Publications

• Article dans une revue

Quantum confinement in germanium nanocrystals

Yann-Michel Niquet, Guy Allan, Christophe Delerue, Michel Lannoo

The electronic structure of Ge nanocrystals is studied using a sp3 tight binding description. Analytical laws for the confinement energies, valid over the whole range of sizes, are derived. We validate our results with ab initio calculations in the local density approximation for smaller clusters.…

Applied Physics Letters, 2000, 77, pp.1182-1184. ⟨10.1063/1.1289659⟩. ⟨hal-00158666⟩

• Autre publication scientifique

Nouvelles architectures de sources stables programmables en gamme millimétrique et centimétrique

G. Lewandowski

2000. ⟨hal-00158127⟩

• Communication dans un congrès

Impact of inductance on timing characteristics of VLSI interconnects

Gregory Servel, Fabrice Huret, Erick Paleczny, P. Kennis, Denis Deschacht

2000, pp.C17/1-6. ⟨hal-00158602⟩

• Communication dans un congrès

Signal to noise ratio enhancement using heterojunction bipolar phototransistor by base current compensation

Samuel Dupont, M. Fendler, F. Jorge, Sophie Maricot, Jean-Pierre Vilcot, Didier Decoster

2000, pp.59-61. ⟨hal-00158601⟩

• Communication dans un congrès

Fast photodetection

Jean-Pierre Vilcot, Joseph Harari, M. Fendler, V. Magnin, Samuel Dupont, Didier Decoster

3rd European Microwave Week, Workshop on Microwave Optoelectronics, 2000, Paris, France. ⟨hal-00158617⟩

• Communication dans un congrès

HEMT structures on GaAs or InP substrates for millimeter wave power amplification

Didier Theron, Yvon Cordier, X. Wallart, S. Bollaert, Mohammed Zaknoune, Mustafa Boudrissa, Bertrand Bonte, Christophe Gaquière, Francis Mollot, A. Cappy, R. Fauquembergue, Jean-Claude de Jaeger

24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE'2000, May 2000, Aegean Sea, Greece. ⟨hal-00159030⟩

• Communication dans un congrès

On 2D/3D numerical oxidation modeling : calibration and investigation of silicon crystal orientation effect on stresses in shallow trench isolations

T. Hoffmann, K.F. Dombrowski, V. Senez

2000, pp.59-62. ⟨hal-00158513⟩

• Communication dans un congrès

Charge control and electron transport properties in InAlAs/InGaAs metamorphic HEMT's : effect of indium content

Y. Cordier, M. Zaknoune, S. Bollaert, A. Cappy

2000, pp.102-105. ⟨hal-00159005⟩

• Communication dans un congrès

AlGaInP barrier layer grown by gas source molecular beam epitaxy for V-band AlGaInP/InGaAs/GaAs power pseudomorphic HEMT

M. Zaknoune, O. Schuler, X. Wallart, S. Piotrowicz, F. Mollot, D. Theron, Y. Crosnier

2000, pp.353-356. ⟨hal-00159004⟩

• Article dans une revue

A silicon shadow mask for deposition on isolated areas

A. Tixier, Y. Mita, J.P. Gouy, H. Fujita

Journal of Micromechanics and Microengineering, 2000, 10, pp.157-162. ⟨hal-00158497⟩