟨hal-00018489⟩

• Autre publication scientifique

Conception et réalisation d'un amplificateur faible bruit à 2,4 GHz en technologie CMOS fortement submicronique

E. Fall

2002. ⟨hal-00162704⟩

• Communication dans un congrès

Etude et réalisation de transducteurs millimétriques

Anne-Christine Hladky, S. Alkoy, D.C. Markley, R.J. Meyer, W.J. Hughes, J. Cochran, R.E. Newnham

2002, pp.256-259. ⟨hal-00147778⟩

• Communication dans un congrès

Numerical modeling of the ultrasonic cavitation field and experimental evaluation of the bubble density

Bertrand Dubus, C. Granger, P. Mosbah, A. Moussatov, H. Schmit, L. Sztor, C. Campos-Pozuelo

Forum Acusticum 2002, 2002, Sevilla, Spain. ⟨hal-00147788⟩