Publications
Affichage de 15461 à 15470 sur 16175
3-Dimensional process simulation of thermal annealing of low dose implanted dopants in silicon
V. Senez, J. Herbaux, T. Hoffmann, E. Lampin
IEICE Transactions on Electronics, 2000, E83-C, pp.1267-1274. ⟨hal-00158495⟩
Electroluminescence of metamorphic Inx Al1-xAs/InxGa1-xAs HEMTs on GaAs substrate
N. Cavassilas, F. Aniel, A. Nojeh, R. Adde, M. Zaknoune, S. Bollaert, Y. Cordier, D. Theron, A. Cappy
2000, 10 pp. ⟨hal-00159003⟩
Issues in high frequency noise simulation for deep submicron MOSFET's
J.S. Goo, C.H. Choi, Francois Danneville, Z. Yu, T. Lee, R. Dutton
2000, pp.401-406. ⟨hal-00157897⟩
Improved Monte Carlo algorithm for the simulation of delta-doped AlInAs/GaInAs HEMTs
J. Mateos-Lopez, T. Gonzalez, D. Pardo, Virginie Hoel, H. Happy, A. Cappy
IEEE Transactions on Electron Devices, 2000, 47, pp.250-253. ⟨hal-00157880⟩
Numerical modelling, experimental investigations, stress control for flat glass tempering
Dominique Lochegnies
Challenges and Breakthrough Technologies, 2000, Amsterdam, Netherlands. ⟨hal-00159082⟩
Excitonic and quasiparticle gaps on Si nanocrystals
Christophe Delerue, Michel Lannoo, Guy Allan
Physical Review Letters, 2000, 84, pp.2457-2460. ⟨10.1103/PhysRevLett.84.2457⟩. ⟨hal-00158640⟩
Réalisation technologique de transistors à effet de champ dans les filières InP et GaN pour amplification de puissance hyperfréquence
S. Trassaert
2000. ⟨hal-00158975⟩
Formation de nano-domaines dans les mono-couches mixtes d'alkysilanes sur silicium
Laurent Breuil
2000. ⟨hal-00158471⟩
Silicon nitride passivation on GaN MESFET's
Christophe Gaquière, B. Boudart, R. Amokrane, Y. Guhel, Y. Crosnier, Jean-Claude de Jaeger, F. Omnes
2000, pp.VIII-11, VIII-12. ⟨hal-00159001⟩
Experimental evaluation of new thermal inversion approach in correlation microwave thermometry
S. Bri, L. Bellarbi, M. Habibi, M. Elkadiri, A. Mamouni
Electronics Letters, 2000, 36, pp.439-440. ⟨hal-00158129⟩