Publicaciones

• Communication dans un congrès

65 nm SOI CMOS 60 GHz passive mixer for six-port technology

Kamel Haddadi, Christophe Loyez

This work describes the design and measurements of a 60 GHz passive mixer for six-port applications operating and implemented in a 65nm SOI CMOS technology. The mixer topology, consisting only of a n-MOS cold-FET and CPW transmission line matching networks, avoids the use of coupler in front of the...

IEEE Topical Conference on Wireless Sensors and Sensor Networks, WiSNet 2016, Jan 2016, Austin, TX, United States. pp.52-55, ⟨10.1109/WISNET.2016.7444320⟩. ⟨hal-03224660⟩

• Article dans une revue

Theoretical investigation of the phonon-limited carrier mobility in (001) Si films

Jing Li, Evelyne Lampin, Christophe Delerue, Yann-Michel Niquet

We calculate the phonon-limited carrier mobility in (001) Si films with a fully atomistic framework based on a tight-binding (TB) model for the electronic structure, a valence-force-field model for the phonons, and the Boltzmann transport equation. This framework reproduces the electron and phonon...

Journal of Applied Physics, 2016, 120 (17), pp.174301. ⟨10.1063/1.4966616⟩. ⟨cea-01849845⟩

• Communication dans un congrès

Development of a patch antenna based on a Polyaniline/Carbon coated Cobalt composite

Z. Hamouda, J.-L. Wojkiewicz, A.A. Pud, Lamine Kone, C. Hamouda, S. Bergheul, T. Lasri

In this study, a patch antenna including a thick film made of a composite material based on Polyaniline (PANI) and Carbon coated Cobalt (CCo) is investigated. Conception, simulation, realization and characterization steps are presented. The morphology of the obtained composite was studied via...

10th European Conference on Antennas and Propagation, EuCAP 2016, Apr 2016, Davos, Switzerland. pp.7481557, ⟨10.1109/EuCAP.2016.7481557⟩. ⟨hal-03538361⟩

• Communication dans un congrès

Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs

Hector Sanchez-Martin, Oscar Garcia-Perez, Ignacio Íñiguez-De-La-Torre, Susana Perez, Tomás González, Javier Mateos, Philippe Altuntas, N. Defrance, Marie Lesecq, Virginie Hoel, Yvon Cordier, Stephanie Rennesson

The performance of GaN transistors is still limited by physical and fabrication problems, mainly related to different kinds of traps. In this work, virgin transistors reveals strong low frequency dispersion both in the transconductance and output conductance, that we attribute to the presence of...

11th European Microwave Integrated Circuits Conference (EuMIC), Oct 2016, London, United Kingdom. paper EuMIC10-03, 153-156, ⟨10.1109/EuMIC.2016.7777513⟩. ⟨hal-03270103⟩

• Communication dans un congrès

A Digital Delay Line with Coarse/Fine tuning through Gate/Body biasing in 28nm FDSOI

Ilias Sourikopoulos, Antoine Frappé, Andreia Cathelin, Laurent Clavier, Andreas Kaiser

This paper discusses the design and characterization of a programmable digital delay line. The core of the proposed architecture is a thyristor-type delay element featuring the capability for coarse/fine tuning without using any additional hardware. This is made possible by taking advantage of body...

46th European Solid-State Device Research Conference (ESSDERC) / 42nd European Solid-State Circuits Conference (ESSCIRC), Sep 2016, Lausanne, Switzerland. pp.145-148, ⟨10.1109/ESSCIRC.2016.7598263⟩. ⟨hal-03270099⟩

• Communication dans un congrès

Deep Trench Isolation and Through Silicon Via Wetting Characterization by High-Frequency Acoustic Reflectometry

Christophe Virgilio, Lucile Broussous, Philippe Garnier, Julien Carlier, Pierre Campistron, V. Thomy, Malika Toubal, Pascal Besson, Laurence Gabette, Bertrand Nongaillard

Wetting efficiency of microstructures or nanostructures patterned on Si wafers is a real concern in integrated circuits manufacturing. We present here a high-frequency acoustic method which enables the local determination of the wetting state of a liquid on real DTI and TSV structures. Partial...

13th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), Sep 2016, Knokke, Belgium. ⟨10.4028/www.scientific.net/SSP.255.129⟩. ⟨hal-03280231⟩

• Communication dans un congrès

Contact resistance study of “edge-contacted” metal-graphene interfaces

V. Passi, A. Gahoi, J. Ruhkopf, S. Kataria, Francois Vaurette, E. Pallecchi, H. Happy, M. C. Lemme

The contact resistance RC of "edge-contacted" metal-graphene interfaces is systematically studied. Our experiments demonstrate a reduction of contact resistance by intentional patterning of graphene to create "edge contacts". The parameter space for different hole patterns in...

46th European Solid-State Device Conference, ESSDERC 2016, Sep 2016, Lausanne, Switzerland. pp.236-239, ⟨10.1109/ESSDERC.2016.7599629⟩. ⟨hal-03335829⟩

• Article dans une revue

A Configurable Transmitter Architecture for IEEE 802.11ac and 802.11ad Standards

Fikre Tsigabu Gebreyohannes, Antoine Frappé, Andreas Kaiser

IEEE Transactions on Circuits and Systems II: Express Briefs, 2016, 63 (1), pp.9-13. ⟨10.1109/TCSII.2015.2468920⟩. ⟨hal-03377045⟩

• Article dans une revue

Electronic structure investigation of Al0.7Ga0.3As/GaAs nanometric heterostructures by Kelvin force microscopy

Sylvain Pouch, Francois Triozon, Nicolas Chevalier, Thierry Melin, Yann Michel Niquet, Lukasz Borowik

Kelvin force microscopy provides a spatially resolved measurement of the surface potential, which is related to the energetic band structure of a material. The goal of this work is to investigate the surface potential on Al0.7Ga0.3As and GaAs heterostructures with a decreasing layer thickness up to...

RSC Advances, 2016, 6 (8), pp.6782-6787. ⟨10.1039/c5ra24505b⟩. ⟨cea-01851572⟩

• Communication dans un congrès

Coherent & tunable THz source

R. Paquet, S. Blin, M. Myara, L. Le Gratiet, M. Sellahi, B. Chomet, P. Latzel, Guillaume Ducournau, Jean-Francois Lampin, G. Beaudoin, I. Sagnes, A. Garnache

Meeting GDR NanoTeramir, 2016, Paris, France. ⟨hal-01919731⟩