Publications

• ART

Absence of carrier separation in ambipolar charge and spin drift in p + -GaAs

Fabian Cadiz, D. Paget, A. Rowe, L. Martinelli, S. Arscott

Applied Physics Letters, 2015, 107 (16), pp.162101. ⟨10.1063/1.4933189⟩. ⟨hal-02345561⟩

• COMM

Polymer thin film deposition using atmospheric pressure single plasma jet or plasma jet array from a Plasma Gun device

Céline Vivien, Eric Robert, Jean-Michel Pouvesle

Plasma Enhanced Chemical Vapour Deposition (PECVD) processes have been used for decades for surface processing in a wide range of industrial applications like semiconductor films, low-k films, barrier diffusion. Thin film deposition is especially of high interest for biomedical applications for the…

Polymer thin film deposition using atmospheric pressure single plasma jet or plasma jet array from a Plasma Gun device . AVS 62nd International Symposium, AVS, Oct 2015, San José, United States. ⟨hal-01258297⟩

• ART

Thermoelectric energy conversion: How good can silicon be?

Maciej Haras, Valeria Lacatena, François Morini, J.F. Robillard, Stephane Monfray, Thomas Skotnicki, Emmanuel Dubois

Lack of materials which are thermoelectrically efficient and economically attractive is a challenge in thermoelectricity. Silicon could be a good thermoelectric material offering CMOS compatibility, harmlessness and cost reduction but it features a too high thermal conductivity. High harvested…

Materials Letters, 2015, 157, pp.193-196. ⟨10.1016/j.matlet.2015.05.012⟩. ⟨hal-03325003v2⟩

• ART

Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs

V. Talbo, J. Mateos, T González, Y. Lechaux, Nicolas Wichmann, S. Bollaert, V Vasallo

Impact-ionization metal-oxide-semiconductor FETs (I-MOSFETs) are in competition with tunnel FETs (TFETs) in order to achieve the best behaviour for low power logic circuits. Concretely, III-V I-MOSFETs are being explored as promising devices due to the proper reliability, since the impact…

Journal of Physics: Conference Series, 2015, 647, pp.012056. ⟨10.1088/1742-6596/647/1/012056⟩. ⟨hal-02115673⟩

• ART

Improvement of interfacial and electrical properties of Al2O 3 / n-Ga0.47 In0.53 As for III-V impact ionization MOSFETs

Y. Lechaux, A. Fadjie, S. Bollaert, V. Talbo, J. Mateos, T González, V Vasallo, Nicolas Wichmann

In this work, Metal - Oxide - Semiconductor Capacitors (MOSCaps) based on Al2O3/ n-Ga0.47In0.53As interface have been studied. In order to have high MOSFETs performance, it is necessary to improve the semiconductor - oxide interface quality. It is observed that the (NH4)2S passivation shows lower…

Journal of Physics: Conference Series, 2015, 647, pp.012062. ⟨10.1088/1742-6596/647/1/012062⟩. ⟨hal-02115664⟩

• ART

Experimental analysis of UWB signal performance in a constrained environment for railway application

Ouafae Cohin, Sara Iben Jellal, Fouzia Boukour, S. Baranowski

In the railway application, in order to establish the communication between wagons, some technologies are proposed such as the ZigBee and HTN (Hybrid Networking Technology). However, these techniques have some limitations such as: the low data rate, non-secured transmission and interferences. The…

Wireless Engineering and Technology, 2015, 6 (4), pp. 79-86. ⟨hal-03586928⟩

• COMM

NPSAN intégrant des commutateurs moléculaires optiquement stimulables

Yannick Viero, Louis Thomas, David Guérin, Guillaume Copie, Christophe Krzeminski, Fabrizio Cleri, Dominique Vuillaume, Stéphane Lenfant, Ioana Dobra, Philippe Blanchard, Jean Roncali, Mohammed Ikbal, Shlomo Yitzchaik

Science et Technologie des systèmes Pi-Conjugués (SPIC), Oct 2015, Angers, France. ⟨hal-02920652⟩

• COMM

Negative differential resistance and non-volatile memory in hybrid redox organic/nanoparticle devices

Tianchen Zhang, David Guérin, Stéphane Lenfant, Dominique Vuillaume, F. Alibart, Kamal Lmimouni, Ali Yassin, Maiténa Oçafrain, Jean Roncali, Philippe Blanchard

Science et Technologie des systèmes Pi-Conjugués (SPIC), Oct 2015, Angers, France. ⟨hal-02920664⟩

• ART

Lamb wave acousto-optic modulator in ZnO/MgO multiple quantum wells and comparison with classical modulator

Tadeusz Gryba, Jean-Etienne Lefebvre, L. Elmaimouni, F.E. Ratolojanahary

An analysis of a ZnO/MgO multiple quantum well (MQW) acousto-optic modulator with Lamb waves is performed. With the MQW thickness in the range of 0.2 times the Lamb wavelength, the only observed Lamb modes are the lowest-order symmetric S0 and antisymmetric A0 modes. These modes induce strain and…

Applied optics, 2015, 54 (29), pp.8786-8794. ⟨10.1364/AO.54.008786⟩. ⟨hal-03245239⟩

• THESE

Investigation of micro and nano structured materials for acoustic band gaps engineering in electro-acoustic devices, Etude et développement de matériaux micro/nano structurés pour l’ingénierie des bandes interdites dans les dispositifs électro-acoustiques à ondes de surface

Yu Du

This work concerns the study of micro/nano structured materials for the engineering of band structures in the field of elastic waves. We were interested in particular to the integration of these materials in electro-acoustic devices and the study of the interaction with the surface acoustic waves.…, Ce travail porte sur l’étude de matériaux micro/nano structurés permettant l’ingénierie des structures de bande dans le domaine des ondes élastiques. Nous nous sommes intéressés en particulier à l’intégration de ces matériaux dans les dispositifs électro-acoustiques et l’étude de l’interaction avec…

Micro and nanotechnologies/Microelectronics. Ecole Centrale de Lille, 2015. English. ⟨NNT : 2015ECLI0020⟩. ⟨tel-01284060⟩