Publications

• Communication dans un congrès

Polarization engineering of AlGaN/GaN HEMTs for high power applications at 40 GHz

Stéphanie Rennesson, François Lecourt, N. Defrance, M. Chmielowska, S. Chenot, Marie Lesecq, Virginie Hoel, Etienne Okada, Yvon Cordier, Jean-Claude de Jaeger

Joint 5th International Workshop on Silicon Carbide Hetero-Epitaxy and 5th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications, HeteroSiC-WASMPE 2013, 2013, Nice, France. ⟨hal-00987957⟩

• Communication dans un congrès

A 142GHz fully integrated wireless chip to chip communication system for high data rate operation

S. Foulon, S. Pruvost, D. Pache, Christophe Loyez, N. Rolland

A 142GHz fully-integrated wireless chip-to-chip solution is demonstrated for short range and low power communication. Implemented in 0.13μm SiGe:C BiCMOS technology, the Tx and Rx silicon area including dipole antennas is 0.31mm². The OOK transceiver achieves a data rate of 14Gbps for a…

39th European Solid-State Circuits Conference, ESSCIRC 2013, 2013, Bucharest, Romania. session A4L-C, paper 1254, 77-80, ⟨10.1109/ESSCIRC.2013.6649076⟩. ⟨hal-00927405⟩

• Article dans une revue

First reliability demonstration of sub-200 nm AlN/GaN-on-silicon double heterostructure HEMTs for Ka band applications

G. Meneghesso, M. Meneghini, F Medjdoub, Y. Tagro, B. Grimbert, D. Ducatteau, N. Rolland, R. Silvestri, E. Zanoni

IEEE Transactions on Device and Materials Reliability, 2013, 13, pp.480-488. ⟨10.1109/TDMR.2013.2276425⟩. ⟨hal-00913577⟩

• Communication dans un congrès

Approach-to-equilibrium molecular dynamics to study thermal transport

Evelyne Lampin, Pier Luca Palla, Pierre-Arnaud Francioso, Fabrizio Cleri

We study thermal transport properties by conduction using molecular dynamics simulations. In our approach, two portions are delimited and heated at two different temperatures before the approach-to-equilibrium in the whole structure is monitored. The observed decay of the temperature difference is…

Materials Research Society Fall Meeting, MRS Fall 2013, Symposium UU : Phonon-Interaction-Based Materials Design - Theory, Experiments and Applications, 2013, Boston, MA, United States. ⟨hal-00944024⟩

• Article dans une revue

Psyco-Education Factors of Applying Visualisation in Science Education [Ph.D Thesis Review]

Raffaele Pisano

Advances in Historical Studies, 2013, 02 (01), pp.17-18. ⟨10.4236/ahs.2013.21005⟩. ⟨hal-04509504⟩

• Communication dans un congrès

Nanostructured silicon based superomniphobic surfaces

T.P.N. Nguyen, Rabah Boukherroub, V. Thomy, Yannick Coffinier

5ème Assemblée Générale du GdR Nanofils Semiconducteurs, 2013, Saint-Martin-de-Londres, France. ⟨hal-00823984⟩

• Communication dans un congrès

KPFM sur des transistors FET à base de nano-rubans de silicium fonctionnalisés pour la réalisation de détecteurs

S. Lenfant, K. Smaali, David Guérin, Thierry Melin, D. Vuillaume, L. Ordronneau, A. Carella, C. Celle, J.P. Simonato

16ème Forum des Microscopies à Sondes Locales, 2013, Spa, Belgique. papier OC26, 48-49. ⟨hal-00818716⟩

• Article dans une revue

Interfacial X-ray photospectrometry study of In0.53Ga0.47As under different passivation treatments for metal oxide semiconductor field effect transistor devices

M.F. Mohd Razip Wee, Arash Dehzangi, Nicolas Wichmann, S. Bollaert, Burhanuddin Yeop Majlis

Micro and Nano Letters, 2013, 8, pp.836-840. ⟨10.1049/mnl.2013.0560⟩. ⟨hal-00909847⟩

• Communication dans un congrès

Impact of the deposition process on the elastic properties of thin films measured by ultrafast acoustics

Arnaud Devos, A. Le Louarn, P. Emery

IEEE International Ultrasonics Symposium, IUS 2013, 2013, Prague, Czech Republic. ⟨hal-00944053⟩

• Article dans une revue

High performance AlGaN metal-semiconductor-metal ultraviolet photo detectors

Sabah Benzeghda, Farida Hobar, Didier Decoster

In this paper, we present Al0.25Ga0.75N ultraviolet Schottky barrier photodetectors on Al2O3, that wasmodeled using The two-dimensional device simulator Silvaco and ATLAS. It was found that the device has verylow dark current, with the applied bias below 1 V, the dark current was below 16 pA and…

International Journal of Engineering Sciences and Research Technology, 2013, 2, pp.3333-3336. ⟨hal-00911234⟩