Publications

• Communication dans un congrès

Underground tunnels detection and location by high resolution seismic reflection

Bogdan Piwakowski, C. Leonard

5th International Symposium on Non-Destructive Testing in Civil Engineering, NDT-CE 2000, 2000, Japan. pp.415-425. ⟨hal-00250442⟩

• Communication dans un congrès

Positioning emergency calls along roads and motorways using a GSM dedicated cellular radio network

M. Laoufi, M. Heddebaut, M. Cuvelier, J. Rioult, Jean-Michel Rouvaen

52nd IEEE Vehicular Technology Conference, VTC Fall 2000, 2000, United States. pp.2039-2046. ⟨hal-00250453⟩

• Communication dans un congrès

Emissivity and its influence on quantitative retrieval of temperature in microwave radiometry mammography (MRM)

Bertrand Bocquet, J.C. van de Velde, Roger Ringot, E. Constant

Progress in Electromagnetics Research Symposium, PIERS 2000, Jul 2000, Cambridge, MA, United States. ⟨hal-00158178⟩

• Article dans une revue

Interplay between segregation, roughness and local strains in the growth of Ga0.75In0.25P alloy

X. Wallart, C. Priester, D. Deresmes, F. Mollot

Applied Physics Letters, 2000, 77, pp.253-255. ⟨hal-00158232⟩

• Communication dans un congrès

10 GHz load-pull measurements for a 0,3 µm-N-HIGFET

M. Touirat, M. Roger, E. Delos, L. Nuyen, Y. Crosnier, G. Salmer

2000, pp.VI-7, VI-8. ⟨hal-00157874⟩

• Communication dans un congrès

Frequency difference generation in the terahertz region using LTG-GaAs photodetector

Emilien Peytavit, Gaël Mouret, Jean-Francois Lampin, Pascal Masselin, P. Mounaix, F. Mollot, D. Lippens

We demonstrated Terahertz generation by optical frequency difference with a continuous tuning between 0.2 1 micro W and 3 THz 1 nW. To this aim, high speed photodetectors with an interdigited photoconductor scheme on a submicron scale, loaded by THz log-periodic antennas, were deposited on a 1…

8th International Conference on Terahertz Electronics, Sep 2000, Darmstadt, Germany. pp.45-48. ⟨hal-00158220⟩

• Communication dans un congrès

Charge control and electron transport properties in InyAl1-yAs/InxGa1-xAs metamorphic HEMTs : effect of indium content

Y. Cordier, M. Zaknoune, S. Bollaert, A. Cappy

2000, pp.102-105. ⟨hal-00158437⟩

• Communication dans un congrès

Conduction band offset at the (AIxGa1-x)yIn1-y/Ga0.52In0.48P interface : a photoluminescence study

D. Vignaud, F. Mollot

Proceedings of the 11th International Conference on Molecular Beam Epitaxy, MBE XI, 2000, Beijing, China. ⟨hal-00158221⟩

• Autre publication scientifique

Modélisation et simulation multidimensionnelle des contraintes mécaniques en technologies silicium avancées

T. Hoffmann

2000. ⟨hal-00158490⟩

• Article dans une revue

Polyimid resist as infrared absorbing layer for radiation microsensors

K. Ziouche, P. Godts, D. Leclercq

Sensors and Materials, 2000, 12, pp.445-454. ⟨hal-00158488⟩