Publications

• COMM

Deterministic placement of doping atoms on hydroxylated surfaces

L. Mathey, L. Veyre, H. Fontaine, V. Enyedi, K. Yckache, J. Guerrero, N. Chevalier, F. Martin, J.P. Barnes, F. Bertin, C. Durand, Maxime Berthe, B. Grandidier, C. Thieuleux, C. Coperet

An improved approach of semi-conductor doping by Molecular Layer Deposition (MLD) is investigated. Here, dopant-containing molecules are directly grafted onto silica-coated silicon wafers and optimized ligands can provide more effective dopant drive-in annealing. The grafting approach is validated…

International Conference on Solid State Devices and Materials, SSDM 2013, 2013, Fukuoka, Japan. ⟨10.7567/SSDM.2013.B-3-2⟩. ⟨hal-00956279⟩

• ART

The Faraday threshold in small cylinders and the sidewall non-ideality

William R. Batson, Farzam Zoueshtiagh, Raviprasad Narayanan

In this work we investigate, by way of experiments and theory, the Faraday instability threshold in cylinders at low frequencies. This implies large wavelengths where effects from mode discretization cannot be ignored. Careful selection of the working fluids has resulted in an immiscible interface…

Journal of Fluid Mechanics, 2013, 729, pp.496-523. ⟨10.1017/jfm.2013.324⟩. ⟨hal-00871919⟩

• COMM

Fonctionnalisation de germanium par des couches minces organiques pour sa passivation et son isolation électrique

L. Fillaud, X. Lefevre, S. Smaali, S. Lenfant, D. Vuillaume, Serge Palacin, Bruno Jousselme

Matériaux et Nanostructures π-Conjugués, MNPC 13, 2013, Annecy, France. ⟨hal-00878941⟩

• ART

Delay time calculation for dual-wavelength quantum cascade lasers

A. Hamadou, S. Lamari, Jean-Luc Thobel

Journal of Applied Physics, 2013, 114, 203102, 7 p. ⟨10.1063/1.4829914⟩. ⟨hal-00912357⟩

• ART

Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays

N. Clement, X.L. Han, Guilhem Larrieu

Low-frequency noise is used to study the electronic transport in arrays of 14 nm gate length vertical silicon nanowire devices. We demonstrate that, even at such scaling, the electrostatic control of the gate-all-around is sufficient in the sub-threshold voltage region to confine charges in the…

Applied Physics Letters, 2013, 103 (26), pp.263504. ⟨10.1063/1.4858955⟩. ⟨hal-00922923⟩

• ART

Evaluation of the surface bonding energy of an InP membrane bonded oxide-free to Si using instrumented nanoindentation

K. Pantzas, G. Patriarche, Éric Le Bourhis, David Troadec, A. Itawi, G. Beaudoin, I. Sagnes, A. Talneau

Applied Physics Letters, 2013, 103, pp.081901-1-4. ⟨10.1063/1.4817675⟩. ⟨hal-00872063⟩

• ART

Progressive multi-layer drop-casting of CdSe nanoparticles for photocurrent down shifing monitoring

Yannick Lambert, Di Zhou, Tao Xu, Odile Cristini, D. Deresmes, B. Grandidier, D. Stievenard

We investigated the spectroscopic photocurrent response of photovoltaic devices versus an increasing number of drop-casted CdSe nanoparticles onto planar and nanocones silicon p-i-n junctions. For all samples, a strong enhancement of the photocurrent in the UV range was detected as well as a…

Applied Physics Letters, 2013, 103 (5), pp.051102-1-4. ⟨10.1063/1.4816956⟩. ⟨hal-00871996⟩

• COMM

Caractérisation et étude du temps de transit des électrons dans une structure HEMT à hétérojonction InAlN/GaN

Alain Agboton

16èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2013, 2013, Grenoble, France. 4 p. ⟨hal-00957791⟩

• ART

Exploring electronic structure of one-atom thick polycrystalline graphene films : a nano angle resolved photoemission study

J. Avila, I. Razado, S. Lorcy, R. Fleurier, E. Pichonat, D. Vignaud, X. Wallart, M.C. Asensio

The ability to produce large, continuous and defect free films of graphene is presently a major challenge for multiple applications. Even though the scalability of graphene films is closely associated to a manifest polycrystalline character, only a few numbers of experiments have explored so far…

Scientific Reports, 2013, 3, pp.2439-1-8. ⟨10.1038/srep02439⟩. ⟨hal-00871897⟩

• ART

Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy

C. Rolland, P. Caroff, Christophe Coinon, X. Wallart, R. Leturcq

Applied Physics Letters, 2013, 102, pp.223105-1-4. ⟨10.1063/1.4809576⟩. ⟨hal-00871968⟩