Publications

• Communication dans un congrès

Les matériaux métamorphiques : une voie pour l'intégration de composants pour applications millimétriques sur substrat d'arséniure de gallium

Y. Cordier, A. Cappy, M. Zaknoune, S. Bollaert

Journée Thématique sur l'Electronique Intégrée, 2000, Arcueil, France. ⟨hal-00158447⟩

• Article dans une revue

Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating films

J. Collet, O. Tharaud, A. Chapoton, D. Vuillaume

Applied Physics Letters, 2000, 76, pp.1941-1943. ⟨hal-00158477⟩

• Communication dans un congrès

New regulated voltage down converter based on modified bandgap cell

Edith Kussener, Herve Barthelemy, A. Robers, A. Malherbe, A. Kaiser

2000, pp.19-21. ⟨hal-00158509⟩

• Article dans une revue

An analog beam-forming circuit for ultrasound imaging using switched-current delay lines

Bruno Stefanelli, I. O'Connor, L. Quiquerez, Andreas Kaiser, D. Billet

IEEE Journal of Solid-State Circuits, 2000, 35, pp.202-211. ⟨hal-00158512⟩

• Article dans une revue

Quantum confinement energies in zinc-blende III-V and diamond IV semiconductors

Guy Allan, Yann-Michel Niquet, Christophe Delerue

Blueshift of the band gap due to quantum confinement is calculated in a tight-binding model for a series of nine III–V zinc-blende AB (A=Al, Ga, or In, B=As, P, or Sb) and two diamond group-IV (Si and Ge) semiconductor clusters. Analytic expressions for the highest occupied molecular orbital and…

Applied Physics Letters, 2000, 77, pp.639-641. ⟨10.1063/1.127070⟩. ⟨hal-00158665⟩

• Article dans une revue

Atomic-scale study of GaMnAs/GaAs

B. Grandidier, J.P. Nys, C. Delerue, D. Stievenard, Y. Higo, M. Tanaka

Applied Physics Letters, 2000, 77, pp.4001-4003. ⟨hal-00158645⟩

• Article dans une revue

Method for tight-binding parametrization : application to silicon nanostructures

Yann-Michel Niquet, Christophe Delerue, Guy Allan, Michel Lannoo

We propose a method for tight-binding parametrization, designed to give accurate results in the calculation of confined edge states in semiconductor nanostructures of any size. Indeed, this improved tight-binding description accurately reproduces the bulk effective masses as well as the overall…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2000, 62, pp.5109-5116. ⟨10.1103/PhysRevB.62.5109⟩. ⟨hal-00158664⟩

• Article dans une revue

Microscopic characterization of defects using scanning tunneling microscopy

D. Stievenard

Materials Science and Engineering: B, 2000, B71, pp.120-127. ⟨hal-00158667⟩

• Article dans une revue

Thermally detected optical absorption, reflectance and photoreflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy

Pierre Disseix, C. Payen, Joël Leymarie, Aime Vasson, F. Mollot

Journal of Applied Physics, 2000, 88, pp.4612-4618. ⟨hal-00158440⟩

• Article dans une revue

Raman characterization of GaN synthetised by N implantation in GaAs substrate

B. Boudart, J.C. Pesant, Jean-Claude de Jaeger, P.A. Dhamelincourt

Journal of Raman Spectroscopy, 2000, 31, pp.615-618. ⟨hal-00158978⟩