Publications

Affichage de 7261 à 7270 sur 16099


  • Communication dans un congrès

High frequency noise characterisation of graphene FET Device

D. Mele, S. Fregonese, Sylvie Lepilliet, E. Pichonat, Gilles Dambrine, H. Happy

RF GFET devices have been processed on SiC wafer using Al2O3 as a gate oxide. These devices have been characterised with DC, S parameter and high frequency noise measurement (NF50). The noise parameters have been extracted in order to evaluate the graphene material for RF applications. This GFET…

61st IEEE MTT-S International Microwave Symposium, IMS 2013, 2013, Seattle, WA, United States. paper TU3C-1, 4 p., ⟨10.1109/MWSYM.2013.6697561⟩. ⟨hal-00944030⟩

  • Communication dans un congrès

Doped semiconductor nanocrystal junctions studied by Kelvin probe and non-contact atomic force microscopy

Lukasz Borowik, Thuat Nguyen-Tran, D. Deresmes, Heinrich Diesinger, Pere Roca I Cabarrocas, Thierry Melin

Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (ND~10^20-10^21 cm-3) hydrogen-passivated silicon nanocrystals (NCs) in the 2-50nm size range, using non-contact atomic force microscopy coupled to Kelvin probe…

Materials Research Society Fall Meeting, MRS Fall 2013, Symposium LL : Advances in Scanning Probe Microscopy, 2013, Boston, MA, United States. ⟨hal-00944018⟩

  • Communication dans un congrès

A 285 GHz sub-harmonic injection locked oscillator in 65nm CMOS technology

J. Moron Guerra, A. Siligaris, Jean-Francois Lampin, Francois Danneville, P. Vincent

A 285 GHz Sub Harmonic Injection Locked Oscillator (SHILO) is presented using a standard 65nm CMOS process. The architecture of this oscillator is based on the differential LC tank with push-push but adapted to obtain a third harmonic oscillation. The output power is -19 dBm at 285 GHz for a dc…

61st IEEE MTT-S International Microwave Symposium, IMS 2013, 2013, Seattle, WA, United States. paper WE1F-4, 3 p., ⟨10.1109/MWSYM.2013.6697345⟩. ⟨hal-00944033⟩

  • Communication dans un congrès

Tunable locally resonant band gaps for surface acoustic waves and Lamb waves in a phononic crystal

N. Gasmi, Abdelkrim Talbi, Y. Du, M. Goueygou, Olivier Bou Matar

IEEE International Ultrasonics Symposium, IUS 2013, 2013, Prague, Czech Republic. ⟨hal-00944043⟩

  • Communication dans un congrès

Déphaseurs millimétriques microrubans en technologie ultrasouple

S. Hage-Ali, Y. Orlic, Nicolas Tiercelin, Philippe Pernod, Vladimir Preobrazhensky, P. Coquet

18èmes Journées Nationales Microondes, JNM 2013, May 2013, Paris, France. papier J3-TM-P7, 2 p. ⟨hal-00878394⟩

  • Article dans une revue

Nanometal plasmon polaritons

Abdellatif Akjouj, Gaëtan Lévêque, Sabine Szunerits, Yan Pennec, Bahram Djafari-Rouhani, Rabah Boukherroub, L. Dobrzynski

A nanometal is a nanometric metallic structure. A plasmon is a collective excitation of an electron gas. A plasmon polariton is a plasmon coupled to an electromagnetic wave. Whereas plasmons in bulk metal do not couple to light fields, a thin metal film can sustain surface polaritons when excited…

Surface Science Reports, 2013, 68, pp.1-67. ⟨10.1016/j.surfrep.2012.10.001⟩. ⟨hal-00796412⟩

  • Communication dans un congrès

[Invited] SOI technologies for high-performance flexible electronics

Emmanuel Dubois

Joint 7th International Workshop ''Functional Nanomaterials and Devices'' and 2nd Ukrainian-French Seminar ''Semiconductor-on-insulator materials, devices and circuits : physics, technology & diagnostic'', 2013, Kyiv, Ukraine. ⟨hal-00819468⟩

  • Article dans une revue

Design and performance of an insect-inspired nano air vehicle

A. Bontemps, T. Vanneste, J.B. Paquet, T. Dietsch, Sébastien Grondel, Eric Cattan

Smart Materials and Structures, 2013, 22, pp.014008-1-13. ⟨10.1088/0964-1726/22/1/014008⟩. ⟨hal-00796466⟩